Review on suitable eDRAM configurations for next nano-metric electronics era

We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts, we explored different technological proposals and operational regimes where it can be located. The best memory cell performance is observed for the 3T1D-eDRAM cell when it is based on FinFET devices. Both device variability and SEU appear as key reliability issues for memory cells at sub-22nm technology node.Peer ReviewedPostprint (author's final draft

ポータビリティを意識したCMOSミックスドシグナルVLSI回路設計手法に関する研究

本研究は、半導体上に集積されたアナログ・ディジタル・メモリ回路から構成されるミクストシグナルシステムを別の製造プロセスへ移行することをポーティングとして定義し、効率的なポーティングを行うための設計方式と自動回路合成アルゴリズムを提案し、いくつかの典型的な回路に対する設計事例を示し、提案手法の妥当性を立証している。北九州市立大

Variation-Tolerant Non-Uniform 3D Cache Management in Memory Stacked Multi-Core Processors

Process variations in integrated circuits have significant impact on their performance, leakage and stability. This is particularly evident in large, regular and dense structures such as DRAMs. DRAMs are built using minimized transistors with presumably uniform speed in an organized array structure. Process variation can introduce latency disparity among different memory arrays. With the proliferation of 3D stacking technology, DRAMs become a favorable choice for stacking on top of a multi-core processor as a last level cache for large capacity, high bandwidth, and low power. Hence, variations in bank speed create a unique problem of non-uniform cache accesses in the 3D space.In this thesis, we investigate cache management techniques for tolerating process variation in a 3D DRAM stacked onto a multi-core processor. We modeled the process variation in a 4-layer DRAM memory to characterize the latency variations among different banks. As a result, the notion of fast and slow banks from the core's standpoint is no longer associated with their physical distances with the banks. They are determined by the different bank latencies due to process variation. We develop cache migration schemes that utilize fast banks while limiting the cost due to migration. Our experiments show that there is a great performance benefit in exploiting fast memory banks through migration. On average, a variation-aware management can improve the performance of a workload over the baseline (where the speed of the slowest bank is assumed for all banks) by 17.8%. We are also only 0.45% away in performance from an ideal memory where no PV is present

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling proved to effectively reduce the energy consumption of digital circuits, additional energy savings are still required for a longer battery life. One of the main limitations of essentially any low-energy technique is the potential degradation of the quality of service (QoS). Thus, a thorough understanding of how circuits behave when operated around the point of first failure (PoFF) is key for the effective application of conventional energy-efficient methods as well as for the development of future low-energy techniques. In this thesis, a variety of circuits, techniques, and tools is described to reduce the energy consumption in digital systems when operated either in the safe and conservative exact region, close to the PoFF, or even inside the inexact region. A straightforward approach to reduce the power consumed by clock distribution while safely operating in the exact region is dual-edge-triggered (DET) clocking. However, the DET approach is rarely taken, primarily due to the perceived complexity of its integration. In this thesis, a fully automated design flow is introduced for applying DET clocking to a conventional single-edge-triggered (SET) design. In addition, the first static true-single-phase-clock DET flip-flop (DET-FF) that completely avoids clock-overlap hazards of DET registers is proposed. Even though the correct timing of synchronous circuits is ensured in worst-case conditions, the critical path might not always be excited. Thus, dynamic clock adjustment (DCA) has been proposed to trim any available dynamic timing margin by changing the operating clock frequency at runtime. This thesis describes a dynamically-adjustable clock generator (DCG) capable of modifying the period of the produced clock signal on a cycle-by-cycle basis that enables the DCA technique. In addition, a timing-monitoring sequential (TMS) that detects input transitions on either one of the clock phases to enable the selection of the best timing-monitoring strategy at runtime is proposed. Energy-quality scaling techniques aimat trading lower energy consumption for a small degradation on the QoS whenever approximations can be tolerated. In this thesis, a low-power methodology for the perturbation of baseline coefficients in reconfigurable finite impulse response (FIR) filters is proposed. The baseline coefficients are optimized to reduce the switching activity of the multipliers in the FIR filter, enabling the possibility of scaling the power consumption of the filter at runtime. The area as well as the leakage power of many system-on-chips is often dominated by embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to the conventional static random-access memory (SRAM) when a higher memory density is desired. However, due to GC-eDRAMs relying on many interdependent variables, the adaptation of existing memories and the design of future GCeDRAMs prove to be highly complex tasks. Thus, the first modeling tool that estimates timing, memory availability, bandwidth, and area of GC-eDRAMs for a fast exploration of their design space is proposed in this thesis