Design and analysis of SRAMs for energy harvesting systems

PhD ThesisAt present, the battery is employed as a power source for wide varieties of microelectronic systems ranging from biomedical implants and sensor net-works to portable devices. However, the battery has several limitations and incurs many challenges for the majority of these systems. For instance, the design considerations of implantable devices concern about the battery from two aspects, the toxic materials it contains and its lifetime since replacing the battery means a surgical operation. Another challenge appears in wire-less sensor networks, where hundreds or thousands of nodes are scattered around the monitored environment and the battery of each node should be maintained and replaced regularly, nonetheless, the batteries in these nodes do not all run out at the same time. Since the introduction of portable systems, the area of low power designs has witnessed extensive research, driven by the industrial needs, towards the aim of extending the lives of batteries. Coincidentally, the continuing innovations in the field of micro-generators made their outputs in the same range of several portable applications. This overlap creates a clear oppor-tunity to develop new generations of electronic systems that can be powered, or at least augmented, by energy harvesters. Such self-powered systems benefit applications where maintaining and replacing batteries are impossi-ble, inconvenient, costly, or hazardous, in addition to decreasing the adverse effects the battery has on the environment. The main goal of this research study is to investigate energy harvesting aware design techniques for computational logic in order to enable the capa- II bility of working under non-deterministic energy sources. As a case study, the research concentrates on a vital part of all computational loads, SRAM, which occupies more than 90% of the chip area according to the ITRS re-ports. Essentially, this research conducted experiments to find out the design met-ric of an SRAM that is the most vulnerable to unpredictable energy sources, which has been confirmed to be the timing. Accordingly, the study proposed a truly self-timed SRAM that is realized based on complete handshaking protocols in the 6T bit-cell regulated by a fully Speed Independent (SI) tim-ing circuitry. The study proved the functionality of the proposed design in real silicon. Finally, the project enhanced other performance metrics of the self-timed SRAM concentrating on the bit-line length and the minimum operational voltage by employing several additional design techniques.Umm Al-Qura University, the Ministry of Higher Education in the Kingdom of Saudi Arabia, and the Saudi Cultural Burea

Ultra low-power fault-tolerant SRAM design in 90nm CMOS technology

With the increment of mobile, biomedical and space applications, digital systems with low-power consumption are required. As a main part in digital systems, low-power memories are especially desired. Reducing the power supply voltages to sub-threshold region is one of the effective approaches for ultra low-power applications. However, the reduced Static Noise Margin (SNM) of Static Random Access Memory (SRAM) imposes great challenges to the subthreshold SRAM design. The conventional 6-transistor SRAM cell does not function properly at sub-threshold supply voltage range because it has no enough noise margin for reliable operation. In order to achieve ultra low-power at sub-threshold operation, previous research work has demonstrated that the read and write decoupled scheme is a good solution to the reduced SNM problem. A Dual Interlocked Storage Cell (DICE) based SRAM cell was proposed to eliminate the drawback of conventional DICE cell during read operation. This cell can mitigate the singleevent effects, improve the stability and also maintain the low-power characteristic of subthreshold SRAM, In order to make the proposed SRAM cell work under different power supply voltages from 0.3 V to 0.6 V, an improved replica sense scheme was applied to produce a reference control signal, with which the optimal read time could be achieved. In this thesis, a 2K ~8 bits SRAM test chip was designed, simulated and fabricated in 90nm CMOS technology provided by ST Microelectronics. Simulation results suggest that the operating frequency at VDD = 0.3 V is up to 4.7 MHz with power dissipation 6.0 ƒÊW, while it is 45.5 MHz at VDD = 0.6 V dissipating 140 ƒÊW. However, the area occupied by a single cell is larger than that by conventional SRAM due to additional transistors used. The main contribution of this thesis project is that we proposed a new design that could simultaneously solve the ultra low-power and radiation-tolerance problem in large capacity memory design

