Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained

Moderate temperature detector development

The development of (Hg, Cd)Te detectors for 8 to 12 micrometer wavelength regions capable of achieving significantly improved sensitivity at noncryogenic temperatures is discussed

Bandgap-Engineered HgCdTe Infrared Detector Structures for Reduced Cooling Requirements.

State-of-the-art mercury cadmium telluride (HgCdTe) high performance infrared (IR) p-n heterojunction technology remains limited by intrinsic, thermal Auger generation- recombination (G-R) mechanisms which necessitate strict cooling requirements, and challenges related to processing technology, particularly those associated with achieving stable, controllable in situ p-type doping in molecular beam epitaxy (MBE) grown HgCdTe. These limitations motivate the need to firstly, increase device operating temperatures, and secondly, address material processing issues. This work investigates three alternative HgCdTe IR device architectures as proposed solutions: 1) the high operating temperature (HOT) detector, 2) the nBn detector, and 3) the NBnuN detector. The HOT detector is designed to suppress Auger processes, in turn, reducing the detector noise and cryogenic cooling requirements. A simulation study comparing the device behavior and performance metrics of the Auger-suppressed HOT structure to those obtained for the conventional double layer planar heterostructure (DLPH) device predicts the HOT detector can provide a significant advantage over conventional detectors with an increased operating temperature of ~40-50 K for devices with cutoff wavelengths in the range of 5-12 um. In a related study, a series of experiments is conducted to examine arsenic (As) deep diffusion in HgCdTe with the goal of achieving controllable low p-type doping in the HOT absorber layer to reduce Auger G-R processes by increasing minority carrier lifetimes. Furthermore, a unipolar, barrier-integrated nBn detector structure is proposed to address the challenges associated with p-type doping in MBE grown HgCdTe. Numerically simulated performance characteristics of the HgCdTe nBn device predict values similar to comparable DLPH structures for a range of temperatures, motivating the experimental demonstration of mid- and long-wave IR HgCdTe nBn detectors. Fabricated nBn detectors successfully exhibit barrier-influenced current-voltage and photoresponse characteristics, but are limited by perimeter leakage currents which must be resolved in future work. Finally, this work culminates with the simulation study of the novel, hybrid NBnuN structure which addresses both technology limitations by combining the advantages and designs of the Auger-suppressed HOT and unipolar nBn detectors in a single configuration.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91390/1/aitsuno_1.pd

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

We investigate the native point defects in the long-wavelength infrared (LWIR) detector material Hg$_{0.75}$Cd$_{0.25}$Te using a dielectric-dependent hybrid density functional combined with spin-orbit coupling. Characterizing these point defects is essential as they are responsible for intrinsic doping and nonradiative recombination centers in the detector material. The dielectric-dependent hybrid functional allows for an accurate description of the band gap ($E_g$) for Hg$_{1-x}$Cd$_{x}$Te (MCT) over the entire compositional range, a level of accuracy challenging with standard hybrid functionals. Our comprehensive examination of the native point defects confirms that cation vacancies $V_\text{Hg(Cd)}$ are the primary sources of $p$-type conductivity in the LWIR material given their low defect formation energies and the presence of a shallow acceptor level ($-$/0) near the valence-band maximum (VBM). In addition to the shallow acceptor level, the cation vacancies exhibit a deep charge transition level (2$-$/$-$) situated near the midgap, characteristic of nonradiative recombination centers. Our results indicate that Hg interstitial could also be a deep center in the LWIR MCT through a metastable configuration under the Hg-rich growth conditions. While an isolated Te antisite does not show deep levels, the formation of $V_\text{Hg}$-Te$_\text{Hg}$ defect complex introduces a deep acceptor level within the band gap.Comment: 12 pages, 7 figure

Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe

Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at 350-450oC in mercury saturated vapor. Secondary ions mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit we find that the Se diffusion coefficient DSe is about one to two orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. Assuming a Te vacancy based mechanism, the Arrhenius relationship yields an activation energy 1.84eV. Dislocations introduced in HgCdTe materials result in two energy levels, where one is a donor and one is an acceptor. Hydrogenation treatment can effectively neutralize these dislocation defect levels. Both experimental results and theoretical calculation show that the mobility due to dislocation scattering remains constant in the low temperature range (<77K), and increases with temperature between 77K and 150K. Dislocation scattering has little effect on electrical transport properties of HgCdTe with an EPD lower than 107/cm2. Dislocations may have little effect on carrier concentration for semiconductor material with zinc blende structure due to self compensation

