3,009 research outputs found
Charge Offset Stability in Si Single Electron Devices with Al Gates
We report on the charge offset drift (time stability) in Si single electron
devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset
drift (0.15 ) is intermediate between that of Al/AlO/Al tunnel junctions
(greater than 1 ) and Si SEDs defined with Si gates (0.01 ). This range
of values suggests that defects in the AlO are the main cause of the charge
offset drift instability
A silicon-based single-electron interferometer coupled to a fermionic sea
We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the
influence of projective readout using a charge qubit tunnel-coupled to a
fermionic sea. This allows us to characterise the coherent charge qubit
dynamics in the strong-driving regime. The device is realised within a silicon
complementary metal-oxide-semiconductor (CMOS) transistor. We first read out
the charge state of the system in a continuous non-demolition manner by
measuring the dispersive response of a high-frequency electrical resonator
coupled to the quantum system via the gate. By performing multiple fast
passages around the qubit avoided crossing, we observe a multi-passage LZSM
interferometry pattern. At larger driving amplitudes, a projective measurement
to an even-parity charge state is realised, showing a strong enhancement of the
dispersive readout signal. At even larger driving amplitudes, two projective
measurements are realised within the coherent evolution resulting in the
disappearance of the interference pattern. Our results demonstrate a way to
increase the state readout signal of coherent quantum systems and replicate
single-electron analogues of optical interferometry within a CMOS transistor
Electric-field tuning of the valley splitting in silicon corner dots
We perform an excited state spectroscopy analysis of a silicon corner dot in
a nanowire field-effect transistor to assess the electric field tunability of
the valley splitting. First, we demonstrate a back-gate-controlled transition
between a single quantum dot and a double quantum dot in parallel that allows
tuning the device in to corner dot formation. We find a linear dependence of
the valley splitting on back-gate voltage, from to with a slope of (or equivalently a slope
of with respect to the effective field). The
experimental results are backed up by tight-binding simulations that include
the effect of surface roughness, remote charges in the gate stack and discrete
dopants in the channel. Our results demonstrate a way to electrically tune the
valley splitting in silicon-on-insulator-based quantum dots, a requirement to
achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded;
Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37
Towards low-dimensional hole systems in Be-doped GaAs nanowires
GaAs was central to the development of quantum devices but is rarely used for
nanowire-based quantum devices with InAs, InSb and SiGe instead taking the
leading role. p-type GaAs nanowires offer a path to studying strongly-confined
0D and 1D hole systems with strong spin-orbit effects, motivating our
development of nanowire transistors featuring Be-doped p-type GaAs nanowires,
AuBe alloy contacts and patterned local gate electrodes towards making
nanowire-based quantum hole devices. We report on nanowire transistors with
traditional substrate back-gates and EBL-defined metal/oxide top-gates produced
using GaAs nanowires with three different Be-doping densities and various AuBe
contact processing recipes. We show that contact annealing only brings small
improvements for the moderately-doped devices under conditions of lower anneal
temperature and short anneal time. We only obtain good transistor performance
for moderate doping, with conduction freezing out at low temperature for
lowly-doped nanowires and inability to reach a clear off-state under gating for
the highly-doped nanowires. Our best devices give on-state conductivity 95 nS,
off-state conductivity 2 pS, on-off ratio ~, and sub-threshold slope 50
mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped
nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a
plateau in the sub-threshold region that is reproducible in separate cool-downs
and indicative of possible conductance quantization highlighting the potential
for future quantum device studies in this material system
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
We present a novel reconfigurable metal-oxide-semiconductor multi-gate
transistor that can host a quadruple quantum dot in silicon. The device consist
of an industrial quadruple-gate silicon nanowire field-effect transistor.
Exploiting the corner effect, we study the versatility of the structure in the
single quantum dot and the serial double quantum dot regimes and extract the
relevant capacitance parameters. We address the fabrication variability of the
quadruple-gate approach which, paired with improved silicon fabrication
techniques, makes the corner state quantum dot approach a promising candidate
for a scalable quantum information architecture
A hybrid metal/semiconductor electron pump for quantum metrology
Electron pumps capable of delivering a current higher than 100pA with
sufficient accuracy are likely to become the direct mise en pratique of the
possible new quantum definition of the ampere. Furthermore, they are essential
for closing the quantum metrological triangle experiment which tests for
possible corrections to the quantum relations linking e and h, the electron
charge and the Planck constant, to voltage, resistance and current. We present
here single-island hybrid metal/semiconductor transistor pumps which combine
the simplicity and efficiency of Coulomb blockade in metals with the
unsurpassed performances of silicon switches. Robust and simple pumping at
650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage
bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the
calculated value, well within the 1.5e-3 uncertainty of the measurement setup.
Multi-charge pumping can be performed. The simple design fully integrated in an
industrial CMOS process makes it an ideal candidate for national measurement
institutes to realize and share a future quantum ampere
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