The shrinking of transistors and consequent decrease in operational voltage, specially for
Ultra-Low Voltage (ULV) applications such as IoT, has driven current technology to be
very sensitive to the effects of random telegraph noise (RTN), the result of trapping and
detrapping of carriers in a transistor’s oxide trap. Such a source of noise is attractive for the
implementation of security primitives due to its resilience to temperature and supply voltage
variations. However, it stands out from other noise sources for its low speed. The use of
FDSOI technology, through the ability of controlling body bias, can be the key to optimize
RTN speed for such applications.
In this project, an experimental characterization of RTN behavior in an FDSOI ROSC-
based chip has been conducted to evaluate the potential application of such a technology in
security primitives.
Results show that FDSOI technology can be employed to significantly increase or decrease
RTN speed and even compensate for the effect of supply voltage and temperature variations