Materials processing in space program tasks

Active research areas as of the end of the fiscal year 1982 of the Materials Processing in Space Program, NASA-Office of Space and Terrestrial Applications, involving several NASA centers and other organizations are highlighted to provide an overview of the program scope for managers and scientists in industry, university, and government communities. The program is described as well as its history, strategy and overall goal; the organizational structures and people involved are identified and each research task is described together with a list of recent publications. The tasks are grouped into four categories: crystal growth; solidification of metals, alloys, and composites; fluids, transports, and chemical processes; and ultrahigh vacuum and containerless processing technologies

On Interpixel Capacitive Coupling in Hybridized HgCdTe Arrays: Theory, Characterization and Correction

Hybridization is a process by which detector arrays and read out circuitry can be independently fabricated and then bonded together, typically using indium bumps. This technique allows for the use of exotic detector materials such as HgCdTe for the desired spectral response while benefiting from established and proven silicon CMOS readout structures. However, the introduction of an intermediate layer composed of conductors (indium) and insulators (epoxy) results in a capacitive interconnect between adjacent pixels. This interpixel capacitance (IPC) results in charge collected on one pixel, giving rise to a change in voltage on the output node of adjacent pixels. In imaging arrays, this capacitance manifests itself as a blur, attenuating high spatial frequency information and causing single pixel events to be spread over a local neighborhood. Due to the nature of the electric fields in proximity to the depletion region of the diodes in the detector array, the magnitude of this capacitance changes as the diode depletes. This change in capacitance manifests itself as a change in fractional coupling. This results in a blur kernel that is non-homogeneous both spatially across the array and temporally from exposure to exposure, varying as a function of charge collected in each pixel. This signal dependent behavior invalidates underlying assumptions key for conventional deconvolution/deblurring techniques such as Weiner filtering or Lucy-Richardson deconvolution. As such, these techniques cannot be relied upon to restore scientific accuracy and appropriately solve this inverse problem. This dissertation uses first principle physics simulations to elucidate the mechanisms of IPC, establishes a data processing technique which allows for characterization of IPC, formalizes and implements a nonlinear deconvolution method by which the effects of IPC can be mitigated, and examines the impact that IPC can have on scientific conclusions if left uncorrected

Microgravity Science and Applications Program tasks, 1986 revision

The Microgravity Science and Applications (MSA) program is directed toward research in the science and technology of processing materials under conditions of low gravity to provide a detailed examination of the constraints imposed by gravitational forces on Earth. The program is expected to lead to the development of new materials and processes in commercial applications adding to this nation's technological base. The research studies emphasize the selected materials and processes that will best elucidate the limitations due to gravity and demonstrate the enhanced sensitivity of control of processes that may be provided by the weightless environment of space. Primary effort is devoted to a study of the specific areas of research which reveals potential value in the initial investigations of the previous decades. Examples of previous process research include crystal growth and directional solidification of metals; containerless processing of reactive materials; synthesis and separation of biological materials; etc. Additional efforts will be devoted to identifying the special requirements which drive the design of hardware to reduce risk in future developments

Spacelab Science Results Study

Beginning with OSTA-1 in November 1981 and ending with Neurolab in March 1998, a total of 36 Shuttle missions carried various Spacelab components such as the Spacelab module, pallet, instrument pointing system, or mission peculiar experiment support structure. The experiments carried out during these flights included astrophysics, solar physics, plasma physics, atmospheric science, Earth observations, and a wide range of microgravity experiments in life sciences, biotechnology, materials science, and fluid physics which includes combustion and critical point phenomena. In all, some 764 experiments were conducted by investigators from the U.S., Europe, and Japan. The purpose of this Spacelab Science Results Study is to document the contributions made in each of the major research areas by giving a brief synopsis of the more significant experiments and an extensive list of the publications that were produced. We have also endeavored to show how these results impacted the existing body of knowledge, where they have spawned new fields, and if appropriate, where the knowledge they produced has been applied