6,804 research outputs found
Correcting Charge-Constrained Errors in the Rank-Modulation Scheme
We investigate error-correcting codes for a the
rank-modulation scheme with an application to flash memory
devices. In this scheme, a set of n cells stores information in the
permutation induced by the different charge levels of the individual
cells. The resulting scheme eliminates the need for discrete
cell levels, overcomes overshoot errors when programming cells (a
serious problem that reduces the writing speed), and mitigates the
problem of asymmetric errors. In this paper, we study the properties
of error-correcting codes for charge-constrained errors in the
rank-modulation scheme. In this error model the number of errors
corresponds to the minimal number of adjacent transpositions required
to change a given stored permutation to another erroneous
one—a distance measure known as Kendall’s τ-distance.We show
bounds on the size of such codes, and use metric-embedding techniques
to give constructions which translate a wealth of knowledge
of codes in the Lee metric to codes over permutations in Kendall’s
τ-metric. Specifically, the one-error-correcting codes we construct
are at least half the ball-packing upper bound
Systematic Error-Correcting Codes for Rank Modulation
The rank-modulation scheme has been recently proposed for efficiently storing
data in nonvolatile memories. Error-correcting codes are essential for rank
modulation, however, existing results have been limited. In this work we
explore a new approach, \emph{systematic error-correcting codes for rank
modulation}. Systematic codes have the benefits of enabling efficient
information retrieval and potentially supporting more efficient encoding and
decoding procedures. We study systematic codes for rank modulation under
Kendall's -metric as well as under the -metric.
In Kendall's -metric we present -systematic codes for
correcting one error, which have optimal rates, unless systematic perfect codes
exist. We also study the design of multi-error-correcting codes, and provide
two explicit constructions, one resulting in systematic codes
with redundancy at most . We use non-constructive arguments to show the
existence of -systematic codes for general parameters. Furthermore,
we prove that for rank modulation, systematic codes achieve the same capacity
as general error-correcting codes.
Finally, in the -metric we construct two systematic
multi-error-correcting codes, the first for the case of , and the
second for . In the latter case, the codes have the same
asymptotic rate as the best codes currently known in this metric
Constant-Weight Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank- modulation is a generalization of the rank-modulation scheme, which has been recently suggested as a way of storing information in flash memory.
We study constant-weight Gray codes for the local rank- modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. We provide necessary conditions for the existence of cyclic and cyclic optimal Gray codes. We then specifically study codes of weight 2 and upper bound their efficiency, thus proving that there are no such asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3 and efficiently construct codes which are asymptotically-optimal. We conclude with a construction of codes with asymptotically-optimal rate and weight asymptotically half the length, thus having an asymptotically-optimal charge difference between adjacent cells
Generalized Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going
over a sequence of real-valued variables induces a sequence of permutations.
Local rank-modulation is a generalization of the rank-modulation scheme, which
has been recently suggested as a way of storing information in flash memory. We
study Gray codes for the local rank-modulation scheme in order to simulate
conventional multi-level flash cells while retaining the benefits of rank
modulation. Unlike the limited scope of previous works, we consider code
constructions for the entire range of parameters including the code length,
sliding window size, and overlap between adjacent windows. We show our
constructed codes have asymptotically-optimal rate. We also provide efficient
encoding, decoding, and next-state algorithms.Comment: 7 pages, 1 figure, shorter version was submitted to ISIT 201
Constructions of Rank Modulation Codes
Rank modulation is a way of encoding information to correct errors in flash
memory devices as well as impulse noise in transmission lines. Modeling rank
modulation involves construction of packings of the space of permutations
equipped with the Kendall tau distance.
We present several general constructions of codes in permutations that cover
a broad range of code parameters. In particular, we show a number of ways in
which conventional error-correcting codes can be modified to correct errors in
the Kendall space. Codes that we construct afford simple encoding and decoding
algorithms of essentially the same complexity as required to correct errors in
the Hamming metric. For instance, from binary BCH codes we obtain codes
correcting Kendall errors in memory cells that support the order of
messages, for any constant We also construct
families of codes that correct a number of errors that grows with at
varying rates, from to . One of our constructions
gives rise to a family of rank modulation codes for which the trade-off between
the number of messages and the number of correctable Kendall errors approaches
the optimal scaling rate. Finally, we list a number of possibilities for
constructing codes of finite length, and give examples of rank modulation codes
with specific parameters.Comment: Submitted to IEEE Transactions on Information Theor
Error-Correction in Flash Memories via Codes in the Ulam Metric
We consider rank modulation codes for flash memories that allow for handling
arbitrary charge-drop errors. Unlike classical rank modulation codes used for
correcting errors that manifest themselves as swaps of two adjacently ranked
elements, the proposed \emph{translocation rank codes} account for more general
forms of errors that arise in storage systems. Translocations represent a
natural extension of the notion of adjacent transpositions and as such may be
analyzed using related concepts in combinatorics and rank modulation coding.
Our results include derivation of the asymptotic capacity of translocation rank
codes, construction techniques for asymptotically good codes, as well as simple
decoding methods for one class of constructed codes. As part of our exposition,
we also highlight the close connections between the new code family and
permutations with short common subsequences, deletion and insertion
error-correcting codes for permutations, and permutation codes in the Hamming
distance
Constant-Weight Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going
over a sequence of real-valued variables induces a sequence of permutations.
The local rank-modulation, as a generalization of the rank-modulation scheme,
has been recently suggested as a way of storing information in flash memory.
We study constant-weight Gray codes for the local rank-modulation scheme in
order to simulate conventional multi-level flash cells while retaining the
benefits of rank modulation. We provide necessary conditions for the existence
of cyclic and cyclic optimal Gray codes. We then specifically study codes of
weight 2 and upper bound their efficiency, thus proving that there are no such
asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3
and efficiently construct codes which are asymptotically-optimal
Time division radio relay synchronizing system using different sync code words for in sync and out of sync conditions Patent
Time division relay synchronizer with master sync pulse for activating binary counter to produce signal identifying time slot for statio
- …