Subthreshold circuits: Design, implementation and application

Digital circuits operating in the subthreshold region of the transistor are being used as an ideal option for ultra low power complementary metal-oxide-semiconductor (CMOS) design. The use of subthreshold circuit design in cryptographic systems is gaining importance as a counter measure to power analysis attacks. A power analysis attack is a non-invasive side channel attack in which the power consumption of the cryptographic system can be analyzed to retrieve the encrypted data. A number of techniques to increase the resistance to power attacks have been proposed at algorithmic and hardware levels, but these techniques suffer from large area and power overheads. The main aim of this research is to understand the viability of implementing subthreshold systems for cryptographic applications. Standard cell libraries in subthreshold are designed and a methodology to identify the minimum energy point, aspect ratio, frequency range and operating voltage for CMOS standard cells is defined. As scalar multiplication is the fundamental operation in elliptic curve cryptographic systems, a digit-level gaussian normal basis (GNB) multiplier is implemented using the aforementioned standard cells. A similar standard-cell library is designed for the multiplier to operate in the superthreshold regime. The subthreshold and superthreshold multipliers are then subjected to a differential power analysis attack. Power performance and signal-to-noise ratio (SNR) of both these systems are compared to evaluate the usefulness of the subthreshold design. The power consumption of the subthreshold multiplier is 4.554 uW, the speed of the multiplier is 65.1 KHz and the SNR is 40 dB. The superthreshold multiplier has a power consumption of 4.005 mW, the speed of the multiplier is 330 MHz and the SNR is 200 dB. Reduced power consumption, hence reduced SNR, increases the resistance of the subthreshold multiplier against power analysis attacks. (Refer to PDF for exact formulas)

A 0.68V 0.68mW 2.4GHz PLL for ultra-low power RF systems

A 2.4GHz PLL consuming 0.68mW has been implemented in 65nm LPCMOS for use in ultra-low power Bluetooth Low Energy (BLE) applications. VCO, charge pump and dynamic flip-flop design optimization allow low voltage operation at 0.68V, bringing down dynamic power. The integer-N PLL covers all BLE channels and has a phase noise of −110dBc/Hz at 1MHz offset. To extend operation to extremely low duty cycles, extensive power gating is applied to bring the leakage power down to 170pW.Shell Oil CompanyTexas Instruments Incorporate

Design of a process monitor and of peripheral circuits enabling the characterisation of CMOS 45nm Ultra Low Power and Litho Friendly optimised standard cells

L’evoluzione della tecnologia CMOS è caratterizzata dallo scaling delle dimensioni dei dispositivi e dalla riduzione del consumo di potenza. Dal momento che le difficoltà di realizzazione aumentano al diminuire delle dimensioni, nei nodi tecnologici più recenti la velocità del processo di scaling sta diminuendo. Uno dei maggiori problemi causati dalla riduzione delle dimensioni dei dispositivi è la variabilità del processo di fabbricazione. L’obiettivo di questo progetto è quello di ridurre gli effetti che la variabilità del processo di realizzazione nel nodo tecnologico CMOS 45 nm ha sulle prestazioni della logica digitale, grazie a metodi di design non convenzionali. In questo progetto è stato realizzato un testchip per studiare e quantificare i vantaggi, in termini di prestazioni, ottenuti tramite la progettazione di librerie standard-like ottimizzate secondo canoni di litho-friendliness (LF) e ultra low power (ULP). Le standard cells LF utilizzano layout estremamente regolari. Le standard cells ULP sono progettate per operare con tensioni di alimentazioni notevolmente ridotte. Il fine principale del testchip sta nell’ottenere una panoramica della variabilità locale e globale di parametri significativi nella progettazione digitale: ad esempio la frequenza di lavoro e il consumo di potenza. Inoltre, nel testchip sono stati realizzati alcuni circuiti originali per il monitoraggio della qualità del processo di fabbricazione. The evolution of the CMOS technology is characterized by the scaling of transistors size and by the reduction of their power dissipation. In the last technology nodes the speed of the scaling process is decreasing, since the complexity of the technology increases with its size reduction. One of the main issues caused by the shrinking of the transistor size is the variability of the fabrication process. The target of this project is to reduce the effects of the variability of the realisation process in a CMOS 45 nm technology node in digital circuits performances, using unconventional design methods. A testchip is realised in this project to investigate and to quantify the improvement of the circuit performances obtained through the design of dedicated litho-friendly (LF) and of the Ultra Low Power (ULP) standard-like libraries. The LF standard cells libraries are optimised for lithography using ultra regular layout styles. The ULP standard cells library is optimised to operate at extremely low supply voltage. The main aim of the testchip is to get insight into the local and the global variability of relevant parameters for digital design, such as operating frequency and power consumption. In this testchip some structures are also included, to develop some innovative circuits that should help to monitor the quality of the technology process

