Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.Comment: 8 pages, 3 figure

Continuous-wave Cascaded-Harmonic Generation and Multi-Photon Raman Lasing in Lithium Niobate Whispering-Gallery Resonators

We report experimental demonstration of continuous-wave cascaded-harmonic generation and Raman lasing in a millimeter-scale lithium niobate whispering-gallery resonator pumped at a telecommunication-compatible infrared wavelength. Intensity enhancement through multiple recirculations in the whispering-gallery resonator and quasi phase-matching through a nonuniform crystal poling enable simultaneous cascaded-harmonic generation up to the fourth-harmonic accompanied by stimulated Raman, two-photon, three-photon, and four-photon Raman scattering corresponding the molecular vibrational wavenumbers 632 cm-1 and 255 cm-1 in z-cut lithium niobate at pump power levels as low as 200mW. We demonstrate simultaneous cascaded-harmonic generation and Raman lasing by observing the spectrum of the scattered light from the resonator and by capturing the image of the decoupled light from the resonator on a color CCD camera

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.Comment: 7 pages, 6 figure

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Controlled tuning of the whispering gallery modes of GaN/InGaN {\mu}-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the {\mu}-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several {\mu}W). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN {\mu}-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices

Naturally-phasematched second harmonic generation in a whispering gallery mode resonator

We demonstrate for the first time natural phase matching for optical frequency doubling in a high-Q whispering gallery mode resonator made of Lithium Niobate. A conversion efficiency of 9% is achieved at 30 micro Watt in-coupled continuous wave pump power. The observed saturation pump power of 3.2 mW is almost two orders of magnitude lower than the state-of-the-art. This suggests an application of our frequency doubler as a source of non-classical light requiring only a low-power pump, which easily can be quantum noise limited. Our theoretical analysis of the three-wave mixing in a whispering gallery mode resonator provides the relative conversion efficiencies for frequency doubling in various modes