Measuring thickness in thin NbN films for superconducting devices

We present the use of a commercially available fixed-angle multi-wavelength ellipsometer for quickly measuring the thickness of NbN thin films for the fabrication and performance improvement of superconducting nanowire single photon detectors. The process can determine the optical constants of absorbing thin films, removing the need for inaccurate approximations. The tool can be used to observe oxidation growth and allows thickness measurements to be integrated into the characterization of various fabrication processes

Dynamic Response of a fast near infra-red Mueller matrix ellipsometer

The dynamic response of a near infrared Ferroelectric Liquid Crystal based Mueller matrix ellipsometer (NIR FLC-MME) is presented. A time dependent simulation model, using the measured time response of the individual FLCs, is used to describe the measured temporal response. Furthermore, the impulse response of the detector and the pre-amplifier is characterized and included in the simulation model. The measured time-dependent intensity response of the MME is reproduced in simulations, and it is concluded that the switching time of the FLCs is the limiting factor for the Mueller matrix measurement time of the FLC-based MME. Based on measurements and simulations our FLC based NIR-MME system is estimated to operate at the maximum speed of approximately 16 ms per Mueller matrix measurement. The FLC-MME may be operated several times faster, since the switching time of the crystals depends on the individual crystal being switched, and to what state it is switched. As a demonstration, the measured temporal response of the Mueller matrix and the retardance of a thick liquid crystal variable retarder upon changing state is demonstrated.Comment: to be published in Journal of Modern Optics 20 pages, 6 figure

ROTATING OR ROTATABLE COMPENSATOR SYSTEMI PROVIDING ABERATION CORRECTED ELECTROMAGNETIC RAADATION TO A SPOT ON A SAMPLE AT MULTIPLE ANGLES OF ANCIDENCE

The present invention relates to ellipsometer systems, and more particularly to ellipsometer systems comprising trans missive rotating or stepwise rotatable compensators for continuously or step-wise varying polarization states and further comprising transmissive multi-element lens focusing of a spectroscopic electromagnetic beam into a small, chromatically relatively undispersed area spot on a sample system. The ellipsometer system optionally is present in an environmental control chamber

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure \alpha-Ti, through an \alpha-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices

Semiconductor technology program: Progress briefs

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon

Optical anisotropy of Ge(001)

The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface