17,227 research outputs found
Simulation of hot carriers in semiconductor devices
Includes bibliographical references (p. 109-113).Supported by the U.S. Navy. N00174-93-C-0035Khalid Rahmat
Simulation of hot carriers in semiconductor devices
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.Includes bibliographical references (p. 109-113).by Khalid Rahmat.Ph.D
Simulation of nanostructure-based high-efficiency solar cells: challenges, existing approaches and future directions
Many advanced concepts for high-efficiency photovoltaic devices exploit the
peculiar optoelectronic properties of semiconductor nanostructures such as
quantum wells, wires and dots. While the optics of such devices is only
modestly affected due to the small size of the structures, the optical
transitions and electronic transport can strongly deviate from the simple bulk
picture known from conventional solar cell devices. This review article
discusses the challenges for an adequate theoretical description of the
photovoltaic device operation arising from the introduction of nanostructure
absorber and/or conductor components and gives an overview of existing device
simulation approaches.Comment: Invited paper, accepted for publication in IEEE Journal of Selected
Topics in Quantum Electronic
Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Green's function formalism
This article reviews the application of the non-equilibrium Green's function
formalism to the simulation of novel photovoltaic devices utilizing quantum
confinement effects in low dimensional absorber structures. It covers
well-known aspects of the fundamental NEGF theory for a system of interacting
electrons, photons and phonons with relevance for the simulation of
optoelectronic devices and introduces at the same time new approaches to the
theoretical description of the elementary processes of photovoltaic device
operation, such as photogeneration via coherent excitonic absorption,
phonon-mediated indirect optical transitions or non-radiative recombination via
defect states. While the description of the theoretical framework is kept as
general as possible, two specific prototypical quantum photovoltaic devices, a
single quantum well photodiode and a silicon-oxide based superlattice absorber,
are used to illustrated the kind of unique insight that numerical simulations
based on the theory are able to provide.Comment: 20 pages, 10 figures; invited review pape
Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold
We evaluate the limiting efficiency of full and partial solar spectrum
harvesting via the process of internal photoemission in Au-semiconductor
Schottky junctions. Our results based on the ab initio calculations of the
electron density of states (e-DOS) reveal that the limiting efficiency of the
full-spectrum Au converter based on hot electron injection is below 4%. This
value is even lower than previously established limit based on the parabolic
approximation of the Au electron energy bands. However, we predict limiting
efficiency exceeding 10% for the hot holes collection through the Schottky
junction between Au and p-type semiconductor. Furthermore, we demonstrate that
such converters have more potential if used as a part of the hybrid system for
harvesting high- and low-energy photons of the solar spectrum.Comment: Proc. SPIE 9608, Infrared Remote Sensing and Instrumentation XXIII,
960816 (September 1, 2015) 7 pages, 4 figure
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