Resistive switching RAM devices based on amorphous oxide semiconductors for system on panel applications

This work reports the mask design, fabrication and characterization of memristor devices with diode like electrical behavior at pristine state. It is due to the presence of Schottky junctions between Zinc-tin-oxide (ZTO) and platinum - Indium-galliumzinc- oxide (IGZO) and molybdenum oxide for two different Metal-Insulator-Metal (MIM) configurations. The devices were exclusively produced using physical vapor deposition processes without intentional heating. Typical advanced electrical analysis of ReRAM device was performed. The Pt-ZTO-TiAu devices showed pinched hysteresis properties with large Ron=of f ratio, fast switching which can be controlled in a digital SET and analog RESET operation. However, large device-to-device variations and stability are the main issues which is due to the processing. On the other hand, the Mo-IGZO-Mo devices showed a small Ron=of f ratio and only analog operation. There was a high yield and stability. However, using DC sweep for cycling led to a charging phenomenon. Using SET/RESET pulses, the devices sustain hundreds of cycles without deterioration or movement of the resistance states, showing great resilience and retention

Memristors for the Curious Outsiders

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.Comment: Perpective paper for MDPI Technologies; 43 page

Who Will Be the Members of Society 5.0? Towards an Anthropology of Technologically Posthumanized Future Societies

The Government of Japan’s “Society 5.0” initiative aims to create a cyber-physical society in which (among other things) citizens’ daily lives will be enhanced through increasingly close collaboration with artificially intelligent systems. However, an apparent paradox lies at the heart of efforts to create a more “human-centered” society in which human beings will live alongside a proliferating array of increasingly autonomous social robots and embodied AI. This study seeks to investigate the presumed human-centeredness of Society 5.0 by comparing its makeup with that of earlier societies. By distinguishing “technological” and “non-technological” processes of posthumanization and applying a phenomenological anthropological model, this study demonstrates: (1) how the diverse types of human and non-human members expected to participate in Society 5.0 differ qualitatively from one another; (2) how the dynamics that will shape the membership of Society 5.0 can be conceptualized; and (3) how the anticipated membership of Society 5.0 differs from that of Societies 1.0 through 4.0. This study describes six categories of prospective human and non-human members of Society 5.0 and shows that all six have analogues in earlier societies, which suggests that social scientific analysis of past societies may shed unexpected light on the nature of Society 5.0