Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Radiation Resistant Silicon Semiconductor Devices-Patent

Improving radiation resistance of silicon semiconductor junctions by doping with lithiu

Method of making a silicon semiconductor device Patent

Doping silicon material with gadolinium to increase radiation resistance of solar cell

Collisionless reconnection using Alfvén wave radiation resistance

Patchy magnetic reconnection involves transient field-aligned current filaments. The spatial localization, transient time-dependence, and orientation of these current filaments means they must radiate torsional Alfvén waves. Radiation of wave energy does not come for free—it must load the current which acts as the radiative source. This loading (radiation resistance) is proposed as the energy sink required for collisionless magnetic reconnection to proceed. Radiation resistance for both inertial and kinetic Alfvén waves is calculated and, for highly collisionless plasmas, is shown to exceed by a substantial factor both Spitzer resistivity and the effective resistance due to the direct acceleration of electrons (inertial loading). The radiation resistivity is shown to provide the magnetic field diffusivity required for magnetic fields to diffuse across the assumed width of the current filament on the time scale of the reconnection. It is also shown that Landau damping of the radiated waves results in the generation of energetic, field-aligned particles: in the beta << me/mi regime the energetic particles are electrons while in the me/mi << beta << 1 regime, the energetic particles are ions

The Radiation Resistance of a Dipole in a Uniaxial Medium Scientific Report No. 7

Radiation resistance of dipole antenna in lossy uniaxial mediu

The radiation resistance of cylindrical shells

Radiation resistance of cylindrical shells in ideal compressible acoustic mediu

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance

Relationships between cell population kinetics and radiation resistance in pocket mice /Heteromyidae - Perognathus/

Relationships between cell population kinetics and radiation resistance in pocket mic