A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

Architectures, Antennas and Circuits for Millimeter-wave Wireless Full-Duplex Applications

Demand for wireless network capacity keeps growing exponentially every year, as a result a 1000-fold increase in data traffic is projected over the next 10 years in the context of 5G wireless networks. Solutions for delivering the 1000-fold increase in capacity fall into three main categories: deploying smaller cells, allocating more spectrum and improving spectral efficiency of wireless systems. Smaller cells at RF frequencies (1-6GHz) are unlikely to deliver the demanded capacity increase. On the other hand, millimeter-wave spectrum (frequencies over 24GHz) offers wider, multi-GHz channel bandwidths, and therefore has gained significant research interest as one of the most promising solutions to address the data traffic demands of 5G. Another disruptive technology is full-duplex which breaks a century-old assumption in wireless communication, by simultaneous transmission and reception on the same frequency channel. In doing so, full-duplex offers many benefits for wireless networks, including an immediate spectral efficiency improvement in the physical layer. Although FD promises great benefits, self-interference from the transmitter to its own receiver poses a fundamental challenge. The self-interference can be more than a billion times stronger than the desired signal and must be suppressed below the receiver noise floor. In recent years, there has been some research efforts on fully-integrated full-duplex RF transceivers, but mm-wave fully-integrated full-duplex systems, are still in their infancy. This dissertation presents novel architectures, antenna and circuit techniques to merge two exciting technologies, mm-wave and full-duplex, which can potentially offer the dual benefits of wide bandwidths and improved spectral efficiency. To this end, two different antenna interfaces, namely a wideband reconfigurable T/R antenna pair with polarization-based antenna cancellation and an mm-wave fully-integrated magnetic-free non-reciprocal circulator, are presented. The polarization-based antenna cancellation is employed in conjunction with the RF and digital cancellation to design a 60GHz full-duplex 45nm SOI CMOS transceiver with nearly 80dB self-interference suppression. The concepts and prototypes presented in this dissertation have also profound implications for emerging applications such as vehicular radars, 5G small-cell base-stations and virtual reality

CMOS Front-End Circuits in 45-nm SOI Suitable for Modular Phased-Array 60-GHz Radios

Next Fifth-generation (5G) wireless technologies enabling ultra-wideband spectrum availability and increased system capacity can achieve multi-gigabit/s (Gbps) data rates suitable for ultra-high-speed internet access around the 60-GHz band (i.e., Wi-Gig Technology). This mm-wave band is unlicensed and experiences high propagation power losses. Therefore, it is suitable for short-range communications and requires antenna arrays to satisfy the link budget requirements. Half-duplex reconfigurable phased-array transceivers require wideband, low-cost, highly integrated front-end circuits such as bilateral RF switches, low-noise/power amplifiers, passive RF splitters/combiners, and phase shifters implemented in deep sub-micron CMOS. In this dissertation, analysis, design, and verification of essential CMOS front-end components are covered and fabricated in GlobalFoundries 45-nm RF-SOI CMOS technology. Firstly, a fully-differential, single-pole, single-throw (SPST) switch capable of high isolation in broadband CMOS transceivers is described. The SPST switch realizes better than 50-dB isolation (ISO) across DC to 43 GHz while maintaining an insertion loss (IL) below 3 dB. Measured RF input power for 1-dB compression (IP1dB) of the IL is +19.6 dBm, and the measured input third-order intercept point (IIP3) is +30.4 dBm (both assuming differential inputs at 20 GHz). The prototype has an active area of 0.0058 mm^2. Secondly, a single-pole double-throw (SPDT) switch is implemented using the SPST concept by using a balun to convert the shared differential path to a single-ended antenna port. The SPDT simulations predict less than 3.5-dB IL and greater than 40-dB ISO across 55 to 65 GHz frequency band. An IP1dB of +21 dBm is expected from large-signal simulations. The prototype has an active area of 0.117 mm^2. Thirdly, a fully-differential switched-LC topology adopted with slow-wave artificial transmission line concept, and phase inversion network is described for a 360-degree phase shift range with 11.25-degree phase resolution. The average IL of the complete phase shifter is 5.3 dB with less than 1-dB rms IL error. Furthermore, the IP1dB of the phase shifter is +16 dBm. The prototype has an active area of 0.245 mm^2. Lastly, a fully-differential, 2-stage, common-source (CS) low-noise amplifier (LNA) is developed with wideband matching from 57.8 GHz to 67 GHz, a maximum simulated forward power gain of 20.8 dB, and a minimum noise figure of 3.07 dB. The LNA consumes 21 mW and predicts an OP1dB of 4.8 dBm from the 1-V supply. The LNA consumes an active area of 0.028 mm^2

Analysis And Design Of Wideband Passive Mixer-First Receivers

This dissertation focuses on the design of wideband SAW-less receivers for softwaredefined radios. The entire body of work is based on a single RF front-end architecture type: a passive mixer connected directly to the antenna port of the radio, without an LNA or matching network up front. This structure is inherently wideband which allows for a single receiver front-end to operate at a wide range of frequencies, as tuned by its local oscillator (LO). Additionally, the mixer exhibits the property of transparency from the baseband port of the radio to the RF port of the radio, and vice versa. The focus of the first half of the thesis is on developing a simple theoretical framework for the impedance characteristics of the passive mixer, and implementing a maximally flexible receiver which utilizes the mixer's transparency to the fullest extent. Additionally, it is shown that mixing with 8 non-overlapping phases instead of the traditional 4 has benefits beyond harmonic rejection extending to improved noise performance and increased impedance tuning range. This receiver exhibits low noise figure (~3dB), excellent wideband linearity (IIP3[GREATER-THAN OR EQUAL TO]25dBm), and unprecedented RF impedance control from the baseband side of the passive mixer. Another wideband receiver is presented which explores increasing the number of LO phases even further to 16 and 32, increasing the impedance matching range. The same chip contains a circuit technique for alleviating the shunting effects of LO phase overlap on mixer conversion gain, noise, and impedance match range. Finally in a new design, the power consumption of the receiver architecture is decreased by a factor of 5x (and not scaling with RF frequency). This is done using a resonant LO drive with 8 non-overlapping phases, incorporating the large mixer gate capacitance directly into the LC tank of the VCO. Baseband power consumption is also reduced by reusing current in the four baseband amplifier channels, and performing harmonic rejection, all in one stage of amplification

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios