On-chip Spiral Inductor/transformer Design And Modeling For Rf Applications

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC\u27s such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990\u27s. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

Methods and tools for the design of RFICs

Ambient intelligence is going to focus the next advances in wireless technologies. Hence, the increasing demand on radio frequency (RF) devices and applications represents, not only a challenge for technological industries to improve its roadmaps, but also for RF engineers to design more robust, low-power, small-size and low-cost devices. Regarding to communication robustness, in the latest years, differential topologies have acquired an important relevance because of its natural noise and interference immunity. Within this framework, a differential n-port device can still be treated with the classical analysis circuit theory by means of Z-,Y-, h-parameters or the most suitable S-parameters in the radio frequency field. Despite of it, Bockelman introduced the mixed-mode scattering parameters, which more properly express the differential and common-mode behavior of symmetrical devices. Since then, such parameters have been used with a varying degree of success, as it will be shown, mainly because of a misinterpretation. Thereby, this thesis is devoted to extend the theory of mixed-mode scattering parameters and proposes the methodology to analyze such devices. For this proposal, the simplest case of a two-port device is developed. By solving this simple case, most of the lacks of the current theory are filled up. As instance, it allows the characterization and comparison of symmetric and spiral inductors, which have remained a controversy point until now. After solving this case, the theory is extended to a n-port device. Another key point on the fast and inexpensive development of radio frequency devices is the advance on fast CAD tools for the analysis and synthesis of passive devices. In the case of silicon technologies, planar inductors have become the most popular shapes because of its integrability. However, the design of inductors entails a deep experience and acknowledge not only on the behavior of such devices but on the use of electromagnetic (EM) simulators. Unfortunately, the use of EM simulators consumes an important quantity of time and resources. Thereby, this thesis is devoted to improve some of the aspects that slow down the synthesis process of inductors. Therefore, an ‘ab initio’ technique for the meshing of planar radio frequency and microwave circuits is described. The technique presented can evaluate the losses in the component with a high accuracy just in few seconds where an electromagnetic simulator would normally last hours. Likewise, a simple bisection algorithm for the synthesis of compact planar inductors is presented. It is based on a set of heuristic rules obtained from the study of the electromagnetic behavior of these planar devices. Additionally, design of a single-ended to differential low noise amplifier (LNA) in a CMOS technology is performed by using the methods and tools described.L'enginyeria de radiofreqüència i la tecnologia de microones han assolit un desenvolupament inimaginable i avui en dia formen part de la majoria de les nostres activitats diàries. Probablement, la tecnologia mòbil ha tingut un desenvolupament més ràpid que qualsevol altre avenç tecnològic de l'era digital. Avui en dia, podem dir que el paradigma de la mobilitat s'ha assolit i tenim accés ràpid a internet des de qualsevol lloc on podem estar amb un dispositiu de butxaca. No obstant això, encara hi ha fites per endavant. Es més que probable que el paradigma de l’ "ambient intelligence” sigui el centre dels pròxims avenços en les tecnologies sense fils. A diferencia del paradigma de l"ambient intelligence', l'evolució de la tecnologia de la informació mai ha tingut l'objectiu explícit de canviar la societat, sinó que ho van fer com un efecte secundari, en canvi, les visions d' “ambient intelligence” proposen expressament el transformar la societat mitjançant la connexió completa i la seva informatització. Per tant, l'augment de la demanda de dispositius de ràdio freqüència (RF) i de les seves possibles aplicacions representa, no només un repte per a les indústries tecnològiques per millorar els seus plans de treball, sinó també per als enginyers de RF que hauran de dissenyar dispositius de baixa potència, més robusts, de mida petita i de baix cost. Quant a la robustesa dels dispositius, en els últims anys, les topologies de tipus diferencial han adquirit una important rellevància per la seva immunitat natural al soroll i resistència a les interferències. Dins d'aquest marc, un dispositiu de nports diferencial, encara pot ser tractat com un dispositiu 2nx2n i la teoria clàssica d'anàlisi de circuits (és a dir, la temia de quadripols) es pot aplicar a través de paràmetres Z, Y, h o els paràmetres S, més adequats en el camp de freqüència de ràdio. Tot i això, Bockelman i Eisenstadt introdueixen els paràmetres S mixtos, que expressen més adequadament el comportament diferencial i en mode comú de dispositius simètrics o asimètrics. Des de llavors, aquests paràmetres s'han utilitzat amb un grau variable d'èxit, com es mostrarà, principalment a causa d'una mala interpretació. D'aquesta manera, la primera part d'aquesta tesi està dedicada a estendre la teoria dels paràmetres S de mode mixt i proposa la metodologia d'anàlisi d'aquest tipus de dispositius i circuits. D'aquesta forma, en el Capítol 2, es desenvolupa el cas més simple d'un dispositiu de dos ports. En resoldre aquest cas simple, la major part de les mancances de la teoria actual es posen de relleu. Com a exemple, pennet la caracterització i la comparació de bobines simètriques i espiral no simètriques, que han estat un punt de controvèrsia fins ara. Després de resoldre aquest cas, al Capítol 3 s'estén la teOIia a un dispositiu de n-ports dels quals un nombre pot ser single-ended i la resta diferencials. És en aquest moment quan la dualitat existent entre els paràmetres S estàndard i de mode mixt es pot veure clarament i es destaca en el seu conjunt. Aquesta teoria permet, tanmateix, estendre la teoria clàssica d'amplificadors quan s'analitzen per mitjà de paràmetres S. Un altre punt clau en el desenvolupament ràpid i de baix cost dels dispositius de radiofreqüència és l'avenç en les eines CAD ràpides per a l'anàlisi i síntesi dels dispositius passius, en especial dels inductors. Aquests dispositius apareixen tot sovint en el disseny de radio freqüència degut a la seva gran versatilitat. Tot i que hi ha hagut múltiples intents de reemplaçar amb components externs o circuits, fins i tot actius, en el cas de les tecnologies de silici, els inductors planars s'han convertit en les formes més populars per la seva integrabilitat. No obstant això, el disseny d'inductors implica conèixer i posseir una experiència profunda no només en el comportament d'aquests dispositius, però també en l'ús de simuladors electromagnètics (EM). Desafortunadament, l'ús dels simuladors EM consumeix una quantitat important de temps i recursos. Per tant, la síntesi dels inductors representa un important inconvenient actualment. D'aquesta manera, la segona part d'aquesta tesi està dedicada a millorar alguns dels aspectes que frenen el procés de síntesi dels inductors. Per tant, en el Capítol 4, es descriu una tècnica 'ab initio' de generació de la malla per bobines planars en ràdio freqüència i microones. La tècnica es basa en l'estudi analític dels fenòmens d'aglomeració de corrent que tenen lloc a l'interior del component. En aquesta avaluació, no es requereix una solució explícita dels corrents i de les càrregues arreu del circuit. Llavors, el nombre de cel•les de la malla assignades a una tira de metall donada, depèn del valor inicialment obtingut a partir de l'estudi analític. La tècnica presentada pot avaluar les pèrdues en el component amb una gran precisió només en uns pocs segons, quan comparat amb un simulador electromagnètic normalment es necessitaria hores. De la mateixa manera, en el Capítol 5 es presenta un senzill algoritme de bisecció per a la síntesi d'inductors planars compactes. Es basa en un conjunt de regles heurístiques obtingut a partir de l'estudi del comportament electromagnètic d'aquests dispositius planars. D'aquesta manera, el nombre d'iteracions es manté moderadament baix.D'altra banda, per tal d'accelerar l'anàlisi en cada pas, s'utilitza un simulador ràpid electromagnètic planar, el qual es basa en el coneixement que es té del component sintetitzat. Finalment, en el Capítol 6, la metodologia de paràmetres S de mode mixt proposada i les eines CAD introduides s'utilitzen àmpliament en el disseny d'un amplificador de baix soroll “single-ended” a diferencial (LNA), mitjançant una tecnologia estàndard CMOS.L'amplificador de baix soroll és un dels components claus en un sistema de recepció de radio freqüència, ja que tendeix a dominar la sensibilitat i la figura de soroll (NF) de tot el sistema. D'altra banda, les característiques d'aquest circuit estan directament relacionades amb els components actius i passius disponibles en una tecnologia donada. Per tant, la tecnologia escollida, el factor de qualitat dels passius, i la forma com es caracteritzen tindran un alt impacte en les principals figures de mèrit del circuit real

The Performance of an Integrated Transformer in a DC/DC Converter

The separation between the low-voltage part and high-voltage part of the converter is formed by a transformer that transfers power while jamming the DC ring. The resonant mode power oscillator is utilized to allow elevated competence power transfer. The on-chip transformer is probable to have elevated value inductance, elevated quality factors and elevated coupling coefficient to decrease the loss in the oscillation. The performance of a transformer is extremely dependent on the structure, topology and other essential structures that create it compatible with the integrated circuits IC process such as patterned ground shield (PGS). Different types of transformers are modeled and simulated in MATLAB; the performances are compared to select the optimum design. The on-chip transformer model is simulated and the Results of MATLAB simulation are exposed, showing an excellent agreement in radio frequency RF

Design of Tunable/Reconfigurable and Compact Microwave Devices

With the rapid development of the modern technology, radio frequency and microwave systems are playing more and more important roles. Since the time the first microwave device was invented, they have been leading not only the military but also our daily life to a new era. In order to make the devices have more practical applications, more and more strict requirements have been imposed. For example, good adaptability, reduced cost and shrank size are highly required. In this thesis, three devices are designed based on this requirement. At first, a symmetric four-port microwave varactor based 90-degree directional coupler with tunable coupling ratios and reconfigurable responses is presented. The proposed coupler is designed based on the modified structure of a crossover, where varactors are loaded. Then, a novel reconfigurable 3-dB directional coupler is presented. Varactors and inductors are loaded to the device to realize the reconfigurable performance. By adjusting the voltage applied to the varactors, the proposed coupler can be reconfigured from a branch-line coupler (90-degree coupler) to a rat-race coupler (180 degree coupler) and vice versa. At last, two types (Type-I and Type-II) of microwave baluns with generalized structures are presented. Different from the conventional transmission-line-based baluns where λ/2 transmission lines or λ/4 coupled lines are used, the proposed baluns are constructed by transmission lines with arbitrary electrical lengths

Design and Evaluation of an L-Band Current-Mode Class-D Power Amplifier Integrated Circuit

Power amplifiers (PAs) convert energy from DC to high frequencies in all radio and microwave transmitter systems be they wireless base stations, handsets, radars, heaters, and so on. PAs are the dominant consumers of energy in these systems and, therefore, the dominant sources of system cost and inefficiency. Research has focused on efficient solid-state PA circuit topologies and their optimization since the 1960s. The 2000s saw the current-mode class-D (CMCD) topology, potentially suitable for today\u27s wireless communications systems, show promise in the UHF frequency band. This thesis describes the design and testing of a high-efficiency CMCD amplifier with an integrated driver stage. In addition, analysis of a merged PA-mixer circuit based on the CMCD is provided

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

Characterization and modeling of microwave spiral inductors and transformers

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