Always-On 674uW @ 4GOP/s Error Resilient Binary Neural Networks with Aggressive SRAM Voltage Scaling on a 22nm IoT End-Node

Binary Neural Networks (BNNs) have been shown to be robust to random bit-level noise, making aggressive voltage scaling attractive as a power-saving technique for both logic and SRAMs. In this work, we introduce the first fully programmable IoT end-node system-on-chip (SoC) capable of executing software-defined, hardware-accelerated BNNs at ultra-low voltage. Our SoC exploits a hybrid memory scheme where error-vulnerable SRAMs are complemented by reliable standard-cell memories to safely store critical data under aggressive voltage scaling. On a prototype in 22nm FDX technology, we demonstrate that both the logic and SRAM voltage can be dropped to 0.5Vwithout any accuracy penalty on a BNN trained for the CIFAR-10 dataset, improving energy efficiency by 2.2X w.r.t. nominal conditions. Furthermore, we show that the supply voltage can be dropped to 0.42V (50% of nominal) while keeping more than99% of the nominal accuracy (with a bit error rate ~1/1000). In this operating point, our prototype performs 4Gop/s (15.4Inference/s on the CIFAR-10 dataset) by computing up to 13binary ops per pJ, achieving 22.8 Inference/s/mW while keeping within a peak power envelope of 674uW - low enough to enable always-on operation in ultra-low power smart cameras, long-lifetime environmental sensors, and insect-sized pico-drones.Comment: Submitted to ISICAS2020 journal special issu

ULTRALOW-POWER, LOW-VOLTAGE DIGITAL CIRCUITS FOR BIOMEDICAL SENSOR NODES

Ph.DDOCTOR OF PHILOSOPH

Microarchitectural Low-Power Design Techniques for Embedded Microprocessors

With the omnipresence of embedded processing in all forms of electronics today, there is a strong trend towards wireless, battery-powered, portable embedded systems which have to operate under stringent energy constraints. Consequently, low power consumption and high energy efficiency have emerged as the two key criteria for embedded microprocessor design. In this thesis we present a range of microarchitectural low-power design techniques which enable the increase of performance for embedded microprocessors and/or the reduction of energy consumption, e.g., through voltage scaling. In the context of cryptographic applications, we explore the effectiveness of instruction set extensions (ISEs) for a range of different cryptographic hash functions (SHA-3 candidates) on a 16-bit microcontroller architecture (PIC24). Specifically, we demonstrate the effectiveness of light-weight ISEs based on lookup table integration and microcoded instructions using finite state machines for operand and address generation. On-node processing in autonomous wireless sensor node devices requires deeply embedded cores with extremely low power consumption. To address this need, we present TamaRISC, a custom-designed ISA with a corresponding ultra-low-power microarchitecture implementation. The TamaRISC architecture is employed in conjunction with an ISE and standard cell memories to design a sub-threshold capable processor system targeted at compressed sensing applications. We furthermore employ TamaRISC in a hybrid SIMD/MIMD multi-core architecture targeted at moderate to high processing requirements (> 1 MOPS). A range of different microarchitectural techniques for efficient memory organization are presented. Specifically, we introduce a configurable data memory mapping technique for private and shared access, as well as instruction broadcast together with synchronized code execution based on checkpointing. We then study an inherent suboptimality due to the worst-case design principle in synchronous circuits, and introduce the concept of dynamic timing margins. We show that dynamic timing margins exist in microprocessor circuits, and that these margins are to a large extent state-dependent and that they are correlated to the sequences of instruction types which are executed within the processor pipeline. To perform this analysis we propose a circuit/processor characterization flow and tool called dynamic timing analysis. Moreover, this flow is employed in order to devise a high-level instruction set simulation environment for impact-evaluation of timing errors on application performance. The presented approach improves the state of the art significantly in terms of simulation accuracy through the use of statistical fault injection. The dynamic timing margins in microprocessors are then systematically exploited for throughput improvements or energy reductions via our proposed instruction-based dynamic clock adjustment (DCA) technique. To this end, we introduce a 6-stage 32-bit microprocessor with cycle-by-cycle DCA. Besides a comprehensive design flow and simulation environment for evaluation of the DCA approach, we additionally present a silicon prototype of a DCA-enabled OpenRISC microarchitecture fabricated in 28 nm FD-SOI CMOS. The test chip includes a suitable clock generation unit which allows for cycle-by-cycle DCA over a wide range with fine granularity at frequencies exceeding 1 GHz. Measurement results of speedups and power reductions are provided

