Ultra-low noise, bi-polar, programmable current sources

We present the design process and implementation of fully open-source, ultra-low noise programmable current source systems in two configurations. Although originally designed as coil drivers for Optically Pumped Magnetometers (OPMs), the device specifications make them potentially useful in a range of applications. The devices feature a bi-directional current range of $\pm$~10~mA and $\pm$~250~mA respectively on three independent channels with 16-bit resolution. Both devices feature narrow 1/f noise bandwidth of 1~Hz, enabling magnetic field manipulation for high-performance OPMs. They exhibit low noise of 146.3~pA/$\sqrt{\mathrm{Hz}}$ and 4114~pA/$\sqrt{\mathrm{Hz}}$ which translates to 14.57~ppb/$\sqrt{\mathrm{Hz}}$ and 16.46~ppb/$\sqrt{\mathrm{Hz}}$ noise relative to full scale.Comment: 9 pages, 9 figure

Ultra-low noise, bi-polar, programmable current sources

We present the design process and implementation of fully open-source, ultra-low noise programmable current source systems in two configurations. Although originally designed as coil drivers for Optically Pumped Magnetometers (OPMs), the device specifications make them potentially useful in a range of applications. The devices feature a bi-directional current range of ±10 and ±250 mA on three independent channels with 16-bit resolution. Both devices feature a narrow 1/f noise bandwidth of 1 Hz, enabling magnetic field manipulation for high-performance OPMs. They exhibit a low noise of 146 pA/√Hz and 4.1 nA/√Hz, which translates to 15 and 16 ppb/√Hz noise relative to full scale

Experimental characterization of Random Telegraph Noise in FDSOI technology and its application for security primitives

The shrinking of transistors and consequent decrease in operational voltage, specially for Ultra-Low Voltage (ULV) applications such as IoT, has driven current technology to be very sensitive to the effects of random telegraph noise (RTN), the result of trapping and detrapping of carriers in a transistor’s oxide trap. Such a source of noise is attractive for the implementation of security primitives due to its resilience to temperature and supply voltage variations. However, it stands out from other noise sources for its low speed. The use of FDSOI technology, through the ability of controlling body bias, can be the key to optimize RTN speed for such applications. In this project, an experimental characterization of RTN behavior in an FDSOI ROSC- based chip has been conducted to evaluate the potential application of such a technology in security primitives. Results show that FDSOI technology can be employed to significantly increase or decrease RTN speed and even compensate for the effect of supply voltage and temperature variations

Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20 °C and 120 °C

Semiconductor mode-locked lasers (MLLs) are promising frequency comb sources for dense wavelength-division-multiplexing (DWDM) data communications. Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions. To the best of our knowledge, however, to date, there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range. Here, we report a frequency comb source based on a quantum dot (QD) MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120°C. The two-section passively mode-locked InAs QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz (corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain) with a variation of 0.07 GHz in the tone spacing over the tested temperature range. By keeping the saturable absorber reversely biased at −2 V , stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only, providing easy control of the device. At an elevated temperature of 100°C, the device shows a 6 dB comb bandwidth of 4.81 nm and 31 tones with >36 dB optical signal-to-noise ratio. The corresponding relative intensity noise, averaged between 0.5 GHz and 10 GHz, is −146 dBc/Hz . Our results show the viability of the InAs QD MLLs as ultra-stable, uncooled frequency comb sources for low-cost, large-bandwidth, and low-energy-consumption optical data communications

Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C

Semiconductor mode-locked lasers (MLLs) are promising frequency comb sources for dense wavelength-division-multiplexing (DWDM) data communications. Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions. To the best of our knowledge, however, to date, there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range. Here, we report a frequency comb source based on a quantum dot (QD) MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120°C. The two-section passively mode-locked InAs QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz (corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain) with a variation of 0.07 GHz in the tone spacing over the tested temperature range. By keeping the saturable absorber reversely biased at − 2    V , stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only, providing easy control of the device. At an elevated temperature of 100°C, the device shows a 6 dB comb bandwidth of 4.81 nm and 31 tones with > 36    dB optical signal-to-noise ratio. The corresponding relative intensity noise, averaged between 0.5 GHz and 10 GHz, is − 146    dBc / Hz . Our results show the viability of the InAs QD MLLs as ultra-stable, uncooled frequency comb sources for low-cost, large-bandwidth, and low-energy-consumption optical data communications.Royal Academy of Engineering (RF201617/16/28); Engineering and Physical Sciences Research Council (EP/R041792/1, EP/T01394X/1)

A candidate redshift z ~ 10 galaxy and rapid changes in that population at an age of 500 Myr

Searches for very-high-redshift galaxies over the past decade have yielded a large sample of more than 6,000 galaxies existing just 900-2,000 million years (Myr) after the Big Bang (redshifts 6 > z > 3; ref. 1). The Hubble Ultra Deep Field (HUDF09) data have yielded the first reliable detections of z ~ 8 galaxies that, together with reports of a gamma-ray burst at z ~ 8.2 (refs 10, 11), constitute the earliest objects reliably reported to date. Observations of z ~ 7-8 galaxies suggest substantial star formation at z > 9-10. Here we use the full two-year HUDF09 data to conduct an ultra-deep search for z ~ 10 galaxies in the heart of the reionization epoch, only 500 Myr after the Big Bang. Not only do we find one possible z ~ 10 galaxy candidate, but we show that, regardless of source detections, the star formation rate density is much smaller (~10%) at this time than it is just ~200 Myr later at z ~ 8. This demonstrates how rapid galaxy build-up was at z ~ 10, as galaxies increased in both luminosity density and volume density from z ~ 8 to z ~ 10. The 100-200 Myr before z ~ 10 is clearly a crucial phase in the assembly of the earliest galaxies.Comment: 41 pages, 14 figures, 2 tables, Nature, in pres

4-Dimensional Tracking with Ultra-Fast Silicon Detectors

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4-dimensional tracking. In the last section we present the experimental results, demonstrating the validity of our research path.Comment: 72 pages, 3 tables, 55 figure

High power and ultra-low-noise photodetector for squeezed-light enhanced gravitational wave detectors

Current laser-interferometric gravitational wave detectors employ a self-homodyne readout scheme where a comparatively large light power (5–50 mW) is detected per photosensitive element. For best sensitivity to gravitational waves, signal levels as low as the quantum shot noise have to be measured as accurately as possible. The electronic noise of the detection circuit can produce a relevant limit to this accuracy, in particular when squeezed states of light are used to reduce the quantum noise. We present a new electronic circuit design reducing the electronic noise of the photodetection circuit in the audio band. In the application of this circuit at the gravitational-wave detector GEO 600 the shot-noise to electronic noise ratio was permanently improved by a factor of more than 4 above 1 kHz, while the dynamic range was improved by a factor of 7. The noise equivalent photocurrent of the implemented photodetector and circuit is about 5 µA/ √\ud Hz above 1 kHz with a maximum detectable photocurrent of 20 mA. With the new circuit, the observed squeezing level in GEO 600 increased by 0.2 dB. The new circuit also creates headroom for higher laser power and more squeezing to be observed in the future in GEO 600 and is applicable to other optics experiments