The design of IPT system for multiple kitchen appliances using class E LCCL circuit

Since many years ago, kitchen appliances are powered up by cable connected. This create a troublesome case as wire might tangle together and cause kitchen table messy. Due to this, wireless power technology (WPT) is introduced as its ability is to transmit power to load without physical contact. This leads to cordless solution better in safety as the product can be completely seal, highly expandable power range. This work focuses on the design of WPT based on inductive approach to power up multiple kitchen appliances. The selection of inductive approach over its partners capacitive and acoustic is mainly due to high power efficiency. Class E inverter is proposed here to convert the DC to AC current to drive the inductive link. A 1 MHz operating frequency is used. To ensure the circuit is robust with load variations, an LCCL impedance matching is proposed. This solution is table to maintain the output power if there is a slight change in load impedance. Finally, the developed prototype is able to supply 50V utput which can achieve power transmission up to 81.76%

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

A 90-GHz Asymmetrical Single-Pole Double-Throw Switch with >19.5-dBm 1-dB Compression Point in Transmission Mode Using 55-nm Bulk CMOS Technology

© Copyright 2021 IEEE. This is the accepted manuscript version of an article which has been published in final form at https://doi.org/10.1109/TCSI.2021.3106231The millimeter-wave (mm-wave) single-pole double-throw (SPDT) switch designed in bulk CMOS technology has limited power-handling capability in terms of 1-dB compression point (P1dB) inherently. This is mainly due to the low threshold voltage of the switching transistors used for shunt-connected configuration. To solve this issue, an innovative approach is presented in this work, which utilizes a unique passive ring structure. It allows a relatively strong RF signal passing through the TX branch, while the switching transistors are turned on. Thus, the fundamental limitation for P1dB due to reduced threshold voltage is overcome. To prove the presented approach is feasible in practice, a 90-GHz asymmetrical SPDT switch is designed in a standard 55-nm bulk CMOS technology. The design has achieved an insertion loss of 3.2 dB and 3.6 dB in TX and RX mode, respectively. Moreover, more than 20 dB isolation is obtained in both modes. Because of using the proposed passive ring structure, a remarkable P1dB is achieved. No gain compression is observed at all, while a 19.5 dBm input power is injected into the TX branch of the designed SPDT switch. The die area of this design is only 0.26 mm2.Peer reviewe