22-32 GHz Low-Noise Amplifier Design in 22-nm CMOS-SOI Technology

This thesis explores the use of a 22-nm CMOS-SOI technology in the design of a two-stage amplifier which targets wide bandwidth, low noise and modest linearity in the 28 GHz band. A design methodology with a transformer-coupled, noise-matching interstage is presented for minimizing the noise factor of the two-stage amplifier. Furthermore, benefits of interstage noise matching are discussed. Next, a transistor layout for minimizing noise and maintaining sufficient electromigration reliability is described. It is followed by an analysis of transformer configurations and a transformer layout example is depicted. To verify the design methodology, two amplifier prototypes with noise-matching interstage were fabricated. Measurement shows that the first design achieves a peak gain of 20.7 dB and better-than-10-dB input and output return losses within a frequency range of 22.5 to 32.2 GHz. The lowest noise figure of 1.81 dB is achieved within the frequency range. Input IP3 of -13.4 dBm is achieved with the cost of 17.3 mW DC power consumption. When the bias at the back-gate is lowered from 2 V to 0.62 V, the power consumption is decreased to 5.6 mW and the peak gain drops down to 17.9 dB. Minimum noise figure increases from 1.81 to 2.13 dB and input IP3 drops to -14.4 dBm. The folded output stage in the second design improves the input IP3 to -6.7 dBm at the cost of 35 mW total power consumption. The peak gain of the second design is 20.1 dB, and the lowest noise figure of 1.73 dB within a frequency range of 23.8 to 32.4 GHz. Both designs occupy about 0.05 mm2 active area

Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

CMOS Front-End Circuits in 45-nm SOI Suitable for Modular Phased-Array 60-GHz Radios

Next Fifth-generation (5G) wireless technologies enabling ultra-wideband spectrum availability and increased system capacity can achieve multi-gigabit/s (Gbps) data rates suitable for ultra-high-speed internet access around the 60-GHz band (i.e., Wi-Gig Technology). This mm-wave band is unlicensed and experiences high propagation power losses. Therefore, it is suitable for short-range communications and requires antenna arrays to satisfy the link budget requirements. Half-duplex reconfigurable phased-array transceivers require wideband, low-cost, highly integrated front-end circuits such as bilateral RF switches, low-noise/power amplifiers, passive RF splitters/combiners, and phase shifters implemented in deep sub-micron CMOS. In this dissertation, analysis, design, and verification of essential CMOS front-end components are covered and fabricated in GlobalFoundries 45-nm RF-SOI CMOS technology. Firstly, a fully-differential, single-pole, single-throw (SPST) switch capable of high isolation in broadband CMOS transceivers is described. The SPST switch realizes better than 50-dB isolation (ISO) across DC to 43 GHz while maintaining an insertion loss (IL) below 3 dB. Measured RF input power for 1-dB compression (IP1dB) of the IL is +19.6 dBm, and the measured input third-order intercept point (IIP3) is +30.4 dBm (both assuming differential inputs at 20 GHz). The prototype has an active area of 0.0058 mm^2. Secondly, a single-pole double-throw (SPDT) switch is implemented using the SPST concept by using a balun to convert the shared differential path to a single-ended antenna port. The SPDT simulations predict less than 3.5-dB IL and greater than 40-dB ISO across 55 to 65 GHz frequency band. An IP1dB of +21 dBm is expected from large-signal simulations. The prototype has an active area of 0.117 mm^2. Thirdly, a fully-differential switched-LC topology adopted with slow-wave artificial transmission line concept, and phase inversion network is described for a 360-degree phase shift range with 11.25-degree phase resolution. The average IL of the complete phase shifter is 5.3 dB with less than 1-dB rms IL error. Furthermore, the IP1dB of the phase shifter is +16 dBm. The prototype has an active area of 0.245 mm^2. Lastly, a fully-differential, 2-stage, common-source (CS) low-noise amplifier (LNA) is developed with wideband matching from 57.8 GHz to 67 GHz, a maximum simulated forward power gain of 20.8 dB, and a minimum noise figure of 3.07 dB. The LNA consumes 21 mW and predicts an OP1dB of 4.8 dBm from the 1-V supply. The LNA consumes an active area of 0.028 mm^2