Circuit design for embedded memory in low-power integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 141-152).This thesis explores the challenges for integrating embedded static random access memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration with every new semiconductor generation. Techniques to speed up the statistical analysis of physical memory designs by a factor of 100 to 10,000 relative to the conventional Monte Carlo Method are developed. The proposed methods build upon the Importance Sampling simulation algorithm and efficiently explore the sample space of transistor parameter fluctuation. Process variation in SRAM at low-voltage is further investigated experimentally with a 512kb 8T SRAM test chip in 45nm SOI CMOS technology. For active operation, an AC coupled sense amplifier and regenerative global bitline scheme are designed to operate at the limit of on current and off current separation on a single-ended SRAM bitline. The SRAM operates from 1.2 V down to 0.57 V with access times from 400ps to 3.4ns. For standby power, a data retention voltage sensor predicts the mismatch-limited minimum supply voltage without corrupting the contents of the memory. The leakage power of SRAM forces the chip designer to seek non-volatile memory in applications such as portable electronics that retain significant quantities of data over long durations. In this scenario, the energy cost of accessing data must be minimized. This thesis presents a ferroelectric random access memory (FRAM) prototype that addresses the challenges of sensing diminishingly small charge under conditions favorable to low access energy with a time-to-digital sensing scheme. The 1 Mb IT1C FRAM fabricated in 130 nm CMOS operates from 1.5 V to 1.0 V with corresponding access energy from 19.2 pJ to 9.8 pJ per bit. Finally, the computational state of sequential elements interspersed in CMOS logic, also restricts the ability to power gate. To enable simple and fast turn-on, ferroelectric capacitors are integrated into the design of a standard cell register, whose non-volatile operation is made compatible with the digital design flow. A test-case circuit containing ferroelectric registers exhibits non-volatile operation and consumes less than 1.3 pJ per bit of state information and less than 10 clock cycles to save or restore with no minimum standby power requirement in-between active periods.by Masood Qazi.Ph.D

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Energy autonomous systems : future trends in devices, technology, and systems

