Process variation reduction for CMOS logic operating at sub-threshold supply voltage

Sub-threshold circuit design has become a popular approach for building energy efficient digital circuits. The main drawbacks are performance degradation due to the exponentially reduced driving current, and the effect of increased sensitivity to process variation. To obtain energy savings while reducing performance degradation, we propose the design of a robust sub-threshold library and post-silicon tuning using an adaptive fuzzy logic controller which performs body bias scaling. We show that our methodology is able to fix the performance, consequently, making the system more energy efficient and achieving maximum yield

Reliability and security in low power circuits and systems

With the massive deployment of mobile devices in sensitive areas such as healthcare and defense, hardware reliability and security have become hot research topics in recent years. These topics, although different in definition, are usually correlated. This dissertation offers an in-depth treatment on enhancing the reliability and security of low power circuits and systems. The first part of the dissertation deals with the reliability of sub-threshold designs, which use supply voltage lower than the threshold voltage (Vth) of transistors to reduce power. The exponential relationship between delay and Vth significantly jeopardizes their reliability due to process variation induced timing violations. In order to address this problem, this dissertation proposes a novel selective body biasing scheme. In the first work, the selective body biasing problem is formulated as a linearly constrained statistical optimization model, and the adaptive filtering concept is borrowed from the signal processing community to develop an efficient solution. However, since the adaptive filtering algorithm lacks theoretical justification and guaranteed convergence rate, in the second work, a new approach based on semi-infinite programming with incremental hypercubic sampling is proposed, which demonstrates better solution quality with shorter runtime. The second work deals with the security of low power crypto-processors, equipped with Random Dynamic Voltage Scaling (RDVS), in the presence of Correlation Power Analysis (CPA) attacks. This dissertation firstly demonstrates that the resistance of RDVS to CPA can be undermined by lowering power supply voltage. Then, an alarm circuit is proposed to resist this attack. However, the alarm circuit will lead to potential denial-of-service due to noise-triggered false alarms. A non-zero sum game model is then formulated and the Nash Equilibria is analyzed --Abstract, page iii

Designing energy-efficient sub-threshold logic circuits using equalization and non-volatile memory circuits using memristors

The very large scale integration (VLSI) community has utilized aggressive complementary metal-oxide semiconductor (CMOS) technology scaling to meet the ever-increasing performance requirements of computing systems. However, as we enter the nanoscale regime, the prevalent process variation effects degrade the CMOS device reliability. Hence, it is increasingly essential to explore emerging technologies which are compatible with the conventional CMOS process for designing highly-dense memory/logic circuits. Memristor technology is being explored as a potential candidate in designing non-volatile memory arrays and logic circuits with high density, low latency and small energy consumption. In this thesis, we present the detailed functionality of multi-bit 1-Transistor 1-memRistor (1T1R) cell-based memory arrays. We present the performance and energy models for an individual 1T1R memory cell and the memory array as a whole. We have considered TiO2- and HfOx-based memristors, and for these technologies there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO2-based RRAM array consumes the least write energy (4.06 pJ/bit) and read energy (188 fJ/bit) when storing 3 bits/cell for 100 nsec write and 1 nsec read access times. Similarly, HfOx-based RRAM array consumes the least write energy (365 fJ/bit) and read energy (173 fJ/bit) when storing 3 bits/cell for 1 nsec write and 200 nsec read access times. On the logic side, we investigate the use of equalization techniques to improve the energy efficiency of digital sequential logic circuits in sub-threshold regime. We first propose the use of a variable threshold feedback equalizer circuit with combinational logic blocks to mitigate the timing errors in digital logic designed in sub-threshold regime. This mitigation of timing errors can be leveraged to reduce the dominant leakage energy by scaling supply voltage or decreasing the propagation delay. At the fixed supply voltage, we can decrease the propagation delay of the critical path in a combinational logic block using equalizer circuits and, correspondingly decrease the leakage energy consumption. For a 8-bit carry lookahead adder designed in UMC 130 nm process, the operating frequency can be increased by 22.87% (on average), while reducing the leakage energy by 22.6% (on average) in the sub-threshold regime. Overall, the feedback equalization technique provides up to 35.4% lower energy-delay product compared to the conventional non-equalized logic. We also propose a tunable adaptive feedback equalizer circuit that can be used with sequential digital logic to mitigate the process variation effects and reduce the dominant leakage energy component in sub-threshold digital logic circuits. For a 64-bit adder designed in 130 nm our proposed approach can reduce the normalized delay variation of the critical path delay from 16.1% to 11.4% while reducing the energy-delay product by 25.83% at minimum energy supply voltage. In addition, we present detailed energy-performance models of the adaptive feedback equalizer circuit. This work serves as a foundation for the design of robust, energy-efficient digital logic circuits in sub-threshold regime

