On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure

Using MEMS in class D amplifiers for standard GSM carrier

The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater than 33 dBm and the estimated loss (0.5-1) dB. A model for the power amplifier using MEMS passive devices has been developed. The model helps to determine the design parameters that affect the performance and reliability of the system that operate an RF transceiver. The optimization of the amplifier and the MEMS capacitor switching devices and how to integrate the system, will also be discussed. The design and the equivalent circuit were simulated using a PSpice model

Utilisation of microsystems technology in radio frequency and microwave applications

The market trends of the rapidly growing communication systems require new product architectures and services that are only realisable by utilising technologies beyond that of planar integrated circuits. Microsystems technology (MST) is one such technology which can revolutionise radio frequency (RF) and microwave applications. This article discusses the enabling potential of the MST to meet the stringent requirements of modern communication systems. RF MST fabrication technologies and actuation mechanisms empower conventional processes by alleviating the substrate effects on passive devices and provide product designers with high quality versatile microscale components which can facilitate system integration and lead to novel architectures with enhanced robustness and reduced power consumption. An insight on the variety of components that can be fabricated using the MST is given, emphasizing their excellent electrical performance and versatility. Research issues that need to be addressed are also discussed. Finally, this article discusses the main approaches for integrating MST devices in RF and microwave applications together with the difficulties that need to be overcome in order to make such devices readily available for volume-production.peer-reviewe

Reconfigurable Reflectarrays and Array Lenses for Dynamic Antenna Beam Control: A Review

Advances in reflectarrays and array lenses with electronic beam-forming capabilities are enabling a host of new possibilities for these high-performance, low-cost antenna architectures. This paper reviews enabling technologies and topologies of reconfigurable reflectarray and array lens designs, and surveys a range of experimental implementations and achievements that have been made in this area in recent years. The paper describes the fundamental design approaches employed in realizing reconfigurable designs, and explores advanced capabilities of these nascent architectures, such as multi-band operation, polarization manipulation, frequency agility, and amplification. Finally, the paper concludes by discussing future challenges and possibilities for these antennas.Comment: 16 pages, 12 figure

SOI RF-MEMS Based Variable Attenuator for Millimeter-Wave Applications

The most-attractive feature of microelectromechanical systems (MEMS) technology is that it enables the integration of a whole system on a single chip, leading to positive effects on the performance, reliability and cost. MEMS has made it possible to design IC-compatible radio frequency (RF) devices for wireless and satellite communication systems. Recently, with the advent of 5G, there is a huge market pull towards millimeter-wave devices. Variable attenuators are widely employed for adjusting signal levels in high frequency equipment. RF circuits such as automatic gain control amplifiers, broadband vector modulators, full duplex wireless systems, and radar systems are some of the primary applications of variable attenuators. This thesis describes the development of a millimeter-wave RF MEMS-based variable attenuator implemented by monolithically integrating Coplanar Waveguide (CPW) based hybrid couplers with lateral MEMS varactors on a Silicon–on–Insulator (SOI) substrate. The MEMS varactor features a Chevron type electrothermal actuator that controls the lateral movement of a thick plate, allowing precise change in the capacitive loading on a CPW line leading to a change in isolation between input and output. Electrothermal actuators have been employed in the design instead of electrostatic ones because they can generate relatively larger in-line deflection and force within a small footprint. They also provide the advantage of easy integration with other electrical micro-systems on the same chip, since their fabrication process is compatible with general IC fabrication processes. The development of an efficient and reliable actuator has played an important role in the performance of the proposed design of MEMS variable attenuator. A Thermoreflectance (TR) imaging system is used to acquire the surface temperature profiles of the electrothermal actuator employed in the design, so as to study the temperature distribution, displacement and failure analysis of the Chevron actuator. The 60 GHz variable attenuator was developed using a custom fabrication process on an SOI substrate with a device footprint of 3.8 mm x 3.1 mm. The fabrication process has a high yield due to the high-aspect-ratio single-crystal-silicon structures, which are free from warping, pre-deformation and sticking during the wet etching process. The SOI wafer used has a high resistivity (HR) silicon (Si) handle layer that provides an excellent substrate material for RF communication devices at microwave and millimeter wave frequencies. This low-cost fabrication process provides the flexibility to extend this module and implement more complex RF signal conditioning functions. It is thus an appealing candidate for realizing a wide range of reconfigurable RF devices. The measured RF performance of the 60 GHz variable attenuator shows that the device exhibits attenuation levels (|S21|) ranging from 10 dB to 25 dB over a bandwidth of 4 GHz and a return loss of better than 20 dB. The thesis also presents the design and implementation of a MEMS-based impedance tuner on a Silicon-On-Insulator (SOI) substrate. The tuner is comprised of four varactors monolithically integrated with CPW lines. Chevron actuators control the lateral motion of capacitive thick plates used as contactless lateral MEMS varactors, achieving a capacitance range of 0.19 pF to 0.8 pF. The improvement of the Smith chart coverage is achieved by proper choice of the electrical lengths of the CPW lines and precise control of the lateral motion of the capacitive plates. The measured results demonstrate good impedance matching coverage, with an insertion loss of 2.9 dB. The devices presented in this thesis provide repeatable and reliable operation due to their robust, thick-silicon structures. Therefore, they exhibit relatively low residual stress and are free from stiction and micro-welding problems