The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/{\mu}m) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.Comment: 9 pages, 7 figures, 1 tabl

Self-repairing in single-walled carbon nanotubes by heat treatment

Structure transformation by heat treatment in single-walled carbon nanotubes (SWCNT) is investigated using molecular dynamics simulation. The critical temperature for the collapse of pure SWCNT is as high as 4655 K due to strong covalent carbon-carbon bonding. Above 2000 K, the cross section of SWCNT changes from circle to ellipse. The self-repairing capability is then investigated and two efficient processes are observed for the SWCNT to repair themselves. (1) In the first mechanism, vacancy defects aggregate to form a bigger hole, and a bottleneck junction is constructed nearby. (2) In the second mechanism, a local curvature is generated around the isolate vacancy to smooth the SWCNT. Benefit from the powerful self-repairing capability, defective SWCNT can seek a stable configuration at high temperatures; thus the critical temperature for collapse is insensitive to the vacancy defect density.Comment: accepted by Journal of Applied Physic

Low temperature fullerene encapsulation in single wall carbon nanotubes: synthesis of N@C60_{60}@SWCNT

High filling of single wall carbon nanotubes (SWCNT) with C$_{60}$ and C$_{70}$ fullerenes in solvent is reported at temperatures as low as 69 $^{o}$C. A 2 hour long refluxing in n-hexane of the mixture of the fullerene and SWCNT results in a high yield of C$_{60}$,C$_{70}$@SWCNT, fullerene peapod, material. The peapod filling is characterized by TEM, Raman and electron energy loss spectroscopy and X-ray scattering. We applied the method to synthesize the temperature sensitive (N@C$_{60}$:C$_{60}$)@SWCNT as proved by electron spin resonance spectroscopy. The solvent prepared peapod samples can be transformed to double walled nanotubes enabling a high yield and industrially scalable production of DWCNT

Migration of a Carbon Adatom on a Charged Single-Walled Carbon Nanotube

We find that negative charges on an armchair single-walled carbon nanotube (SWCNT) can significantly enhance the migration of a carbon adatom on the external surfaces of SWCNTs, along the direction of the tube axis. Nanotube charging results in stronger binding of adatoms to SWCNTs and consequent longer lifetimes of adatoms before desorption, which in turn increases their migration distance several orders of magnitude. These results support the hypothesis of diffusion enhanced SWCNT growth in the volume of arc plasma. This process could enhance effective carbon flux to the metal catalyst

Giant Electron-hole Charging Energy Asymmetry in Ultra-short Carbon Nanotubes

Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT transistors which display a large electron-hole transport asymmetry. The devices consist of naked SWCNT channels contacted with sections of SWCNT-under-annealed-gold. The annealed gold acts as an n-doping top gate which creates nm-sharp barriers at the junctions between the contacts and naked channel. These tunnel barriers define a single quantum dot (QD) whose charging energies to add an electron or a hole are vastly different ($e-h$ charging energy asymmetry). We parameterize the $e-h$ transport asymmetry by the ratio of the hole and electron charging energies $\eta_{e-h}$. We show that this asymmetry is maximized for short channels and small band gap SWCNTs. In a small band gap SWCNT device, we demonstrate the fabrication of a two-in-one quantum device acting as a QD for holes, and a much longer quantum bus for electrons. In a 14 nm long channel, $\eta_{e-h}$ reaches up to 2.6 for a device with a band gap of 270 meV. This strong $e-h$ transport asymmetry survives even at room temperature