80,286 research outputs found
Raman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe2
Transition metal dichalcogenide MoTe is an important candidate for
realizing the newly predicted type-IIWeyl fermions, for which the breaking of
the inversion symmetry is a prerequisite. Here we present direct spectroscopic
evidence for the inversion symmetry breaking in the low temperature phase of
MoTe by systematic Raman experiments and first principles calculations. We
identify five lattice vibrational modes which are Raman active only in
noncentrosymmetric structure at low temperature. A hysteresis is also observed
in the peak intensity of inversion symmetry activated Raman modes, confirming a
temperature induced structural phase transition with a concomitant change in
the inversion symmetry. Our results provide definitive evidence for the low
temperature noncentrosymmetric T phase from vibrational spectroscopy, and
suggest MoTe as an ideal candidate for investigating the temperature
induced topological phase transition
High-pressure Raman study on the superconducting pyrochlore oxide Cd2Re2O7
The superconducting pyrochlore oxide Cd2Re2O7 (Tc = 1 K), which is now
considered as a candidate of the spin-orbit-coupled metal, shows an
inversion-symmetry-breaking structural transition at Ts1 = 200 K. Ts1 decreases
with increasing pressure and disappears at around Pc = 4:2GPa, where at least
four high-pressure phases with tiny structural distortions are suggested by
means of powder X-ray diffraction [Yamaura PRB 2017]. We have carried out Raman
scattering experiments to investigate changes in the crystal symmetry under
high pressures up to 4.8 GPa. A structural transition at 1.9-3.0 GPa and the
recovery of inversion symmetry above Pc are observed at 12 K
Janus monolayers of transition metal dichalcogenides.
Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements
Inverse Spin Hall Effect and Anomalous Hall Effect in a Two-Dimensional Electron Gas
We study the coupled dynamics of spin and charge currents in a
two-dimensional electron gas in the transport diffusive regime. For systems
with inversion symmetry there are established relations between the spin Hall
effect, the anomalous Hall effect and the inverse spin Hall effect. However, in
two-dimensional electron gases of semiconductors like GaAs, inversion symmetry
is broken so that the standard arguments do not apply. We demonstrate that in
the presence of a Rashba type of spin-orbit coupling (broken structural
inversion symmetry) the anomalous Hall effect, the spin Hall and inverse spin
Hall effect are substantially different effects. Furthermore we discuss the
inverse spin Hall effect for a two-dimensional electron gas with Rashba and
Dresselhaus spin-orbit coupling; our results agree with a recent experiment.Comment: 5 page
Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
Methods to generate spin-polarised electronic states in non-magnetic solids
are strongly desired to enable all-electrical manipulation of electron spins
for new quantum devices. This is generally accepted to require breaking global
structural inversion symmetry. In contrast, here we present direct evidence
from spin- and angle-resolved photoemission spectroscopy for a strong spin
polarisation of bulk states in the centrosymmetric transition-metal
dichalcogenide WSe. We show how this arises due to a lack of inversion
symmetry in constituent structural units of the bulk crystal where the
electronic states are localised, leading to enormous spin splittings up to
eV, with a spin texture that is strongly modulated in both real and
momentum space. As well as providing the first experimental evidence for a
recently-predicted `hidden' spin polarisation in inversion-symmetric materials,
our study sheds new light on a putative spin-valley coupling in
transition-metal dichalcogenides, of key importance for using these compounds
in proposed valleytronic devices.Comment: 6 pages, 4 figure
First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure
In this article, we report emergence of topological phase in XMR material
TmSb under hydrostatic pressure using first principles calculations. We find
that TmSb, a topologically trivial semimetal, undergoes a topological phase
transition with band inversion at X point without breaking any symmetry under a
hydrostatic pressure of 12 GPa. At 15 GPa, it again becomes topologically
trivial with band inversion at as well as X point. We find that the
pressures corresponding to the topological phase transitions are far below the
pressure corresponding to structural phase transition at 25.5 GPa. The
reentrant behaviour of topological quantum phase with hydrostatic pressure
would help in finding a correlation between topology and XMR effect through
experiments.Comment: 12 pages, 4 figure
New Symmetries in Crystals and Handed Structures
For over a century, the structure of materials has been described by a
combination of rotations, rotation-inversions and translational symmetries. By
recognizing the reversal of static structural rotations between clockwise and
counterclockwise directions as a distinct symmetry operation, here we show that
there are many more structural symmetries than are currently recognized in
right- or left-handed handed helices, spirals, and in antidistorted structures
composed equally of rotations of both handedness. For example, though a helix
or spiral cannot possess conventional mirror or inversion symmetries, they can
possess them in combination with the rotation reversal symmetry. Similarly, we
show that many antidistorted perovskites possess twice the number of symmetry
elements as conventionally identified. These new symmetries predict new forms
for "roto" properties that relate to static rotations, such as rotoelectricity,
piezorotation, and rotomagnetism. They also enable symmetry-based search for
new phenomena, such as multiferroicity involving a coupling of spins, electric
polarization and static rotations. This work is relevant to structure-property
relationships in all material structures with static rotations such as
minerals, polymers, proteins, and engineered structures.Comment: 15 Pages, 4 figures, 3 Tables; Fig. 2b has error
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