Subthreshold SRAM Design for Energy Efficient Applications in Nanometric CMOS Technologies

Embedded SRAM circuits are vital components in a modern system on chip (SOC) that can occupy up to 90% of the total area. Therefore, SRAM circuits heavily affect SOC performance, reliability, and yield. In addition, most of the SRAM bitcells are in standby mode and significantly contribute to the total leakage current and leakage power consumption. The aggressive demand in portable devices and billions of connected sensor networks requires long battery life. Therefore, careful design of SRAM circuits with minimal power consumption is in high demand. Reducing the power consumption is mainly achieved by reducing the power supply voltage in the idle mode. However, simply reducing the supply voltage imposes practical limitations on SRAM circuits such as reduced static noise margin, poor write margin, reduced number of cells per bitline, and reduced bitline sensing margin that might cause read/write failures. In addition, the SRAM bitcell has contradictory requirements for read stability and writability. Improving the read stability can cause difficulties in a write operation or vice versa. In this thesis, various techniques for designing subthreshold energy-efficient SRAM circuits are proposed. The proposed techniques include improvement in read margin and write margin, speed improvement, energy consumption reduction, new bitcell architecture and utilizing programmable wordline boosting. A programmable wordline boosting technique is exploited on a conventional 6T SRAM bitcell to improve the operational speed. In addition, wordline boosting can reduce the supply voltage while maintaining the operational frequency. The reduction of the supply voltage allows the memory macro to operate with reduced power consumption. To verify the design, a 16-kb SRAM was fabricated using the TSMC 65 nm CMOS technology. Measurement results show that the maximum operational frequency increases up to 33.3% when wordline boosting is applied. Besides, the supply voltage can be reduced while maintaining the same frequency. This allows reducing the energy consumption to be reduced by 22.2%. The minimum energy consumption achieved is 0.536 fJ/b at 400 mV. Moreover, to improve the read margin, a 6T bitcell SRAM with a PMOS access transistor is proposed. Utilizing a PMOS access transistor results in lower zero level degradation, and hence higher read stability. In addition, the access transistor connected to the internal node holding V DD acts as a stabilizer and counterbalances the effect of zero level degradation. In order to improve the writability, wordline boosting is exploited. Wordline boosting also helps to compensate for the lower speed of the PMOS access transistor compared to a NMOS transistor. To verify our design, a 2kb SRAM is fabricated in the TSMC 65 nm CMOS technology. Measurement results show that the maximum operating frequency of the test chip is at 3.34 MHz at 290 mV. The minimum energy consumption is measured as 1.1 fJ/b at 400 mV

Design and Implementation of a Low Power T-gate Cell Library and Comparison with Its Cmos Equivalent

This work presents the design methodologies, considerations and practical implementation techniques of a sub-threshold/ moderate inversion variability aware Transmission Gate based digital cell library. The implementation method of a reduced ASIC cell library containing minimum number of logic gates sufficient for further front end and back end processing is described. The proposed library targets a reduced implementation time and effort suitable for academic and industrial environment aiming minimum power consumption in battery less devices, portable electronic gadgets or wireless micro sensor networks where computation speed is not of prime concern. To the authors best knowledge, none of the literature till date demonstrates clearly and in a consolidated manner the applicability of T-Gate logic topology as a candidate for ultra-low power applications. Hence, a comparison is presented with equivalent low power CMOS logic gates. Circuit behavior can be significantly impacted due to MOSFET parameter variation. Clear simulation based measurement techniques are presented for measuring concerned parameters like input capacitance, Static Noise Margin(SNM) and IOFF of the T-Gate logic cells and compared with its CMOS equivalent at the same PVT corners. It is observed that the T-Gate shows lower normalized input capacitance than CMOS logic gates. A statistical analysis of logic failure is also presented along with its potential solutions for improvement. As compared to the CMOS gates, the T-Gate logic gates are found to demonstrate slightly narrower distribution of the switching threshold point(VTrip) when performed 200 point Monte Carlo simulation taking process variation and mismatch into account. The CMOS gates demonstrate better static noise margin and hence more robust than T-Gate logic cell and suitable for lower supply voltage operation. A comparison of IOFF is presented to compare the static behavior of the two topologies. The details of device and gate sizing methodology are described along with necessary references. The library is characterized and abstracted to generate necessary files for further processing. A target system is synthesized and a seven stage ring oscillator is simulated in both topologies and is compared to make conclusion based on the observations. T-Gate logic cells demonstrate better static behavior but outperformed by its CMOS logic equivalent in terms of energy consumed per cycle within the range of VDDD from 400mV to 600mV. T-Gate logic gates are slower than its CMOS counterpart at any VDDD of operation and insignificant improvement is achieved with increasing power supply.Electrical Engineerin