Adaptive Latency Insensitive Protocols

Latency-insensitive design copes with excessive delays typical of global wires in current and future IC technologies. It achieves its goal via encapsulation of synchronous logic blocks in wrappers that communicate through a latency-insensitive protocol (LIP) and pipelined interconnects. Previously proposed solutions suffer from an excessive performance penalty in terms of throughput or from a lack of generality. This article presents an adaptive LIP that outperforms previous static implementations, as demonstrated by two relevant cases — a microprocessor and an MPEG encoder — whose components we made insensitive to the latencies of their interconnections through a newly developed wrapper. We also present an informal exposition of the theoretical basis of adaptive LIPs, as well as implementation detail

Study Of The Relationship Between Delta Delay And Adjacent Parallel Wire Length In 45 Nanometer Process Technology

Hierarchical design spans the complete framework of a design flow from Register Transfer Level (RTL), synthesis, place and route, timing closure and various other analyses before sign-off. Finer geometries and increasing interconnect density however have resulted signal integrity becoming the key issue for Deep Sub-Micron design. Post silicon bug due to noise and signal integrity can be prevented and fixed at early stage of the IC design cycle. The purpose of this research is to establish a preventive measurement for adjacent wire that can travel in parallel for 45nm technology. The intention is to ensure that a complex design can be delivered to the market with accurate, fast and trusted analysis and provide sign-off solution. Main approach is to conduct the relationship study between delta delay and adjacent parallel wire in 45 nanometer (nm) process technology and provide a preventive measurement to limit the adjacent wire can travel in parallel. The design is explored thoroughly to study the relationship between delay noise and adjacent parallel wire. The correlation is translated into an equation to estimate the delay noise produced with a certain length of adjacent parallel wire

Using Physical Compilation to Implement a System on Chip Platform

The goal of this thesis was to setup a complete design flow involving physical synthesis. The design chosen for this purpose was a system-on-chip (SoC) platform developed at the University of Tennessee. It involves a Leon Processor with a minimal cache configuration, an AMBA on-chip bus and an Advanced Encryption Standard module which performs decryption. As transistor size has entered the deep submicron level, iterations involved in the design cycle have increased due to the domination of interconnect delays over cell delays. Traditionally, interconnect delay has been estimated through the use of wire-load models. However, since there is no physical placement information, the delay estimation may be ineffective and result in increased iterations. Hence, placement-based synthesis has recently been introduced to provide better interconnect delay estimation. The tool used in this thesis to implement the system-on-chip design using physical synthesis is Synopsys Physical Compiler. The flow has been setup through the use of the Galaxy Reference Flow scripts obtained from Synopsys. As part of the thesis, an analysis of the differences between a physically synthesized design and a logically synthesized one in terms of area and delay is presented

Overcoming the challenges in very deep submicron for area reduction, power reduction and faster design closure

The project is aimed at understanding the existing very deep sub-micron (VDSM) implementation of a digital design, analyzing it from the point of view of power, area and timing and to come up with solutions and strategies to optimize the implementation in terms of power, area and timing. The effort involved, to understand the constraints, reasons and the requirements resulting in the existing implementation of the design. Further, various experiments were carried out to improve the design in various aspects like power, area and timing. The tradeoffs required and the benefits of each of the experiments were contrasted and analyzed. The optimum solutions and strategies which balance the requirements were tried out and published at the end of the report

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

Course grained low power design flow using UPF

Increased system complexity has led to the substitution of the traditional bottom-up design flow by systematic hierarchical design flow. The main motivation behind the evolution of such an approach is the increasing difficulty in hardware realization of complex systems. With decreasing channel lengths, few key problems such as timing closure, design sign-off, routing complexity, signal integrity, and power dissipation arise in the design flows. Specifically, minimizing power dissipation is critical in several high-end processors. In high-end processors, the design complexity contributes to the overall dynamic power while the decreasing transistor size results in static power dissipation. This research aims at optimizing the design flow for power and timing using the unified power format (UPF). UPF provides a strategic format to specify power-aware design information at every stage in the flow. The low power reduction techniques enforced in this research are multi-voltage, multi-threshold voltage (Vth), and power gating with state retention. An inherent design challenge addressed in this research is the choice of power optimization techniques as the flow advances from synthesis to physical design. A top-down digital design flow for a 32 bit MIPS RISC processor has been implemented with and without UPF synthesis flow for 65nm technology. The UPF synthesis is implemented with two voltages, 1.08V and 0.864V (Multi-VDD). Area, power and timing metrics are analyzed for the flows developed. Power savings of about 20 % are achieved in the design flow with \u27multi-threshold\u27 power technique compared to that of the design flow with no low power techniques employed. Similarly, 30 % power savings are achieved in the design flow with the UPF implemented when compared to that of the design flow with \u27multi-threshold\u27 power technique employed. Thus, a cumulative power savings of 42% has been achieved in a complete power efficient design flow (UPF) compared to that of the generic top-down standard flow with no power saving techniques employed. This is substantiated by the low voltage operation of modules in the design, reduction in clock switching power by gating clocks in the design and extensive use of HVT and LVT standard cells for implementation. The UPF synthesis flow saw the worst timing slack and more area when compared to those of the `multi-threshold\u27 or the generic flow. Percentage increase in the area with UPF is approximately 15%; a significant source for this increase being the additional power controlling logic added

Towards Energy-Efficient and Reliable Computing: From Highly-Scaled CMOS Devices to Resistive Memories

The continuous increase in transistor density based on Moore\u27s Law has led us to highly scaled Complementary Metal-Oxide Semiconductor (CMOS) technologies. These transistor-based process technologies offer improved density as well as a reduction in nominal supply voltage. An analysis regarding different aspects of 45nm and 15nm technologies, such as power consumption and cell area to compare these two technologies is proposed on an IEEE 754 Single Precision Floating-Point Unit implementation. Based on the results, using the 15nm technology offers 4-times less energy and 3-fold smaller footprint. New challenges also arise, such as relative proportion of leakage power in standby mode that can be addressed by post-CMOS technologies. Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density. Towards attaining these objectives for practical implementations, various techniques to mitigate the specific reliability challenges associated with STT-MRAM elements are surveyed, classified, and assessed herein. Cost and suitability metrics assessed include the area of nanomagmetic and CMOS components per bit, access time and complexity, Sense Margin (SM), and energy or power consumption costs versus resiliency benefits. In an attempt to further improve the Process Variation (PV) immunity of the Sense Amplifiers (SAs), a new SA has been introduced called Adaptive Sense Amplifier (ASA). ASA can benefit from low Bit Error Rate (BER) and low Energy Delay Product (EDP) by combining the properties of two of the commonly used SAs, Pre-Charge Sense Amplifier (PCSA) and Separated Pre-Charge Sense Amplifier (SPCSA). ASA can operate in either PCSA or SPCSA mode based on the requirements of the circuit such as energy efficiency or reliability. Then, ASA is utilized to propose a novel approach to actually leverage the PV in Non-Volatile Memory (NVM) arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time