Ultra Low Power Digital Circuit Design for Wireless Sensor Network Applications

Ny forskning innenfor feltet trådløse sensornettverk åpner for nye og innovative produkter og løsninger. Biomedisinske anvendelser er blant områdene med størst potensial og det investeres i dag betydelige beløp for å bruke denne teknologien for å gjøre medisinsk diagnostikk mer effektiv samtidig som man åpner for fjerndiagnostikk basert på trådløse sensornoder integrert i et ”helsenett”. Målet er å forbedre tjenestekvalitet og redusere kostnader samtidig som brukerne skal oppleve forbedret livskvalitet som følge av økt trygghet og mulighet for å tilbringe mest mulig tid i eget hjem og unngå unødvendige sykehusbesøk og innleggelser. For å gjøre dette til en realitet er man avhengige av sensorelektronikk som bruker minst mulig energi slik at man oppnår tilstrekkelig batterilevetid selv med veldig små batterier. I sin avhandling ” Ultra Low power Digital Circuit Design for Wireless Sensor Network Applications” har PhD-kandidat Farshad Moradi fokusert på nye løsninger innenfor konstruksjon av energigjerrig digital kretselektronikk. Avhandlingen presenterer nye løsninger både innenfor aritmetiske og kombinatoriske kretser, samtidig som den studerer nye statiske minneelementer (SRAM) og alternative minnearkitekturer. Den ser også på utfordringene som oppstår når silisiumteknologien nedskaleres i takt med mikroprosessorutviklingen og foreslår løsninger som bidrar til å gjøre kretsløsninger mer robuste og skalerbare i forhold til denne utviklingen. De viktigste konklusjonene av arbeidet er at man ved å introdusere nye konstruksjonsteknikker både er i stand til å redusere energiforbruket samtidig som robusthet og teknologiskalerbarhet øker. Forskningen har vært utført i samarbeid med Purdue University og vært finansiert av Norges Forskningsråd gjennom FRINATprosjektet ”Micropower Sensor Interface in Nanometer CMOS Technology”

Designing energy-efficient sub-threshold logic circuits using equalization and non-volatile memory circuits using memristors

The very large scale integration (VLSI) community has utilized aggressive complementary metal-oxide semiconductor (CMOS) technology scaling to meet the ever-increasing performance requirements of computing systems. However, as we enter the nanoscale regime, the prevalent process variation effects degrade the CMOS device reliability. Hence, it is increasingly essential to explore emerging technologies which are compatible with the conventional CMOS process for designing highly-dense memory/logic circuits. Memristor technology is being explored as a potential candidate in designing non-volatile memory arrays and logic circuits with high density, low latency and small energy consumption. In this thesis, we present the detailed functionality of multi-bit 1-Transistor 1-memRistor (1T1R) cell-based memory arrays. We present the performance and energy models for an individual 1T1R memory cell and the memory array as a whole. We have considered TiO2- and HfOx-based memristors, and for these technologies there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO2-based RRAM array consumes the least write energy (4.06 pJ/bit) and read energy (188 fJ/bit) when storing 3 bits/cell for 100 nsec write and 1 nsec read access times. Similarly, HfOx-based RRAM array consumes the least write energy (365 fJ/bit) and read energy (173 fJ/bit) when storing 3 bits/cell for 1 nsec write and 200 nsec read access times. On the logic side, we investigate the use of equalization techniques to improve the energy efficiency of digital sequential logic circuits in sub-threshold regime. We first propose the use of a variable threshold feedback equalizer circuit with combinational logic blocks to mitigate the timing errors in digital logic designed in sub-threshold regime. This mitigation of timing errors can be leveraged to reduce the dominant leakage energy by scaling supply voltage or decreasing the propagation delay. At the fixed supply voltage, we can decrease the propagation delay of the critical path in a combinational logic block using equalizer circuits and, correspondingly decrease the leakage energy consumption. For a 8-bit carry lookahead adder designed in UMC 130 nm process, the operating frequency can be increased by 22.87% (on average), while reducing the leakage energy by 22.6% (on average) in the sub-threshold regime. Overall, the feedback equalization technique provides up to 35.4% lower energy-delay product compared to the conventional non-equalized logic. We also propose a tunable adaptive feedback equalizer circuit that can be used with sequential digital logic to mitigate the process variation effects and reduce the dominant leakage energy component in sub-threshold digital logic circuits. For a 64-bit adder designed in 130 nm our proposed approach can reduce the normalized delay variation of the critical path delay from 16.1% to 11.4% while reducing the energy-delay product by 25.83% at minimum energy supply voltage. In addition, we present detailed energy-performance models of the adaptive feedback equalizer circuit. This work serves as a foundation for the design of robust, energy-efficient digital logic circuits in sub-threshold regime

A low-power reconfigurable logic array based on double-gate transistors

A fine-grained reconfigurable architecture based on double gate technology is proposed and analyzed. The logic function operating on the first gate of a double-gate (DG) transistor is reconfigured by altering the charge on its second gate. Each cell in the array can act as logic or interconnect, or both, contrasting with current field-programmable gate array structures in which logic and interconnect are built and configured separately. Simulation results are presented for a fully depleted SOI DG-MOSFET implementation and contrasted with two other proposals from the literature based on directed self-assembly