Benchmarking, Research, Development, and Support for ORNL Automated Image and Signature Retrieval (AIR/ASR) Technologies

This report describes the results of a Cooperative Research and Development Agreement (CRADA) with Applied Materials, Inc. (AMAT) of Santa Clara, California. This project encompassed the continued development and integration of the ORNL Automated Image Retrieval (AIR) technology, and an extension of the technology denoted Automated Signature Retrieval (ASR), and other related technologies with the Defect Source Identification (DSI) software system that was under development by AMAT at the time this work was performed. In the semiconductor manufacturing environment, defect imagery is used to diagnose problems in the manufacturing line, train yield management engineers, and examine historical data for trends. Image management in semiconductor data systems is a growing cause of concern in the industry as fabricators are now collecting up to 20,000 images each week. In response to this concern, researchers at the Oak Ridge National Laboratory (ORNL) developed a semiconductor-specific content-based image retrieval method and system, also known as AIR. The system uses an image-based query-by-example method to locate and retrieve similar imagery from a database of digital imagery using visual image characteristics. The query method is based on a unique architecture that takes advantage of the statistical, morphological, and structural characteristics of image data, generated by inspection equipment in industrial applications. The system improves the manufacturing process by allowing rapid access to historical records of similar events so that errant process equipment can be isolated and corrective actions can be quickly taken to improve yield. The combined ORNL and AMAT technology is referred to hereafter as DSI-AIR and DSI-ASR

Fabrication and nanoroughness characterization of specific nanostructures and nanodevice

Nanoroughness is becoming a very important specification for many nanostructures and nanodevices, and its metrology impacts not only the nanodevice properties of interest, but also its material selection and process development. This Ph.D. thesis presents an investigation into fabrication and nanoroughness characterization of nanoscale specimens and MIS (metal-insulator-semiconductor) capacitors with 2 HfO as a high k dielectric. Self-affine curves and Gaussian, non-Gaussian, self-affine as well as complicated rough surfaces were characterized and simulated. The effects of characteristic parameters on the CD (critical dimension) variation and the properties of these rough surfaces were visualized. Compared with experimental investigations, these simulations are flexible, low cost and highly efficient. Relevant conclusions were frequently employed in subsequent investigations. A proposal regarding the thicknesses of the deposited films represented by nominal linewidths and pitch was put forward. The MBE (Molecular Beam Epitaxy) process was introduced and AlGaAs and GaAs were selected to fabricate nanolinewidth and nanopitch specimens on GaAs substrate with nominal linewidths of 2nm, 4nm, 6nm and 8nm, and a nominal pitch of 5nm. HRTEM (High Resolution Transmission Electron Microscopy) image-based characterization of LER/LWR (Line Edge Roughness/Line Width Roughness) in real space and frequency domains demonstrated that the MBE-based process was capable of fabricating the desired nanolinewidth and nanopitch specimens and could be regulated accordingly. MIS capacitors with 2 HfO film as high k dielectric were fabricated, and SEM (Scanning Electron Microscope) image-based nanoroughness characterization, along with measurement of the MIS capacitor electrical properties were performed. It was concluded that the annealing temperature of the deposited 2 HfO film was an important process parameter and 700℃ was an optimal temperature to improve the properties of the MIS capacitor. Also, by quantitative characterization of the relevant nanoroughness, the fabrication process can be further regulated. The uncertainty propagation model of SEM based nanoroughness measurement was presented according to specific requirements of the relevant standards, ISO GPS (Geometric Product Specifications and Verification) and GUM (Guide to the Expression of Uncertainty in Measurement), and the method for implementating uncertainties was evaluated. The case study demonstrated that the total standard uncertainty of the nanoroughness measurement was 0.13nm, while its expanded uncertainty with the coverage factor k as 3 was 0.39nm. They are indispensable parts of LER/LWR measurement results

Laboratory Directed Research and Development Program FY 2005 Annual Report

The Oak Ridge National Laboratory (ORNL) Laboratory Directed Research and Development (LDRD) Program reports its status to the U.S. Department of Energy (DOE) in March of each year. The program operates under the authority of DOE Order 413.2A, 'Laboratory Directed Research and Development' (January 8, 2001), which establishes DOE's requirements for the program while providing the Laboratory Director broad flexibility for program implementation. LDRD funds are obtained through a charge to all Laboratory programs. This report describes all ORNL LDRD research activities supported during FY 2005 and includes final reports for completed projects and shorter progress reports for projects that were active, but not completed, during this period. The FY 2005 ORNL LDRD Self-Assessment (ORNL/PPA-2006/2) provides financial data about the FY 2005 projects and an internal evaluation of the program's management process. ORNL is a DOE multiprogram science, technology, and energy laboratory with distinctive capabilities in materials science and engineering, neutron science and technology, energy production and end-use technologies, biological and environmental science, and scientific computing. With these capabilities ORNL conducts basic and applied research and development (R&D) to support DOE's overarching national security mission, which encompasses science, energy resources, environmental quality, and national nuclear security. As a national resource, the Laboratory also applies its capabilities and skills to the specific needs of other federal agencies and customers through the DOE Work For Others (WFO) program. Information about the Laboratory and its programs is available on the Internet at <http://www. ornl.gov/>. LDRD is a relatively small but vital DOE program that allows ORNL, as well as other multiprogram DOE laboratories, to select a limited number of R&D projects for the purpose of: (1) maintaining the scientific and technical vitality of the Laboratory; (2) enhancing the Laboratory's ability to address future DOE missions; (3) fostering creativity and stimulating exploration of forefront science and technology; (4) serving as a proving ground for new research; and (5) supporting high-risk, potentially high-value R&D. Through LDRD the Laboratory is able to improve its distinctive capabilities and enhance its ability to conduct cutting-edge R&D for its DOE and WFO sponsors. To meet the LDRD objectives and fulfill the particular needs of the Laboratory, ORNL has established a program with two components: the Director's R&D Fund and the Seed Money Fund. As outlined in Table 1, these two funds are complementary. The Director's R&D Fund develops new capabilities in support of the Laboratory initiatives, while the Seed Money Fund is open to all innovative ideas that have the potential for enhancing the Laboratory's core scientific and technical competencies. Provision for multiple routes of access to ORNL LDRD funds maximizes the likelihood that novel and seminal ideas with scientific and technological merit will be recognized and supported

Semiconductor Sidewall Shape Estimation

We present modifications to a feature-based, image-retrieval approach for estimating semiconductor sidewall (crosssection) shapes using top-down images. The top-down images are acquired by a critical dimension scanning electron microscope (CD-SEM). The proposed system is based upon earlier work with several modifications. First, we use only line-edge, as opposed to full-line, sub-images from the top-down images. Secondly, Gabor filter features are introduced to replace some of the previously computed features. Finally, a new dimensionality reduction algorithm – direct, weighted linear discriminant analysis (DW-LDA) – is developed to replace the previous two-step principal component analysis plus LDA method. Results of the modified system are presented for data collected across several line widths, line spacings, and CD-SEM tools. Keywords: CD-SEM metrology, semiconductor inspection, lithography, linear discriminant analysis (LDA) 1. BACKGROUND In current fabrication environments, line-width measurements in semiconductor lithography are made almost exclusively using scanning electron microscope (SEM) images. This process – known as critical dimension SEM (CD-SEM) metrology – employs images that are usually acquired in a top-down configuration, i.e., looking down onto the semiconductor line feature. According to the International Technology Roadmap for Semiconductors, continually shrinking line-widths mak