Zero Bit-Error-Rate Weak PUF based on Spin-Transfer-Torque MRAM Memories

International audienc

Zero bit-error-rate weak PUF based on Spin-Transfer-Torque MRAM memories

International audiencePhysically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. While several solutions exist for classical CMOS devices, novel proposals have been recently presented which exploit emerging technologies like magnetic memories. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a promising choice for future PUFs due to the high variability affecting the electrical resistance of the Magnetic Tunnel Junction (MTJ) device in anti-parallel magnetization. Some papers showed that these devices could guarantee high levels of both unclonability and reliability. However, 100% reliability is not yet obtained in those proposals. In this paper we present an effective method to identify the unreliable cells in a PUF implementation. This information is then used to create a zero bit-error-rate PUF scheme

Zero Bit-Error-Rate Weak PUF based on Spin-Transfer-Torque MRAM Memories

International audienc

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within