1 research outputs found
Technological Solution beyond MOSFET and Binary Logic Device
Title from PDF of title page viewed January 31, 2019Thesis advisor: Masud ChowdhuryVitaIncludes bibliographical references (pages 64-70)Thesis (M.S.)--School of Computing and Engineering, University of Missouri--Kansas City, 2018Today’s technology is based on the binary number system-based circuitry, which
is the outcome of the simple on and off switching mechanism of the prevailing transistors.
Consideration of higher radix number system can eradicate or lessen many limitations of
binary number system such as the saturation of Moore’s law. The most substantial potential
benefits of higher radix approaches are the decrease of wiring complexity. Excessive
scaling of the technologies has led the researchers beyond Binary Logic and MOSFET
technology.
TFET considered as one of the most promising options for low-power application
for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier
mobility, tunable bandgap and its outstanding electrostatic control of device gate becomes
ideal choice for channel material of TFET. This paper proposes double gated ultra-thin
body (UTB) TFET device model using Graphene nano ribbon as the channel material. In
this paper evaluation of the model by performing the comparative analysis with InAs as
the channel material in terms of Ec-Ev on and off state and Id-Vg characteristics is
presented.
The feasibility of multi valued logic system in real-world rests on two serious
aspects, such as, the easiness of mathematical approach for implementing the multivalued
logic into today’s technology and the sufficiency of synthesis techniques. In this paper, we
have focused on the different technology available for implementing multivalued logic
especially ternary logic. Ternary logic devices are expected to lead to an exponential
increase of the information handling capability, which binary logic cannot support.
Memory capacitor or memcapacitor is an emerging device that exhibits hysteresis
behavior, which can be manipulated by external parameters, such as, the applied electric
field or voltage. One of the unique properties of the memcapacitor is that by using the
percolation approach, we can achieve Metal-Insulator-Transition (MIT) phenomenon,
which can be utilized to obtain a staggered hysteresis loop. For multivalued logic devices
staggered hysteresis behavior is the critical requirement. In this paper, we propose a new
conceptual design of a ternary logic device by vertically stacking dielectric material
interleaved with layers of graphene nanoribbon (GNR) between two external metal plates.
The proposed device structure displays the memcapacitive behavior with the fast switching
metal-to-insulator transition in picosecond scale. The device model is later extended into a
vertical-cascaded version, which acts as a ternary device.Introduction -- Multi valued logic -- Overview of different MVL technologies -- Graphene memcapacitor based ternary logic device -- Graphene nano ribbon based TFET -- Conclusion and future wor