24,126 research outputs found
CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit
This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper proposes a synthesis approach for PWL dynamic systems, based on state-variable methods, and identifies the associated analog operators. The GmC approach, combining quasi-linear VCCS's, PWL VCCS's, and capacitors is then explored regarding the implementation of these operators. CMOS basic building blocks for the realization of the quasi-linear VCCS's and PWL VCCS's are presented and applied to design a Chua's circuit IC. The influence of GmC parasitics on the performance of dynamic PWL systems is illustrated through this example. Measured chaotic attractors from a Chua's circuit prototype are given. The prototype has been fabricated in a 2.4- mu m double-poly n-well CMOS technology, and occupies 0.35 mm/sup 2/, with a power consumption of 1.6 mW for a +or-2.5-V symmetric supply. Measurements show bifurcation toward a double-scroll Chua's attractor by changing a bias current
Bifurcations and synchronization using an integrated programmable chaotic circuit
This paper presents a CMOS chip which can act as an autonomous stand-alone unit to generate different real-time chaotic behaviors by changing a few external bias currents. In particular, by changing one of these bias currents, the chip provides different examples of a period-doubling route to chaos. We present experimental orbits and attractors, time waveforms and power spectra measured from the chip. By using two chip units, experiments on synchronization can be carried out as well in real-time. Measurements are presented for the following synchronization schemes: linear coupling, drive-response and inverse system. Experimental statistical characterizations associated to these schemes are also presented. We also outline the possible use of the chip for chaotic encryption of audio signals. Finally, for completeness, the paper includes also a brief description of the chip design procedure and its internal circuitry
Monolithic microwave integrated circuits: Interconnections and packaging considerations
Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance
Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics
Integrated optical isolators have been a longstanding challenge for photonic
integrated circuits (PIC). An ideal integrated optical isolator for PIC should
be made by a monolithic process, have a small footprint, exhibit broadband and
polarization-diverse operation, and be compatible with multiple materials
platforms. Despite significant progress, the optical isolators reported so far
do not meet all these requirements. In this article we present monolithically
integrated broadband magneto-optical isolators on silicon and silicon nitride
(SiN) platforms operating for both TE and TM modes with record high
performances, fulfilling all the essential characteristics for PIC
applications. In particular, we demonstrate fully-TE broadband isolators by
depositing high quality magneto-optical garnet thin films on the sidewalls of
Si and SiN waveguides, a critical result for applications in TE-polarized
on-chip lasers and amplifiers. This work demonstrates monolithic integration of
high performance optical isolators on chip for polarization-diverse silicon
photonic systems, enabling new pathways to impart nonreciprocal photonic
functionality to a variety of integrated photonic devices
Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed
CMOS OTA-C high-frequency sinusoidal oscillators
Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplitude control, both by automatic gain control (AGC) schemes and by limitation schemes. Experimental results from 3- and 2- mu m CMOS (MOSIS) prototypes that exhibit oscillation frequencies of up to 69 MHz are obtained. The amplitudes can be adjusted between 1 V peak to peak and 100 mV peak to peak. Total harmonic distortions from 2.8% down to 0.2% have been measured experimentally.Comisión Interministerial de Ciencia y Tecnología ME87-000
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