276 research outputs found

    Development and Characterisation of Radiation Monitoring Sensors for the High Energy Physics Experiments of the CERN LHC Accelerator

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    The Radiation monitoring at the High Energy Physic experiments of the LHC, the next CERN particle accelerator, will be a challenge for the existing dosimetry technologies. The radiation environment generated by the high-energy proton collisions will be complex reaching locally very high levels. The measurement of the energy deposition, in the IEL and NIEL channels, for semiconductor materials will therefore help to insure the reliability of the electronic systems during the LHC operation. In this work, the qualification of RadFET and p-i-n diode dosimeters, suitable for the measurements in the LHC radiation field, is presented. A series of two RadFETs and two p-i-n diodes have been then selected and characterized in detail in view of their installation at the LHC. Sensors integration issues, supported by Monte Carlo simulations studies, are also presented. Finally, the applicability of OSL materials for the dosimetry of the mixed fields at the LHC has been also discussed here

    The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

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    The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150°C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150°C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also. [Projekat Ministarstva nauke Republike Srbije, br. 17007

    REXUS 2 - The first Eurolaunch Project

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    Sounding rocket and balloon launches have been conducted since more than 30 years at Swedish Space Corporation (SSC), ESRANGE. MORABA, the Mobile Rocket Base of the German Aerospace Center (DLR), has planned and performed sounding rocket and balloon launches throughout the world since the late sixties. With the creation of EuroLaunch, the long-lasting co-operation of the two complementary technical centres ESRANGE and MORABA is being enhanced and intensified. The REXUS 2 student rocket was the first project to be designed, built and launched under the EuroLaunch cooperation. A driving force in research by means of sounding rockets, has been the German Aerospace Center, which through its Mobile Rocket Base team, has conducted launches and operations all over the world. The Swedish Space Corporation and the German Aerospace Center have now entered into a deeper relationship by establishing a joint co-operation called EuroLaunch. On December 8th, 2003, a co-operation agreement was signed at ESRANGE. The agreement will strengthen the long-lasting and ongoing relationship between SSC and DLR within the area of sub-orbital services for upper atmosphere and microgravity research as well as future fields of research interest. EuroLaunch is currently involved in several projects which aim at strengthening the co-operation and also providing new possibilities to the scientific communities. The first EuroLaunch project was the REXUS 2 student rocket, which was successfully launched on October 28th, 2004 at ESRANGE. Within the REXUS 2 project the flexible work sharing of EuroLaunch has been put to its first test, as personnel from the two organisations have supported each other during heavy workload periods

    Distributed Radiation Monitoring System for Linear Accelerators based on CAN Bus

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    Abstract—Gamma and neutron radiation is produced during the normal operation of linear accelerators like Free-Electron Laser in Hamburg (FLASH) or X-ray Free Electron Laser (X-FEL). Gamma radiation cause general degeneration of electronics devices and neutron fluence can be a reason of soft error in memories and microcontrollers. X-FEL accelerator will be built only in one tunnel, therefore most of electronic control systems will be placed in radiation environment. Exposing control systems to radiation may lead to many errors and unexpected failure of the whole accelerator system. Thus, the radiation monitoring system able to monitor radiation doses produced near controlling systems is crucial. Knowledge of produced radiation doses allows to detect errors caused by radiation, make plans of essential exchange of control systems and prevent accelerator from serious damages. The paper presents the project of radiation monitoring system able to monitor radiation environment in real time

    Analytical Modelling and Simulation of Highly Sensitive n- RADFET Dosimeter

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    In the present paper, we have developed a model of a n-RADFET dosimeter device. Moreover, the study has addressed the effects of ionizing radiation on the surface potential and threshold voltage characteristics of the device. In addition, a detailed simulation analysis of the device has been conducted to obtain some further results. The study indicated that high sensitivity can be obtained for RADFET using n-MOSFET device. The results are expected to benefit in establishing the effectiveness of n-RADFET device as a dosimeter
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