Spin-drag relaxation time in one-dimensional spin-polarized Fermi gases

Spin propagation in systems of one-dimensional interacting fermions at finite temperature is intrinsically diffusive. The spreading rate of a spin packet is controlled by a transport coefficient termed "spin drag" relaxation time $\tau_{\rm sd}$. In this paper we present both numerical and analytical calculations of $\tau_{\rm sd}$ for a two-component spin-polarized cold Fermi gas trapped inside a tight atomic waveguide. At low temperatures we find an activation law for $\tau_{\rm sd}$, in agreement with earlier calculations of Coulomb drag between slightly asymmetric quantum wires, but with a different and much stronger temperature dependence of the prefactor. Our results provide a fundamental input for microscopic time-dependent spin-density functional theory calculations of spin transport in 1D inhomogeneous systems of interacting fermions.Comment: 7 pages, 5 figure

Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by reversing the sign of the exchange interaction. By performing quantum transport calculations in disordered systems, the chirality and resilience of the valley-polarized edge state are demonstrated. Our findings provide a promising route to engineer a topological phase that could enable low-power electronic devices and valleytronic applications.Comment: Final published version. PRB letter: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.L16111

Influence of Nuclear Spin Polarization on Quantum Wire Conductance

In this work, we study a possibility to measure the transverse and longitudinal relaxation times of a collection of polarized nuclear spins located in the region of a quantum wire via its conductance. The interplay of an external in-plane magnetic field, spin-orbit interaction, and the changing field of the spin-polarized nuclei cause the conductance of the quantum wire to evolve in time. We show that it is possible to extract the transverse and longitudinal relaxation times of the spin-polarized nuclei from the time dependence of the conductance.Comment: Presented at the 2004 IEEE NTC Quantum Device Technology Worksho

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Spintronic Spin Accumulation and Thermodynamics

The spin degree of freedom can play an essential role in determining the electrical transport properties of spin-polarized electron systems in metals or semiconductors. In this article, I address the dependence of spin-subsystem chemical potentials on accumulated spin-densities. I discuss both approaches which can be used to measure this fundamental thermodynamic quantity and the microscopic physics which determines its value in several different systems.Comment: 14 pages, 4 figures. Based on lecture given at the XVI Sitges Conference, June 1999. Proceedings to be published by Springer-Verla