117 research outputs found

    Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

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    Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements

    Stochastic memory: memory enhancement due to noise

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    There are certain classes of resistors, capacitors and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here, we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2\mathrm{TiO_2} thin films sandwiched between metallic electrodes, and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.Comment: 5 pages, 4 figure

    Applications of memristors in conventional analogue electronics

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    This dissertation presents the steps employed to activate and utilise analogue memristive devices in conventional analogue circuits and beyond. TiO2 memristors are mainly utilised in this study, and their large variability in operation in between similar devices is identified. A specialised memristor characterisation instrument is designed and built to mitigate this issue and to allow access to large numbers of devices at a time. Its performance is quantified against linear resistors, crossbars of linear resistors, stand-alone memristive elements and crossbars of memristors. This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation. Different ways of achieving analogue resistive switching from any device state are presented. Results of these are used to devise a state-of-art biasing parameter finder which automatically extracts pulsing parameters that induce repeatable analogue resistive switching. IV measurements taken during analogue resistive switching are then utilised to model the internal atomic structure of two devices, via fittings by the Simmons tunnelling barrier model. These reveal that voltage pulses modulate a nano-tunnelling gap along a conical shape. Further retention measurements are performed which reveal that under certain conditions, TiO2 memristors become volatile at short time scales. This volatile behaviour is then implemented into a novel SPICE volatile memristor model. These characterisation methods of solid-state devices allowed for inclusion of TiO2 memristors in practical electronic circuits. Firstly, in the context of large analogue resistive crossbars, a crosspoint reading method is analysed and improved via a 3-step technique. Its scaling performance is then quantified via SPICE simulations. Next, the observed volatile dynamics of memristors are exploited in two separate sequence detectors, with applications in neuromorphic engineering. Finally, the memristor as a programmable resistive weight is exploited to synthesise a memristive programmable gain amplifier and a practical memristive automatic gain control circuit.Open Acces

    A multi-stable memristor and its application in a neural network

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    © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Nowadays, there is a lot of study on memristorbased systems with multistability. However, there is no study on memristor with multistability. This brief constructs a mathematical memristor model with multistability. The origin of the multi-stable dynamics is revealed using standard nonlinear theory as well as circuit and system theory. Moreover, the multi-stable memristor is applied to simulate a synaptic connection in a Hopfield neural network. The memristive neural network successfully generates infinitely many coexisting chaotic attractors unobserved in previous Hopfield-type neural networks. The results are also confirmed in analog circuits based on commercially available electronic elements.Peer reviewe

    Standards for the Characterization of Endurance in Resistive Switching Devices

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    Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products

    Overview of emerging nonvolatile memory technologies

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    Memory and information processing in neuromorphic systems

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    A striking difference between brain-inspired neuromorphic processors and current von Neumann processors architectures is the way in which memory and processing is organized. As Information and Communication Technologies continue to address the need for increased computational power through the increase of cores within a digital processor, neuromorphic engineers and scientists can complement this need by building processor architectures where memory is distributed with the processing. In this paper we present a survey of brain-inspired processor architectures that support models of cortical networks and deep neural networks. These architectures range from serial clocked implementations of multi-neuron systems to massively parallel asynchronous ones and from purely digital systems to mixed analog/digital systems which implement more biological-like models of neurons and synapses together with a suite of adaptation and learning mechanisms analogous to the ones found in biological nervous systems. We describe the advantages of the different approaches being pursued and present the challenges that need to be addressed for building artificial neural processing systems that can display the richness of behaviors seen in biological systems.Comment: Submitted to Proceedings of IEEE, review of recently proposed neuromorphic computing platforms and system
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