Micromachined vibratory gyroscopes controlled by a high order band-pass sigma delta modulator.

Abstract—This work reports on the design of novel closed-loop control systems for the sense mode of a vibratory-rate gyroscope based on a high-order sigma-delta modulator (SDM). A low-pass and two distinctive bandpass topologies are derived, and their advantages discussed. So far, most closed-loop force-feedback control systems for these sensors were based on low-pass SDM’s. Usually, the sensing element of a vibratory gyroscope is designed with a high quality factor to increase the sensitivity and, hence, can be treated as a mechanical resonator. Furthermore, the output characteristic of vibratory rate gyroscopes is narrowband amplitude- modulated signal. Therefore, a bandpass M is a more appropriate control strategy for a vibratory gyroscope than a low-pass SDM. Using a high-order bandpass SDM, the control system can adopt a much lower sampling frequency compared with a low-pass SDM while achieving a similar noise floor for a given oversampling ratio (OSR). In addition, a control system based on a high-order bandpass SDM is superior as it not only greatly shapes the quantization noise, but also alleviates tonal behavior, as is often seen in low-order SDM control systems, and has good immunities to fabrication tolerances and parameter mismatch. These properties are investigated in this study at system level

A design tool for high-resolution high-frequency cascade continuous- time Σ∆ modulators

Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, SpainThis paper introduces a CAD methodology to assist the de signer in the implementation of continuous-time (CT) cas- cade Σ∆ modulators. The salient features of this methodology ar e: (a) flexible behavioral modeling for optimum accuracy- efficiency trade-offs at different stages of the top-down synthesis process; (b) direct synthesis in the continuous-time domain for minimum circuit complexity and sensitivity; a nd (c) mixed knowledge-based and optimization-based architec- tural exploration and specification transmission for enhanced circuit performance. The applicability of this methodology will be illustrated via the design of a 12 bit 20 MHz CT Σ∆ modulator in a 1.2V 130nm CMOS technology.Ministerio de Ciencia y Educación TEC2004-01752/MICMinisterio de Industria, Turismo y Comercio FIT-330100-2006-134 SPIRIT Projec

HTS pulse-stretcher and second order modulator: design and first results

One of the remaining challenges in the application of superconducting electronics is the interfacing between superconducting and semiconducting environments. The voltage and speed mismatch between RSFQ pulses and semiconducting read-out electronics makes it necessary to amplify as well as stretch the RSFQ pulses. Moreover, circuits based on HTS (High Temperature Superconductor) technology are very attractive since they can operate under considerably relaxed cooling effort, which is one of the main problems with LTS (Low Temperature Superconductor) circuits. Within the European project SuperADC, a HTS second order sigma delta modulator and a pulse stretcher, used as an interface between the modulator and the first semi-conducting amplifier stage, have been designed at Twente University and will be presented here

Design of a Continuous-Time (CT) Sigma-Delta modulator for class D audio power amplifiers

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadore

A Control-Bounded Quadrature Leapfrog ADC

In this paper, the design flexibility of the control-bounded analog-to-digital converter principle is demonstrated. A band-pass analog-to-digital converter is considered as an application and case study. We show how a low-pass control-bounded analog-to-digital converter can be translated into a band-pass version where the guaranteed stability, converter bandwidth, and signal-to-noise ratio are preserved while the center frequency for conversion can be positioned freely. The proposed converter is validated with behavioral simulations on several filter orders, center frequencies, and oversampling ratios. Additionally, we consider an op-amp circuit realization where the effects of first-order op-amp non-idealities are shown. Finally, robustness against component variations is demonstrated by Monte Carlo simulations.Comment: 13 pages and 16 figure

Global design of analog cells using statistical optimization techniques

We present a methodology for automated sizing of analog cells using statistical optimization in a simulation based approach. This methodology enables us to design complex analog cells from scratch within reasonable CPU time. Three different specification types are covered: strong constraints on the electrical performance of the cells, weak constraints on this performance, and design objectives. A mathematical cost function is proposed and a bunch of heuristics is given to increase accuracy and reduce CPU time to minimize the cost function. A technique is also presented to yield designs with reduced variability in the performance parameters, under random variations of the transistor technological parameters. Several CMOS analog cells with complexity levels up to 48 transistors are designed for illustration. Measurements from fabricated prototypes demonstrate the suitability of the proposed methodology

Integrated temperature sensors in deep sub-micron CMOS technologies

textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin