Observation of macroscopic Landau-Zener transitions in a superconducting device

A two-level system traversing a level anticrossing has a small probability to make a so-called Landau-Zener (LZ) transition between its energy bands, in deviation from simple adiabatic evolution. This effect takes on renewed relevance due to the observation of quantum coherence in superconducting qubits (macroscopic "Schrodinger cat" devices). We report an observation of LZ transitions in an Al three-junction qubit coupled to a Nb resonant tank circuit.Comment: REVTeX4, 4pp., 4 EPS figures. v2: clarifications added; final, to appear in EP

Development and test of resistive superconducting fault current limiter; acting time and its recovery conditions

Resistive-type of superconducting fault current limiters (RSFCL) have been developed for medium voltage class aiming to operate at 1 MVA power capacity and short time recovery (< 2 s). A RSFCL in form of superconducting modular device was designed and constructed using 50 m-length of YBCO coated conductor tapes for operation under 1 kV / 1 kA and acting time of 0.1 s. In order to increase the acting time the RSFCL was combined with an air-core reactor in parallel to increase the fault limiting time up to 1 s. The tests determined the electrical and thermal characteristics of the combined resistive/ inductive protection unit. The combined fault current limiter reached a limiting current of 583 A, corresponding to a limiting factor of 3.3 times within an acting time of up to 1 s

Proposal for an optical laser producing light at half the Josephson frequency

We describe a superconducting device capable of producing laser light in the visible range at half of the Josephson generation frequency with the optical phase of the light locked to the superconducting phase difference. It consists of two single-level quantum dots embedded into a p-n semiconducting heterostructure and surrounded by a cavity supporting a resonant optical mode. We study decoherence and spontaneous switching in the device.Comment: 4+3 pages, 3+1 figure

The effect of charge fluctuation on a normal-superconducting-normal single-electron transistor

We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the Coulomb blockade regime for even state is larger than that for odd state. We show that large energy correction in the former regime caused by charge fluctuation can be explained by considering the charging energy renormalization.Comment: 4 pages, 3 figures, prepared for Proccedings of International Symposium on Superconducting Device Physics (SDP 2001

Spin Injection and Detection in Magnetic Nanostructures

We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling regime. This enables us to discuss recent controversy on spin injection and detection experiments. Extending the result to a superconducting device, we find that the spin accumulation signal is strongly enhanced by opening of the superconducting gap since a gapped superconductor is a low carrier system for spin transport but not for charge. The enhancement is also expected in semiconductor devices.Comment: 4 pages, 3 figure

Quantum computation in decoherence-free subspace with superconducting devices

We propose a scheme to implement quantum computation in decoherence-free subspace with superconducting devices inside a cavity by unconventional geometric manipulation. Universal single-qubit gates in encoded qubit can be achieved with cavity assisted interaction. A measurement-based two-qubit Controlled-Not gate is produced with parity measurements assisted by an auxiliary superconducting device and followed by prescribed single-qubit gates. The measurement of currents on two parallel devices can realize a projective measurement, which is equivalent to the parity measurement on the involved devices.Comment: v2: thoroughly rewritten version with title and motivation changed; v3: published version with detail dirivation