Two- and Three-dimensional High Performance, Patterned Overlay Multi-chip Module Technology

A two- and three-dimensional multi-chip module technology was developed in response to the continuum in demand for increased performance in electronic systems, as well as the desire to reduce the size, weight, and power of space systems. Though developed to satisfy the needs of military programs, such as the Strategic Defense Initiative Organization, the technology, referred to as High Density Interconnect, can also be advantageously exploited for a wide variety of commercial applications, ranging from computer workstations to instrumentation and microwave telecommunications. The robustness of the technology, as well as its high performance, make this generality in application possible. More encouraging is the possibility of this technology for achieving low cost through high volume usage

Modeling and analysis of semiconductor manufacturing processes using petri nets

This thesis addresses the issues in modeling and analysis of multichip module (MCM) manufacturing processes using Petri nets. Building such graphical and mathematical models is a crucial step to understand MCM technologies and to enhance their application scope. In this thesis, the application of Petri nets is presented with top-down and bottom-up approaches. The theory of Petri nets is summarized with its basic notations and properties at first. After that, the capability of calculating and analyzing Petri nets with deterministic timing information is extended to meet the requirements of the MCM models. Then, using top-down refining and system decomposition, MCM models are built from an abstract point to concrete systems with timing information. In this process, reduction theory based on a multiple-input-single-output modules for deterministic Petri nets is applied to analyze the cycle time of Petri net models. Besides, this thesis is of significance in its use of the reduction theory which is derived for timed marked graphs - an important class of Petri nets

Glass multilayer bonding for high density interconnect substrates

The aim of this research was the investigation of bonding borosilicate glass sheets, its trade mark CMZ, 100μm thickness, to create multilayer substrates capable of supporting high-density electrical interconnections. CMZ glass was chosen as it has a coefficient of thermal expansion that is close to that of silicon, thereby minimising thermal stresses in assemblies generated by manufacturing processes or service conditions. Two different methods of bonding the glass were used in this study; pressure assisted low temperature bonding (PALTB), and water glass bonding, using Sodium Trisilicate (Na2Si3O7) solution. These two bonding methods have already been applied in electronics manufacturing applications, such as silicon wafer bonding and multichip modules (MCMs). However, glass-to-glass bonding is a relatively new subject and this study is an attempt to standardise bonding processes. Additionally, the concept of using glass as a multilayer substrate provides a foundation for further exploration by other investigators. Initial tests that were carried out before standardising the procedures for these two methods showed that a two-stage bonding process provided optimum results. A preliminary stage commenced by placing the cleaned (using Decon 90 solution) samples in a vacuum oven for 15 minutes, then heating at 100oC for 1hr. The permanent stage was then achieved by heating the samples in a conventional oven at temperatures from 200 to 400oC, for different periods. At this stage, the main difference between the two methods was the application of pressure (1-2MPa) during heating of the PALTB samples. To evaluate the quality of the bonds, qualitative tests such as visual, optical microscope and dye penetrant were used. In addition, to estimate the strength and the rigidity of the interlayer bonds, two quantitative tests, comprising of deflection under cyclic stresses and crack opening were used. Thermal cycling and humidity tests were also used to assess resistance of the bonds to environmental effects. The results showed that heating to 100oC was insufficient to enhance the bonds, as occasionally a sudden increase of deflection was observed indicating slippage/delamination. These bonds were enhanced during the permanent bonding stage by heating to 300oC in PALTB, under a pressure of 1-2MPa. The crack-opening test showed that the delamination distances of the bonds in the permanent stage were lower than that for preliminary bonding in both bonding methods. The delamination distances from the crack opening tests were used to calculate the strain energy release rate (GIC) and fracture toughness (KIC) values of the interlayers. The results showed that the KIC values of the permanent PALTB and water glass interlayers were higher than 1MPa.m0.5, while the KIC value of the CMZ glass, determined by linear elastic fracture mechanics, was around 0.8MPa.m0.5. The optical observations revealed that the prepared bonded sheets did not delaminate or break after thermal cycling and humidity tests

Integrated sensors for process monitoring and health monitoring in microsystems

This thesis presents the development of integrated sensors for health monitoring in Microsystems, which is an emerging method for early diagnostics of status or “health” of electronic systems and devices under operation based on embedded tests. Thin film meander temperature sensors have been designed with a minimum footprint of 240 m × 250 m. A microsensor array has been used successfully for accurate temperature monitoring of laser assisted polymer bonding for MEMS packaging. Using a frame-shaped beam, the temperature at centre of bottom substrate was obtained to be ~50 ºC lower than that obtained using a top-hat beam. This is highly beneficial for packaging of temperature sensitive MEMS devices. Polymer based surface acoustic wave humidity sensors were designed and successfully fabricated on 128° cut lithium niobate substrates. Based on reflection signals, a sensitivity of 0.26 dB/RH% was achieved between 8.6 %RH and 90.6 %RH. Fabricated piezoresistive pressure sensors have also been hybrid integrated and electrically contacted using a wire bonding method. Integrated sensors based on both LiNbO3 and ZnO/Si substrates are proposed. Integrated sensors were successfully fabricated on a LiNbO3 substrate with a footprint of 13 mm × 12 mm, having multi monitoring functions for simultaneous temperature, measurement of humidity and pressure in the health monitoring applications