CMOS radio frequency circuits for short-range direct-conversion receivers

The research described in this thesis is focused on the design and implementation of radio frequency (RF) circuits for direct-conversion receivers. The main interest is in RF front-end circuits, which contain low-noise amplifiers, downconversion mixers, and quadrature local oscillator signal generation circuits. Three RF front-end circuits were fabricated in a short-channel CMOS process and experimental results are presented. A low-noise amplifier (LNA) is typically the first amplifying block in the receiver. A large number of LNAs have been reported in the literature. In this thesis, wideband LNA structures are of particular interest. The most common and relevant LNA topologies are analyzed in detail in the frequency domain and theoretical limitations are found. New LNA structures are presented and a comparison to the ones found in the literature is made. In this work, LNAs are implemented with downconversion mixers as RF front-ends. The designed mixers are based on the commonly used Gilbert cell. Different mixer implementation alternatives are presented and the design of the interface between the LNA and the downconversion mixer is discussed. In this work, the quadrature local oscillator signal is generated either by using frequency dividers or polyphase filters (PPF). Different possibilities for implementing frequency dividers are briefly described. Polyphase filters were already introduced by the 1970s and integrated circuit (IC) realizations to generate quadrature signals have been published since the mid-1990s. Although several publications where the performance of the PPFs has been studied either by theoretical calculations or simulations can be found in the literature, none of them covers all the relevant design parameters. In this thesis, the theory behind the PPFs is developed such that all the relevant design parameters needed in the practical circuit design have been calculated and presented with closed-form equations whenever possible. Although the main focus was on twoand three-stage PPFs, which are the most common ones encountered in practical ICs, the presented calculation methods can be extended to analyze the performance of multistage PPFs as well. The main application targets of the circuits presented in this thesis are the short-range wireless sensor system and ultrawideband (UWB). Sensors are capable of monitoring temperature, pressure, humidity, or acceleration, for example. The amount of transferred data is typically small and therefore a modest bit rate, less than 1 Mbps, is adequate. The sensor system applied in this thesis operates at 2.4-GHz ISM band (Industrial, Scientific, and Medical). Since the sensors must be able to operate independently for several years, extremely low power consumption is required. In sensor radios, the receiver current consumption is dominated by the blocks and elements operating at the RF. Therefore, the target was to develop circuits that can offer satisfactory performance with a current consumption level that is small compared to other receivers targeted for common cellular systems. On the other hand, there is a growing need for applications that can offer an extremely high data rate. UWB is one example of such a system. At the moment, it can offer data rates of up to 480 Mbps. There is a frequency spectrum allocated for UWB systems between 3.1 and 10.6 GHz. The UWB band is further divided into several narrower band groups (BG), each occupying a bandwidth of approximately 1.6 GHz. In this work, a direct-conversion RF front-end is designed for a dual-band UWB receiver, which operates in band groups BG1 and BG3, i.e. at 3.1 – 4.8 GHz and 6.3 – 7.9 GHz frequency areas, respectively. Clearly, an extremely wide bandwidth combined with a high operational frequency poses challenges for circuit design. The operational bandwidths and the interfaces between the circuit blocks need to be optimized to cover the wanted frequency areas. In addition, the wideband functionality should be achieved without using a number of on-chip inductors in order to minimize the die area, and yet the power consumption should be kept as small as possible. The characteristics of the two main target applications are quite different from each other with regard to power consumption, bandwidth, and operational frequency requirements. A common factor for both is their short, i.e. less than 10 meters, range. Although the circuits presented in this thesis are targeted on the two main applications mentioned above, they can be utilized in other kind of wireless communication systems as well. The performance of three experimental circuits was verified with measurements and the results are presented in this work. Two of them have been a part of a whole receiver including baseband amplifiers and filters and analog-to-digital converters. Experimental circuits were fabricated in a 0.13-µm CMOS process. In addition, this thesis includes design examples where new circuit ideas and implementation possibilities are introduced by using 0.13-µm and 65-nm CMOS processes. Furthermore, part of the theory presented in this thesis is validated with design examples in which actual IC component models are used.Tässä väitöskirjassa esitetty tutkimus keskittyy suoramuunnosvastaanottimen radiotaajuudella (radio frequency, RF) toimivien piirien suunnitteluun ja toteuttamiseen. Työ keskittyy vähäkohinaiseen vahvistimeen (low-noise amplifier, LNA), alassekoittajaan ja kvadratuurisen paikallisoskillaattorisignaalin tuottavaan piiriin. Työssä toteutettiin kolme RF-etupäätä erittäin kapean viivanleveyden CMOS-prosessilla, ja niiden kokeelliset tulokset esitetään. Vähäkohinainen vahvistin on yleensä ensimmäinen vahvistava lohko vastaanottimessa. Useita erilaisia vähäkohinaisia vahvistimia on esitetty kirjallisuudessa. Tämän työn kohteena ovat eritoten laajakaistaiset LNA-rakenteet. Tässä työssä analysoidaan taajuustasossa yleisimmät ja oleellisimmat LNA-topologiat. Lisäksi uusia LNA-rakenteita on esitetty tässä työssä ja niitä on verrattu muihin kirjallisuudessa esitettyihin piireihin. Tässä työssä LNA:t on toteutettu yhdessä alassekoittimen kanssa muodostaen RF-etupään. Työssä suunnitellut alassekoittimet perustuvat yleisesti käytettyyn Gilbertin soluun. Erilaisia sekoittajan suunnitteluvaihtoehtoja ja LNA:n ja alassekoittimen välisen rajapinnan toteutustapoja on esitetty. Tässä työssä kvadratuurinen paikallisoskillaattorisignaali on muodostettu joko käyttämällä taajuusjakajia tai monivaihesuodattimia. Erilaisia taajuusjakajia ja niiden toteutustapoja käsitellään yleisellä tasolla. Monivaihesuodatinta, joka on alunperin kehitetty jo 1970-luvulla, on käytetty integroiduissa piireissä kvadratuurisignaalin tuottamiseen 1990-luvun puolivälistä lähtien. Kirjallisuudesta löytyy lukuisia artikkeleita, joissa monivaihesuodattimen toimintaa on käsitelty teoreettisesti laskien ja simuloinnein. Kuitenkaan kaikkia sen suunnitteluparametreja ei tähän mennessä