Tunneling Between a Pair of Parallel Hall Droplets

In this paper, we examine interwell tunneling between a pair of fractional quantum Hall liquids in a double quantum well system in a tilted magnetic field. Using a variational Monte Carlo method, we calculate moments of the intra-Landau level tunneling spectrum as a function of in-plane field component $B_{\parallel}$ and interwell spacing $d$. This is done for variety of incompressible states including a pair of $\nu=1/3$ layers ([330]), pair of $\nu=1/5$ layers ([550]), and Halperin's [331] state. The results suggest a technique to extract interwell correlations from the tunneling spectral data.Comment: 21 pages and 8 figures (included), RevTeX, preprint no. UCSDCU

Tunneling Splittings in Mn12-Acetate Single Crystals

A Landau-Zener multi-crossing method has been used to investigate the tunnel splittings in high quality Mn$_{12}$-acetate single crystals in the pure quantum relaxation regime and for fields applied parallel to the magnetic easy axis. With this method several individual tunneling resonances have been studied over a broad range of time scales. The relaxation is found to be non-exponential and a distribution of tunnel splittings is inferred from the data. The distributions suggest that the inhomogeneity in the tunneling rates is due to disorder that produces a non-zero mean value of the average transverse anisotropy, such as in a solvent disorder model. Further, the effect of intermolecular dipolar interaction on the magnetic relaxation has been studied.Comment: Europhysics Letters (in press). 7 pages, including 3 figure

Lateral imaging of the superconducting vortex lattice using Doppler-modulated scanning tunneling microscopy

By spatially mapping the Doppler effect of an in-plane magnetic field on the quasiparticle tunneling spectrum, we have laterally imaged the vortex lattice in superconducting 2H-NbSe2. Cryomagnetic scanning tunneling spectroscopy was performed at 300 mK on the ab-surface oriented parallel to the field H. Conductance images at zero bias show stripe patterns running along H, with the stripe separation varying as H^-0.5. Regions of higher zero-bias conductance show lower gap-edge conductance, consistent with spectral redistribution by spatially-modulated superfluid momentum. Our results are interpreted in terms of the interaction between vortical and screening currents, and demonstrate a general method for probing subsurface vortices.Comment: 3 pages, 3 figures, to appear in Applied Physics Letter

Determination of the critical current density in the d-wave superconductor YBCO under applied magnetic fields by nodal tunneling

We have studied nodal tunneling into YBa2Cu3O7-x (YBCO) films under magnetic fields. The films' orientation was such that the CuO2 planes were perpendicular to the surface with the a and b axis at 450 form the normal. The magnetic field was applied parallel to the surface and perpendicular to the CuO2 planes. The Zero Bias Conductance Peak (ZBCP) characteristic of nodal tunneling splits under the effect of surface currents produced by the applied fields. Measuring this splitting under different field conditions, zero field cooled and field cooled, reveals that these currents have different origins. By comparing the field cooled ZBCP splitting to that taken in decreasing fields we deduce a value of the Bean critical current superfluid velocity, and calculate a Bean critical current density of up to 3*10^7 A/cm2 at low temperatures. This tunneling method for the determination of critical currents under magnetic fields has serious advantages over the conventional one, as it avoids having to make high current contacts to the sample.Comment: 8 pages, 2 figure

Hartree-Fock calculations of a finite inhomogeneous quantum wire

We use the Hartree-Fock method to study an interacting one-dimensional electron system on a finite wire, partially depleted at the center by a smooth potential barrier. A uniform one-Tesla Zeeman field is applied throughout the system. We find that with the increase in the potential barrier, the low density electrons under it go from a non-magnetic state to an antiferromagnetic state, and then to a state with a well-localized spin-aligned region isolated by two antiferromagnetic regions from the high density leads. At this final stage, in response to a continuously increasing barrier potential, the system undergoes a series of abrupt density changes, corresponding to the successive expulsion of a single electron from the spin-aligned region under the barrier. Motivated by the recent momentum-resolved tunneling experiments in a parallel wire geometry, we also compute the momentum resolved tunneling matrix elements. Our calculations suggest that the eigenstates being expelled are spatially localized, consistent with the experimental observations. However, additional mechanisms are needed to account for the experimentally observed large spectral weight at near $k=0$ in the tunneling matrix elements.Comment: 10 pages, 14 figure

Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy

We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model combined with the Keldysh non-equilibrium Green's function method in order to calculate the perpendicular and parallel STT, and TMR in MTJ with the finite bias voltages. The dependences of STT and TMR on the insulator barrier energy are calculated for the semi-infinite half metallic ferromagnetic electrodes. We find that perfect linear relation between the parallel STT and the tunneling current for the wide range of the insulator barrier energy. Furthermore, the TMR also depends on the insulator barrier energy, which contradicts to the Julliere's simple model

Interface roughness effects on transport in tunnel structures

Direct simulations of interface roughness effects on transport properties of tunnel structures are performed using the planar supercell stack method. The method allows for the inclusion of realistic three-dimensional rough interfacial geometries in transport calculations. For double barrier resonant tunneling structures, we used our method to analyze the effect of roughness at each of the four interfaces, and to test for sensitivity of transport properties to island size and height. Our simulations yields the following conclusions: (1) We find that scattering of off-resonance states into on-resonance states provides the dominant contribution to interface roughness assisted tunneling. Analyses of scattering strength sensitivity to interface layer configurations reveals preferential scattering into Delta k parallel to approximate to 2 pi/lambda states, where lambda is the island size. (2) We find that roughness at interfaces adjacent to the quantum well can cause lateral localization of wave functions, which increases with island size and depth. Lateral localization can result in the broadening and shifting of transmission resonances, and the introduction of preferential transmission paths. In structures with wide and tall islands, it is possible to find localization over "islands" as well as localization over "oceans." (3) The leading rough interface is the strongest off-resonance scatterer, while rough interfaces adjacent to quantum well are the strongest on-resonance scatterers. The trailing interface is the weakest scatterer