21,815 research outputs found
Intrinsic hole mobility and trapping in a regio-regular poly(thiophene)
The transport properties of high-performance thin-film transistors (TFT) made
with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The
room-temperature field-effect mobility of the devices varied between 0.004
cm2/V s and 0.1 cm2/V s and was controlled through thermal processing of the
material, which modified the structural order. The transport properties of TFTs
were studied as a function of temperature. The field-effect mobility is
thermally activated in all films at T<200 K and the activation energy depends
on the charge density in the channel. The experimental data is compared to
theoretical models for transport, and we argue that a model based on the
existence of a mobility edge and an exponential distribution of traps provides
the best interpretation of the data. The differences in room-temperature
mobility are attributed to different widths of the shallow localized state
distribution at the edge of the valence band due to structural disorder in the
film. The free carrier mobility of the mobile states in the ordered regions of
the film is the same in all structural modifications and is estimated to be
between 1 and 4 cm2/V s.Comment: 20 pages, 8 figure
Influence of surface chemistry on the electronic properties of graphene related carbon materials
A theoretical study on the influence of organic functional groups on the
electronic properties of graphene related carbon materials was carried out.
Here we report, using density functional theory and tight-binding approach,
that the best candidates for conducting supramolecular devices can be obtained
by engineering the surface chemistry and stacking conformation of these
materials
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