The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications

Modeling and Mitigation of Soft Errors in Nanoscale SRAMs

Energetic particle (alpha particle, cosmic neutron, etc.) induced single event data upset or soft error has emerged as a key reliability concern in SRAMs in sub-100 nanometre technologies. Low operating voltage, small node capacitance, high packing density, and lack of error masking mechanisms are primarily responsible for the soft error susceptibility of SRAMs. In addition, since SRAM occupies the majority of die area in system-on-chips (SoCs) and microprocessors, different leakage reduction techniques, such as, supply voltage reduction, gated grounding, etc., are applied to SRAMs in order to limit the overall chip leakage. These leakage reduction techniques exponentially increase the soft error rate in SRAMs. The soft error rate is further accentuated by process variations, which are prominent in scaled-down technologies. In this research, we address these concerns and propose techniques to characterize and mitigate soft errors in nanoscale SRAMs. We develop a comprehensive analytical model of the critical charge, which is a key to assessing the soft error susceptibility of SRAMs. The model is based on the dynamic behaviour of the cell and a simple decoupling technique for the non-linearly coupled storage nodes. The model describes the critical charge in terms of NMOS and PMOS transistor parameters, cell supply voltage, and noise current parameters. Consequently, it enables characterizing the spread of critical charge due to process induced variations in these parameters and to manufacturing defects, such as, resistive contacts or vias. In addition, the model can estimate the improvement in critical charge when MIM capacitors are added to the cell in order to improve the soft error robustness. The model is validated by SPICE simulations (90nm CMOS) and radiation test. The critical charge calculated by the model is in good agreement with SPICE simulations with a maximum discrepancy of less than 5%. The soft error rate estimated by the model for low voltage (sub 0.8 V) operations is within 10% of the soft error rate measured in the radiation test. Therefore, the model can serve as a reliable alternative to time consuming SPICE simulations for optimizing the critical charge and hence the soft error rate at the design stage. In order to limit the soft error rate further, we propose an area-efficient multiword based error correction code (MECC) scheme. The MECC scheme combines four 32 bit data words to form a composite 128 bit ECC word and uses an optimized 4-input transmission-gate XOR logic. Thus MECC significantly reduces the area overhead for check-bit storage and the delay penalty for error correction. In addition, MECC interleaves two composite words in a row for limiting cosmic neutron induced multi-bit errors. The ground potentials of the composite words are controlled to minimize leakage power without compromising the read data stability. However, use of composite words involves a unique write operation where one data word is written while other three data words are read to update the check-bits. A power efficient word line signaling technique is developed to facilitate the write operation. A 64 kb SRAM macro with MECC is designed and fabricated in a commercial 90nm CMOS technology. Measurement results show that the SRAM consumes 534 μW at 100 MHz with a data latency of 3.3 ns for a single bit error correction. This translates into 82% per-bit energy saving and 8x speed improvement over recently reported multiword ECC schemes. Accelerated neutron radiation test carried out at TRIUMF in Vancouver confirms that the proposed MECC scheme can correct up to 85% of soft errors

Near Data Processing for Efficient and Trusted Systems

We live in a world which constantly produces data at a rate which only increases with time. Conventional processor architectures fail to process this abundant data in an efficient manner as they expend significant energy in instruction processing and moving data over deep memory hierarchies. Furthermore, to process large amounts of data in a cost effective manner, there is increased demand for remote computation. While cloud service providers have come up with innovative solutions to cater to this increased demand, the security concerns users feel for their data remains a strong impediment to their wide scale adoption. An exciting technique in our repertoire to deal with these challenges is near-data processing. Near-data processing (NDP) is a data-centric paradigm which moves computation to where data resides. This dissertation exploits NDP to both process the data deluge we face efficiently and design low-overhead secure hardware designs. To this end, we first propose Compute Caches, a novel NDP technique. Simple augmentations to underlying SRAM design enable caches to perform commonly used operations. In-place computation in caches not only avoids excessive data movement over memory hierarchy, but also significantly reduces instruction processing energy as independent sub-units inside caches perform computation in parallel. Compute Caches significantly improve the performance and reduce energy expended for a suite of data intensive applications. Second, this dissertation identifies security advantages of NDP. While memory bus side channel has received much attention, a low-overhead hardware design which defends against it remains elusive. We observe that smart memory, memory with compute capability, can dramatically simplify this problem. To exploit this observation, we propose InvisiMem which uses the logic layer in the smart memory to implement cryptographic primitives, which aid in addressing memory bus side channel efficiently. Our solutions obviate the need for expensive constructs like Oblivious RAM (ORAM) and Merkle trees, and have one to two orders of magnitude lower overheads for performance, space, energy, and memory bandwidth, compared to prior solutions. This dissertation also addresses a related vulnerability of page fault side channel in which the Operating System (OS) induces page faults to learn application's address trace and deduces application secrets from it. To tackle it, we propose Sanctuary which obfuscates page fault channel while allowing the OS to manage memory as a resource. To do so, we design a novel construct, Oblivious Page Management (OPAM) which is derived from ORAM but is customized for page management context. We employ near-memory page moves to reduce OPAM overhead and also propose a novel memory partition to reduce OPAM transactions required. For a suite of cloud applications which process sensitive data we show that page fault channel can be tackled at reasonable overheads.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/144139/1/shaizeen_1.pd