Single Value Devices

We live in a world of continuous information overflow, but the quality of information and communication is suffering. Single value devices contribute to the information and communication quality by fo- cussing on one explicit, relevant piece of information. The information is decoupled from a computer and represented in an object, integrates into daily life. However, most existing single value devices come from conceptual experiments or art and exist only as prototypes. In order to get to mature products and to design meaningful, effective and work- ing objects, an integral perspective on the design choices is necessary. Our contribution is a critical exploration of the design space of single value devices. In a survey we give an overview of existing examples. The characterizing design criteria for single value devices are elaborated in a taxonomy. Finally, we discuss several design choices that are specifically important for moving from prototypes to commercializable products

Single value devices

Ein Single Value Device ist ein physisches Objekt in unserer alltäglichen Umgebung, das genau eine Art von Information oder Mitteilung anzeigt. Dabei kann es sich um den Gemütszustand der Großmutter handeln, um das Wetter am Urlaubsort oder um die Zeit, die zum Frühstücken bleibt, bevor man bei der aktuellen Verkehrslage zur Arbeit aufbrechen muss. Der Fokus auf persönlich relevante Informationen bildet dabei einen Gegensatz zum Informationsüberfluss im Internet. Die Anzeige durch das physische Objekt kommt unseren kognitiven Fähigkeiten entgegen. Beide Faktoren tragen dabei zur sogenannten calm technology1 bei, die der Beruhigung und Bewältigung dieser Informationsflut dienen soll. Die individuellen Bedeutungen, die der Form und dem Inhalt der Objekte zugeschrieben werden können, sind wichtig für die Effektivität von Single Value Devices. Wir stellen hier die Frage, welche Möglichkeiten Designerinnen und Designer haben, Single Value Devices so zu entwerfen, dass Benutzerinnen und Benutzer die Möglichkeit bekommen, diesen Objekten persönliche Bedeutungen zu geben und sie auf diese Weise als Schnittstellen einzusetzen

Shot Noise in Graphene

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.Comment: related papers available at http://marcuslab.harvard.ed

1/f noise in graphene

We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier concentration of single-layer sheet devices has a behavior characterized by a shape going from the M to the Gamma type as the material inhomogeneity increases, whereas the shape becomes of V type in bilayer sheet devices for any inhomogeneity, or of M type at high carrier concentration. In single-layer nanoribbons, instead, the ratio of noise to resistance versus the latter quantity is approximately constant, whereas in the bilayer case it exhibits a linear decrease on a logarithmic scale as resistance increases and its limit for zero resistance equals the single-layer value. Noise at the Dirac point is much greater in single-layer than in bilayer devices and it increases with temperature. The origin of 1/f noise is attributed to the traps in the device and to their relaxation time dispersion. The coupling of trap charge fluctuations with the electrode current is computed according to the electrokinematics theorem, by taking into account their opposite effects on electrons and holes as well as the device inhomogeneities. The results agree well with experiments.Comment: 27 pages, 5 figures. The final publication is available at link.springer.co

Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.Comment: Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issu

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into heater/absorber area and narrow n- and p-doped beams, which operate as the thermocouple. The electro-thermal characterization of the devices reveal noise equivalent power of 13 pW/rtHz and thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The bolometers operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.Comment: 11 pages, 3 figure

Analytical Modeling of a Novel High-\u3cem\u3eQ\u3c/em\u3e Disk Resonator for Liquid-Phase Applications

To overcome the detrimental effects of liquid environments on microelectromechanical systems resonator performance, the in-fluid vibration of a novel disk resonator supported by two electrothermally driven legs is investigated through analytical modeling and the effects of the system’s geometric/material parameters on the dynamic response are explored. The all-shear interaction device (ASID) is based on engaging the surrounding fluid primarily through shearing action. The theory comprises a continuous-system, multimodal model, and a single-degree-of-freedom model, the latter yielding simple formulas for the fundamental-mode resonant characteristics that often furnish excellent estimates to the results based on the more general model. Comparisons between theoretical predictions and previously published liquid-phase quality factor (Q) data (silicon devices in heptane) show that the theoretical results capture the observed trends and also give very good quantitative estimates, particularly for the highest Q devices. Moreover, the highest Q value measured in the earlier study (304) corresponded to a specimen whose disk radius-to-thickness ratio was 2.5, a value that compares well with the optimal value of 2.3 predicted by the present model. The insight furnished by the proposed theory is expected to lead to further improvements in ASID design to achieve unprecedented levels of performance for a wide variety of liquid-phase resonator applications