4 research outputs found

    TSV ๋ชจ๋ธ์„ ํฌํ•จํ•˜๋Š” ์ƒ์œ„ ๋ ˆ๋ฒจ 3D-IC ์—ด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ

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    ํ•™์œ„๋…ผ๋ฌธ (์„์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์ „๊ธฐยท์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2014. 8. ์ตœ๊ธฐ์˜.์ˆ˜์‹ญ ๋…„ ๋™์•ˆ ๋ฐ˜๋„์ฒด ๊ธฐ์ˆ ์—์„œ ์ฃผ์š” ๊ด€์‹ฌ์‚ฌ๋Š” ์ง‘์ ๋„(degree of integration)๋ฅผ ๋†’์ด๋Š”๋ฐ ์žˆ์—ˆ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ๊ธฐ์กด์˜ 2D ์ง‘์ ํšŒ๋กœ(Integrated Circuit)์—์„œ์˜ ์ง‘์ ๋„ ํ–ฅ์ƒ์€ ์ด์ œ ํ•œ๊ณ„์— ๋‹ค๋‹ค๋ฅด๊ณ  ์žˆ๋‹ค. ์ด์— 2D์˜ die๋ฅผ ์Œ“์•„ ์˜ฌ๋ฆฌ๋Š” ๋ฐฉ๋ฒ•์„ ๊ณ ์•ˆํ•˜๊ฒŒ ๋˜์—ˆ์œผ๋ฉฐ ์ด 3D stacking ๋ฐฉ๋ฒ•์€ ์œ ๋งํ•œ ๊ธฐ์ˆ ๋กœ ์ „๋ง๋˜๊ณ  ์žˆ๋‹ค. 3D๋กœ ์Œ“์•„ ์˜ฌ๋ ค์ง„ die๋Š” ํ•œ ํ‰๋ฉด์— ๋‚˜๋ž€ํžˆ ์žˆ์„ ๋•Œ๋ณด๋‹ค ๊ฐ™์€ ๋ฉด์ ์— ๋Œ€ํ•ด ์ˆ˜ ๋ฐฐ ์ด์ƒ ๊ทธ ์ง‘์ ๋„๊ฐ€ ์ปค์ง€๊ณ  ๋‚˜๋ž€ํžˆ ์—ฐ๊ฒฐ๋˜๋Š” ๋Œ€์‹  ์ˆ˜์ง์œผ๋กœ ์ „์„ ์ด ์—ฐ๊ฒฐ๋˜๊ธฐ ๋•Œ๋ฌธ์— ๊ทธ ๊ธธ์ด๋„ ํ˜„์ €ํžˆ ์งง์•„์ง„๋‹ค. ์ด ์ „์„ ๊ธธ์ด ๊ฐ์†Œ๋Š” ์‹ค์งˆ์ ์œผ๋กœ ์ž„๊ณ„ ๊ฒฝ๋กœ ์ง€์—ฐ์‹œ๊ฐ„(critical path delay)์˜ ๋‹จ์ถ•๊ณผ ์ „์„ ์—์„œ ์†Œ๋ชจํ•˜๋Š” ์—๋„ˆ์ง€ ๊ฐ์†Œ ๋“ฑ ์—ฌ๋Ÿฌ ๊ฐ€์ง€ ์žฅ์ ๋“ค์ด ์žˆ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ๋ฐ˜๋Œ€๋กœ 2D ์ƒํƒœ์— ๋น„ํ•ด ์ „๋ ฅ ์†Œ๋ชจ์˜ ์ง‘์ ๋„๊ฐ€ ์˜ฌ๋ผ๊ฐ€๊ณ  ๊ณต๊ธฐ ์ ‘์ด‰ ๋ฉด์ ์ด ์ƒ๋Œ€์ ์œผ๋กœ ๋งŽ์ด ๊ฐ์†Œํ•˜๊ธฐ ๋•Œ๋ฌธ์— ๋” ํฐ ์—ด ๋ฌธ์ œ๋ฅผ ๋งž์ดํ•˜๊ฒŒ ๋œ๋‹ค. ์—ด ๋ฌธ์ œ๋ฅผ ๋ถ„์„ํ•˜๊ณ  ํ•ด๊ฒฐํ•˜๊ธฐ ์œ„ํ•ด์„œ๋Š” ์˜จ๋„๋ฅผ ์ธก์ •ํ•  ์ˆ˜ ์žˆ๋Š” ์—ด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๊ฐ€ ํ•„์š”ํ•˜๋‹ค. ์—ด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๋Š” ํฌํ™” ์˜จ๋„๋ฅผ ์ธก์ •ํ•˜๋Š” steady state(์ •์ƒ ์ƒํƒœ) ๋ถ„์„๊ณผ ์ˆœ๊ฐ„ ์˜จ๋„๋ฅผ ์ธก์ •ํ•˜์—ฌ ์˜จ๋„๋ณ€ํ™”์˜ ์ถ”์ด๋ฅผ ๋ณผ ์ˆ˜ ์žˆ๋Š” transient ๋ถ„์„ ๋‘ ๊ฐ€์ง€์˜ ๊ฒฝ์šฐ๊ฐ€ ์žˆ๋‹ค. ๊ธฐ์กด์— ์žˆ๋˜ ๋งŽ์€ ์—ด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๋“ค์€ 2D-IC๋ฅผ ๋‹ค๋ฐฉ๋ฉด์—์„œ ๋ถ„์„ํ•˜๋Š” ๋ฐฉ๋ฒ•์„ ์ œ์‹œํ•˜์˜€๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ 3D-IC๋ฅผ ๋ถ„์„ํ•˜๋Š” ์—ด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๋Š” ๋งŽ์ง€ ์•Š๊ณ  ๊ทธ ์ค‘์— TSV๋ฅผ ๊ณ ๋ คํ•˜๋Š” ๋™์‹œ์— steady state์™€ transient ๋ถ„์„์„ ๋ชจ๋‘ ํ•  ์ˆ˜ ์žˆ๋Š” ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๋Š” ์—†์—ˆ๋‹ค. TSV์™€ ์˜จ๋„๋ฅผ ๊ณ ๋ คํ•˜๋Š” ๊ฒƒ์€ ์ถฉ๋ถ„ํžˆ ์˜๋ฏธ๊ฐ€ ์žˆ๋‹ค. TSV(through silicon via)๋Š” 3D๋กœ ์˜ฌ๋ ค์ง„ die๋“ค์˜ ์ „์„ ์„ ์„œ๋กœ ์—ฐ๊ฒฐํ•˜๊ธฐ ์œ„ํ•œ ์žฅ์น˜๋กœ ๊ตฌ๋ฆฌ(๊ฐ„ํ˜น ํ……์Šคํ…์ด ์‚ฌ์šฉ๋˜๊ธฐ๋„ ํ•จ)๋กœ ์ด๋ฃจ์–ด์ง„ ์›๊ธฐ๋‘ฅ ํ˜•ํƒœ์ด๋ฉฐ ์ด๋Š” die๋“ค์„ ๊ด€ํ†ตํ•˜์—ฌ ์„ค์น˜๋œ๋‹ค. ์ด ๋•Œ ๊ตฌ๋ฆฌ๋Š” TSV ์›๊ธฐ๋‘ฅ์˜ ์•ˆ ์ชฝ์— ์œ„์น˜ํ•œ๋‹ค. TSV๋Š” ์ „์„ ์„ ์—ฐ๊ฒฐํ•˜๋Š” ์—ญํ• ์„ ํ•  ๋ฟ๋งŒ ์•„๋‹ˆ๋ผ ์ „์ฒด ์นฉ์˜ ์—ด ๋ฌธ์ œ๋ฅผ ํ•ด์†Œํ•˜๋Š” ์—ญํ• ๋„ ํ•œ๋‹ค. TSV๋Š” ๋ณดํ†ต ํŒจํ‚ค์ง€์—์„œ spreader์™€ heatsink๋ฅผ ์ œ์™ธํ•œ die๋“ค์„ ๊ด€ํ†ตํ•˜์—ฌ ์—ฐ๊ฒฐํ•˜๊ณ  ์žˆ์–ด์„œ spreader๋‚˜ heatsink์™€ ๋‹ค๋ฅธ die ์‚ฌ์ด์˜ ์—ด ๊ตํ™˜์„ ์‰ฝ๊ฒŒ ํ•ด ์ค€๋‹ค. TSV์˜ ์—ด ์ „๋„์œจ์€ ์นฉ์˜ ์—ด ์ „๋„์œจ๋ณด๋‹ค ํฌ๋‹ค. ๋˜ํ•œ 3D stack ์ค‘๊ฐ„์— ํ•„์š”์— ์˜ํ•ด ์กด์žฌํ•˜๋Š” ์—ฌ๋Ÿฌ ๋‹จ์—ด๋ฌผ์งˆ๋“ค์„ ๊ด€ํ†ตํ•จ์œผ๋กœ์จ TSV๋Š” ํฐ ๋ƒ‰๊ฐ์—ญํ• ์„ ํ•  ์ˆ˜ ์žˆ๊ฒŒ ๋œ๋‹ค. ์ด์— TSV๋กœ ์—ด ๋ฌธ์ œ๋ฅผ ํ•ด๊ฒฐํ•ด ๋ณด๋ ค๋Š” ์‹œ๋„๊ฐ€ ์ ์ฐจ ๋งŽ์•„์ง€๊ณ  ์žˆ๋‹ค [4]. ๋ณธ ๋…ผ๋ฌธ์—์„œ๋Š” transient ์—ด ๋ถ„์„๊ณผ steady state ์—ด ๋ถ„์„์ด ๋ชจ๋‘ ๊ฐ€๋Šฅํ•œ ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ๋ฅผ ์ œ์‹œํ•˜์˜€์œผ๋ฉฐ ๊ทธ ์„ฑ๋Šฅ์„ ์—ฌ๋Ÿฌ ์‹คํ—˜๋“ค๋กœ ์ฆ๋ช…ํ•˜์˜€๋‹ค.A High Level Thermal 3D-IC simulator including TSV model ์„ฑ ๋ช… Sunwook Kim ํ•™๊ณผ ๋ฐ ์ „๊ณต Electrical Engineering The Graduate School Seoul National University For decades, the main interest in semiconductor technology has been in increasing the degree of integration. However, the increase in integration on 2D ICs (integrated circuits) is approaching to its limit. So methods of stacking dies are considered to be a promising technology. 3D stacked die is far more scalable and allows higher degree of integration compared to 2D die. It shortens wire lengths and decreases not only critical path delays but also power consumed by wires. But as the result of stacking, the density of power dissipation rises whereas the area of the surface contacting air decreases. To analyze and solve the thermal problems, a thermal simulator that can estimate temperature is required. There are two aspects of thermal analysis. One is steady state analysis and the other is transient analysis. There are many existing simulators for thermal analysis of 2D-ICs. But there are a few simulators that can analyze 3D-ICs and none of them can perform both steady state and transient analysis while considering TSVs. TSVs made up of copper connect wires on different stacked dies using cylindrical holes through the dies. The copper of the TSVs fills up the cylindrical holes for the connection. As well as connecting wires, TSVs also help dissipating the heat. TSVs commonly connect multiple dies within a package to the spreader and heatsink then they makes it easy to exchange heat. In fact, the thermal conductance of a TSV of copper is higher than that of a chip of silicon. Moreover, since TSVs connect different dies through BEOL(back end of line) and TIM(thermal interface material) layers which blocks heat flow, they help a lot with heat dissipation. As a result there have been many attempts of solving the heat problems with TSVs. This paper presents an approach to the development of a simulator that can analyze both steady state and transient temperatures in 3D ICs with TSVs and shows the effectiveness with some experiments.์ œ1์žฅ ์„œ๋ก  1 ์ œ2์žฅ ๊ด€๋ จ ์—ฐ๊ตฌ 3 ์ œ1์ ˆ Hotspot simulator 3 ์ œ2์ ˆ 3D-ICE 9 ์ œ3์ ˆ 3D-acme 9 ์ œ3์žฅ TSV ๊ตฌํ˜„ 10 ์ œ1์ ˆ TSV์™€ ๊ธฐ์กด ์‹œ๋ฎฌ๋ ˆ์ดํ„ฐ์— ๋Œ€ํ•œ ๊ณ ์ฐฐ 10 ์ œ2์ ˆ TSV ๊ตฌํ˜„ ๋ฐฉ์‹ 10 ์ œ4์žฅ ์‹คํ—˜ ๋ฐฉ์‹ ๋ฐ ๊ฒฐ๊ณผ 20 ์ œ1์ ˆ ์‹คํ—˜ ๋ชฉํ‘œ 20 ์ œ2์ ˆ Steady state ์—ด ๋ถ„์„ 20 ์ œ3์ ˆ Transient ์—ด ๋ถ„์„ 25 ์ œ5์žฅ ๊ฒฐ๋ก ๊ณผ ํ–ฅํ›„ ๊ณผ์ œ 30Maste