ole käsitelty. Tässä työssä monivaihesuodattimen teoriaa on kehitetty edelleen siten, että käytännön piirisuunnittelussa tarvittavat oleelliset parametrit on analysoitu ja suunnitteluyhtälöt on esitetty suljetussa muodossa aina kuin mahdollista. Vaikka työssä on keskitytty yleisimpiin eli kaksi- ja kolmiasteisiin monivaihesuodattimiin, on työssä esitetty menetelmät, joilla laskentaa voidaan jatkaa aina useampiasteisiin suodattimiin asti. Työssä esiteltyjen piirien pääkohteina ovat lyhyen kantaman sensoriradio ja erittäin laajakaistainen järjestelmä (ultrawideband, UWB). Sensoreilla voidaan tarkkailla esimerkiksi ympäristön lämpötilaa, kosteutta, painetta tai kiihtyvyyttä. Siirrettävän tiedon määrä on tyypillisesti vähäistä, jolloin pieni tiedonsiirtonopeus, alle 1 megabitti sekunnissa, on välttävä. Tämän työn kohteena oleva sensoriradiojärjestelmä toimii kapealla kaistalla 2,4 gigahertsin ISM-taajuusalueella (Industrial, Scientific, and Medical). Koska sensorien tavoitteena on toimia itsenäisesti ilman pariston vaihtoa useita vuosia, täytyy niiden kuluttaman virran olla erittäin vähäistä. Sensoriradiossa vastaanottimen tehonkulutuksen kannalta määräävässä asemassa ovat radiotaajuudella toimivat piirit. Tavoitteena oli tutkia ja kehittää piirirakenteita, joilla päästään tyydyttävään suorituskykyyn tehonkulutuksella, joka on vähäinen verrattuna muiden tavallisten langattomien tiedonsiirtojärjestelmien radiovastaanottimiin. Toisaalta viime aikoina on kasvanut tarvetta myös järjestelmille, jotka kykenevät tarjoamaan erittäin korkean tiedonsiirtonopeuden. UWB on esimerkki tällaisesta järjestelmästä. Tällä hetkellä se tarjoaa tiedonsiirtonopeuksia aina 480 megabittiin sekunnissa. UWB:lle on varattu taajuusalueita 3,1 ja 10,6 gigahertsin taajuuksien välillä. Kyseinen kaista on edelleen jaettu pienempiin taajuusryhmiin (band group, BG), joiden kaistanleveys on noin 1,6 gigahertsiä. Tässä työssä on toteutettu RF-etupää radiovastaanottimeen, joka pystyy toimimaan BG1:llä ja BG3:lla eli taajuusalueilla 3,1 - 4,7 GHz ja 6,3 - 7,9 GHz. Erittäin suuri kaistanleveys yhdistettynä korkeaan toimintataajuuteen tekee radiotaajuuspiirien suunnittelusta haasteellista. Piirirakenteiden toimintakaistat ja piirien väliset rajapinnat tulee optimoida riittävän laajoiksi käyttämättä kuitenkaan liian montaa piille integroitua kelaa piirin pinta-alan minimoimiseksi, ja lisäksi piirit tulisi toteuttaa mahdollisimman alhaisella tehonkulutuksella. Työssä esiteltyjen piirien kaksi pääkohdetta ovat hyvin erityyppisiä, mitä tulee tehonkulutus-, kaistanleveys- ja toimintataajuusvaatimuksiin. Yhteistä molemmille on lyhyt, alle 10 metrin kantama. Vaikka tässä työssä esitellyt piirit onkin kohdennettu kahteen pääsovelluskohteeseen, voidaan esitettyjä piirejä käyttää myös muiden tiedonsiirtojärjestelmien piirien suunnitteluun. Tässä työssä esitetään mittaustuloksineen yhteensä kolme kokeellista piiriä yllämainittuihin järjestelmiin. Kaksi ensimmäistä kokeellista piiriä muodostaa kokonaisen radiovastaanottimen yhdessä analogisten kantataajuusosien ja analogia-digitaali-muuntimien kanssa. Esitetyt kokeelliset piirit on toteutettu käyttäen 0,13 µm:n viivanleveyden CMOS-tekniikkaa. Näiden lisäksi työ pitää sisällään piirisuunnitteluesimerkkejä, joissa esitetään ideoita ja mahdollisuuksia käyttäen 0,13 µm:n ja 65 nm:n viivanleveyden omaavia CMOS-tekniikoita. Lisäksi piirisuunnitteluesimerkein havainnollistetaan työssä esitetyn teorian paikkansapitävyyttä käyttämällä oikeita komponenttimalleja.reviewe