Development and Packaging of Microsystems Using Foundry Services

Micro-electro-mechanical systems (MEMS) are a new and rapidly growing field of research. Several advances to the MEMS state of the art were achieved through design and characterization of novel devices. Empirical and theoretical model of polysilicon thermal actuators were developed to understand their behavior. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10(exp -3)/K. The sheet resistance of the MUMPs polysilicon layers was found to be dependent on linewidth due to presence or absence of lateral phosphorus diffusion. The functional integration of MEMS with CMOS was demonstrated through the design of automated positioning and assembly systems, and a new power averaging scheme was devised. Packaging of MEMS using foundry multichip modules (MCMs) was shown to be a feasible approach to physical integration of MEMS with microelectronics. MEMS test die were packaged using Micro Module Systems MCM-D and General Electric High Density Intercounect and Chip-on-Flex MCM foundries. Xenon difluoride (XeF2) was found to be an excellent post-packaging etchant for bulk micromachined MEMS. For surface micromachining, hydrofluoric acid (HF) can be used

Advanced information processing system for advanced launch system: Hardware technology survey and projections

The major goals of this effort are as follows: (1) to examine technology insertion options to optimize Advanced Information Processing System (AIPS) performance in the Advanced Launch System (ALS) environment; (2) to examine the AIPS concepts to ensure that valuable new technologies are not excluded from the AIPS/ALS implementations; (3) to examine advanced microprocessors applicable to AIPS/ALS, (4) to examine radiation hardening technologies applicable to AIPS/ALS; (5) to reach conclusions on AIPS hardware building blocks implementation technologies; and (6) reach conclusions on appropriate architectural improvements. The hardware building blocks are the Fault-Tolerant Processor, the Input/Output Sequencers (IOS), and the Intercomputer Interface Sequencers (ICIS)

Overcoming the Challenges for Multichip Integration: A Wireless Interconnect Approach

The physical limitations in the area, power density, and yield restrict the scalability of the single-chip multicore system to a relatively small number of cores. Instead of having a large chip, aggregating multiple smaller chips can overcome these physical limitations. Combining multiple dies can be done either by stacking vertically or by placing side-by-side on the same substrate within a single package. However, in order to be widely accepted, both multichip integration techniques need to overcome significant challenges. In the horizontally integrated multichip system, traditional inter-chip I/O does not scale well with technology scaling due to limitations of the pitch. Moreover, to transfer data between cores or memory components from one chip to another, state-of-the-art inter-chip communication over wireline channels require data signals to travel from internal nets to the peripheral I/O ports and then get routed over the inter-chip channels to the I/O port of the destination chip. Following this, the data is finally routed from the I/O to internal nets of the target chip over a wireline interconnect fabric. This multi-hop communication increases energy consumption while decreasing data bandwidth in a multichip system. On the other hand, in vertically integrated multichip system, the high power density resulting from the placement of computational components on top of each other aggravates the thermal issues of the chip leading to degraded performance and reduced reliability. Liquid cooling through microfluidic channels can provide cooling capabilities required for effective management of chip temperatures in vertical integration. However, to reduce the mechanical stresses and at the same time, to ensure temperature uniformity and adequate cooling competencies, the height and width of the microchannels need to be increased. This limits the area available to route Through-Silicon-Vias (TSVs) across the cooling layers and make the co-existence and co-design of TSVs and microchannels extreamly challenging. Research in recent years has demonstrated that on-chip and off-chip wireless interconnects are capable of establishing radio communications within as well as between multiple chips. The primary goal of this dissertation is to propose design principals targeting both horizontally and vertically integrated multichip system to provide high bandwidth, low latency, and energy efficient data communication by utilizing mm-wave wireless interconnects. The proposed solution has two parts: the first part proposes design methodology of a seamless hybrid wired and wireless interconnection network for the horizontally integrated multichip system to enable direct chip-to-chip communication between internal cores. Whereas the second part proposes a Wireless Network-on-Chip (WiNoC) architecture for the vertically integrated multichip system to realize data communication across interlayer microfluidic coolers eliminating the need to place and route signal TSVs through the cooling layers. The integration of wireless interconnect will significantly reduce the complexity of the co-design of TSV based interconnects and microchannel based interlayer cooling. Finally, this dissertation presents a combined trade-off evaluation of such wireless integration system in both horizontal and vertical sense and provides future directions for the design of the multichip system

Massive Data-Centric Parallelism in the Chiplet Era

Traditionally, massively parallel applications are executed on distributed systems, where computing nodes are distant enough that the parallelization schemes must minimize communication and synchronization to achieve scalability. Mapping communication-intensive workloads to distributed systems requires complicated problem partitioning and dataset pre-processing. With the current AI-driven trend of having thousands of interconnected processors per chip, there is an opportunity to re-think these communication-bottlenecked workloads. This bottleneck often arises from data structure traversals, which cause irregular memory accesses and poor cache locality. Recent works have introduced task-based parallelization schemes to accelerate graph traversal and other sparse workloads. Data structure traversals are split into tasks and pipelined across processing units (PUs). Dalorex demonstrated the highest scalability (up to thousands of PUs on a single chip) by having the entire dataset on-chip, scattered across PUs, and executing the tasks at the PU where the data is local. However, it also raised questions on how to scale to larger datasets when all the memory is on chip, and at what cost. To address these challenges, we propose a scalable architecture composed of a grid of Data-Centric Reconfigurable Array (DCRA) chiplets. Package-time reconfiguration enables creating chip products that optimize for different target metrics, such as time-to-solution, energy, or cost, while software reconfigurations avoid network saturation when scaling to millions of PUs across many chip packages. We evaluate six applications and four datasets, with several configurations and memory technologies, to provide a detailed analysis of the performance, power, and cost of data-local execution at scale. Our parallelization of Breadth-First-Search with RMAT-26 across a million PUs reaches 3323 GTEPS

Materials for high-density electronic packaging and interconnection

Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production