    Thermal simulator of 3D-IC with modeling of anisotropic TSV conductance and microchannel entrance effects

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    This paper presents a fast and accurate steady state thermal simulator for heatsink and microfluid-cooled 3D-ICs. This model considers the thermal effect of TSVs at fine-granularity by calculating the anisotropic equivalent thermal conductances of a solid grid cell if TSVs are inserted. Entrance effect of microchannels is also investigated for accurate modeling of microfluidic cooling. The proposed thermal simulator is verified against commercial multiphysics solver COMSOL and compared with Hotspot and 3D-ICE. Simulation results shows that for heatsink cooling, the proposed simulator is as accurate as Hotspot but runs much faster at moderate granularity. For microfluidic cooling, our proposed simulator is much more accurate than 3D-ICE in its estimation of steady state temperature and thermal distribution.Accepted versio

    Temperature-Aware Design and Management for 3D Multi-Core Architectures

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    Vertically-integrated 3D multiprocessors systems-on-chip (3D MPSoCs) provide the means to continue integrating more functionality within a unit area while enhancing manufacturing yields and runtime performance. However, 3D MPSoCs incur amplified thermal challenges that undermine the corresponding reliability. To address these issues, several advanced cooling technologies, alongside temperature-aware design-time optimizations and run-time management schemes have been proposed. In this monograph, we provide an overall survey on the recent advances in temperature-aware 3D MPSoC considerations. We explore the recent advanced cooling strategies, thermal modeling frameworks, design-time optimizations and run-time thermal management schemes that are primarily targeted for 3D MPSoCs. Our aim of proposing this survey is to provide a global perspective, highlighting the advancements and drawbacks on the recent state-of-the-ar

    Power, Energy, and Thermal Management for Clustered Manycores

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    Efficient and effective system-level power, energy, and thermal management are very important issues in modern computing systems, for which clustered architectures with multiple voltage islands are an expected compromise between global and per-core DVFS. In this dissertation, we focus on two of the most relevant problems for such architectures, specifically, optimizing performance under power/thermal constraints, and minimizing energy under performance constraints
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