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

High efficiency delta-sigma modulation data converters

Enabled by continued device scaling in CMOS technology, more and more functions that were previously realized in separate chips are getting integrated on a single chip nowadays. Integration on silicon has opened the door to new portable wireless applications, and initiated a widespread use of these devices in our common everyday life. Wide signal bandwidth, high linearity and dynamic range, and low power dissipation are required of embedded data converters that are the performance-limiting key building blocks of those systems. Thus, power-efficient and highly-linear data conversion over wide range of signal bands is essential to get the full benefits from device scaling. This continued trend keeps innovation in the design of data converter continuing. Traditionally, delta-sigma modulation data converters proved to be very effective in applications where high resolution was necessary in a relatively narrow signal band. There have been active research efforts across academia and industry on the extension of achievable signal bandwidth without compromising the performance of these data converters. In this dissertation, architectural innovations, combined with effective design techniques for delta-sigma modulation data converters, are presented to overcome the associated limitations. The effectiveness of the proposed approaches is demonstrated by test results for the following state-of-the-art prototype designs: (1) a 0.8 V, 2.6 mW, 88 dB dual-channel audio delta-sigma modulation D/A converter with headphone driver; (2) an 88 dB ring-coupled delta-sigma ADC with 1.9 MHz bandwidth and -102.4 dB THD; (3) a multi-cell noise-coupled delta-sigma ADC with 1.9 MHz bandwidth, 88 dB DR, and -98 dB THD; (4) an 8.1 mW, 82 dB self-coupled delta-sigma ADC with 1.9 MHz bandwidth and -97 dB THD; (5) a noise-coupled time-interleaved delta-sigma ADC with 4.2 MHz bandwidth, -98 dB THD, and 79 dB SNDR; (6) a noise-coupled time-interleaved delta-sigma ADC with 2.5 MHz bandwidth, -104 dB THD, and 81 dB SNDR. As an extension of this research, two novel architectures for efficient double-sampling delta-sigma ADCs and improved low-distortion delta-sigma ADC are proposed, and validated by extensive simulations.Keywords: improved low-distortion modulator, time interleaving, data converter, multi-cell ADC, efficient double sampling, noise coupling, delta-sigma modulatio

Circuit techniques for low-voltage and high-speed A/D converters

The increasing digitalization in all spheres of electronics applications, from telecommunications systems to consumer electronics appliances, requires analog-to-digital converters (ADCs) with a higher sampling rate, higher resolution, and lower power consumption. The evolution of integrated circuit technologies partially helps in meeting these requirements by providing faster devices and allowing for the realization of more complex functions in a given silicon area, but simultaneously it brings new challenges, the most important of which is the decreasing supply voltage. Based on the switched capacitor (SC) technique, the pipelined architecture has most successfully exploited the features of CMOS technology in realizing high-speed high-resolution ADCs. An analysis of the effects of the supply voltage and technology scaling on SC circuits is carried out, and it shows that benefits can be expected at least for the next few technology generations. The operational amplifier is a central building block in SC circuits, and thus a comparison of the topologies and their low voltage capabilities is presented. It is well-known that the SC technique in its standard form is not suitable for very low supply voltages, mainly because of insufficient switch control voltage. Two low-voltage modifications are investigated: switch bootstrapping and the switched opamp (SO) technique. Improved circuit structures are proposed for both. Two ADC prototypes using the SO technique are presented, while bootstrapped switches are utilized in three other prototypes. An integral part of an ADC is the front-end sample-and-hold (S/H) circuit. At high signal frequencies its linearity is predominantly determined by the switches utilized. A review of S/H architectures is presented, and switch linearization by means of bootstrapping is studied and applied to two of the prototypes. Another important parameter is sampling clock jitter, which is analyzed and then minimized with carefully-designed clock generation and buffering. The throughput of ADCs can be increased by using parallelism. This is demonstrated on the circuit level with the double-sampling technique, which is applied to S/H circuits and a pipelined ADC. An analysis of nonidealities in double-sampling is presented. At the system level parallelism is utilized in a time-interleaved ADC. The mismatch of parallel signal paths produces errors, for the elimination of which a timing skew insensitive sampling circuit and a digital offset calibration are developed. A total of seven prototypes are presented: two double-sampled S/H circuits, a time-interleaved ADC, an IF-sampling self-calibrated pipelined ADC, a current steering DAC with a deglitcher, and two pipelined ADCs employing the SO technique.reviewe