105,214 research outputs found
State Banking: A Study in Dual Regulation
We introduce the MATLAB package YALMIP. The purpose of YALMIP is to support rapid definition and solution of LMI problems without the hazzle of learning the syntax in the solvers SP, SOCP and MAXDET
My Responsibilities as a Twentieth-Century American
Non-fiction by Tom Wille
Book review: diploma democracy: the rise of political meritocracy by Mark Bovens and Anchrit Wille
In Diploma Democracy: The Rise of Political Meritocracy, Mark Bovens and Anchrit Wille examine how Western democracies are shaped by educational inequalities that lead to gaps in political participation and governments being dominated by academic elites. While less sure of some of the authors’ solutions for these ‘diploma democracies’, this is a convincing account of the influence of education on political inequality in Western Europe today, writes Jameel Hampton. Diploma Democracy: The Rise of Political Meritocracy. Mark Bovens and Anchrit Wille. Oxford University Press. 2017
Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport
A theory of spin-polarized electron transport in ferromagnet-semiconductor
heterostructures, based on a unified semiclassical description of ballistic and
diffusive transport in semiconductors, is outlined. The aim is to provide a
framework for studying the interplay of spin relaxation and transport mechanism
in spintronic devices. Transport inside the (nondegenerate) semiconductor is
described in terms of a thermoballistic current, in which electrons move
ballistically in the electric field arising from internal and external
electrostatic potentials, and are thermalized at randomly distributed
equilibration points. Spin relaxation is allowed to take place during the
ballistic motion. For arbitrary potential profile and arbitrary values of the
momentum and spin relaxation lengths, an integral equation for a spin transport
function determining the spin polarization in the semiconductor is derived. For
field-driven transport in a homogeneous semiconductor, the integral equation
can be converted into a second-order differential equation that generalizes the
spin drift-diffusion equation. The spin-polarization in ferromagnet
semiconductor structures is obtained by matching the spin-resolved chemical
potentials at the interfaces, with allowance for spin-selective interface
resistances. Illustrative examples are considered.Comment: 11 pages, 4 figures; to appear in Materials Science and Engineering
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