Pareto Points in SRAM Design Using the Sleepy Stack Approach

Abstract. Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. Leakage is a serious problem particularly for SRAM which occupies large transistor count in most state-of-the-art chip designs. We propose a novel ultra-low leakage SRAM design which we call "sleepy stack SRAM." Unlike the straightforward sleep approach, sleepy stack SRAM can retain logic state during sleep mode, which is crucial for a memory element. Compared to the best alternative we could find, a 6-T SRAM cell with high-Vth transistors, the sleepy stack SRAM cell with 2xVth at 110°C achieves, using 0.07µ technology models, more than 2.77X leakage power reduction at a cost of 16% delay increase and 113% area increase. Alternatively, by widening wordline transistors and transistors in the pull-down network, the sleepy stack SRAM cell can achieve 2.26X leakage reduction without increasing delay at a cost of a 125% area penalty

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Wireless Chip-Scale Communications for Neural Network Accelerators

Wireless on-chip communications have been proposed as a complement to conventional Network-on-Chip (NoC) paradigms in manycore processors. In massively parallel architectures, the fast broadcast and reconfigurability capabilities of the wireless plane open the door to new scalable and adaptive architectures with significant impact on a plethora of fields. This thesis aims to explore such impact in the all-pervasive field of AI accelerators, designing and evaluating new accelerators augmented with wireless on-chip communication.The last decade has witnessed an explosive growth in the use of Deep Neural Networks in fields such as computer vision, natural language processing, medicine or economics. Their achievements in accuracy across so many relevant and different applications exhibit the enormous potential of this disruptive technology. However, this unprecedented performance is closely tied with the fact that their new designs contain much deeper and bigger layer sets, forcing them to manage millions - and in some cases even billions - of parameters. This comes at a high computational and communication cost at the processor level, which has prompted the development of new hardware aimed at handling such large computing expense more efficiently, the so called \acrlong{dnn} accelerators. This work explores the potential of enhancing the performance of these accelerators by introducing Wireless Networks-on-Chip in their design, a novel interconnect paradigm proposed by the research community to overcome some of the communication challenges that manycore systems face. Specifically, both on-chip and off-chip wireless interconnect implementations have been studied and evaluated. In the off-chip case, a theoretical improvement of 13X in the runtime has been achieved, but at the expense of some area and power overheads.La última década ha sido testigo de un inmenso crecimiento en el uso de Deep Neural Networks en campos como la visión artificial, procesamiento de lenguaje natural, medicina o economía. Haber conseguido estos resultados sin precedentes en aplicaciones tan relevantes y variadas muestra el enorme potencial de esta tecnología tan disruptiva. Sin embargo, estos logros van muy ligados al hecho de que los nuevos diseños contienen muchas más capas y más profundas, lo que se traduce en millones - y en algunos casos billones - de parámetros. Esto supone un gran coste computacional y de comunicación a nivel de procesador, lo que ha impulsado el desarrollo de nuevo hardware que permita gestionar tal coste de manera más eficiente, los llamados aceleradores de Deep Neural Networks. Este proyecto explora la potencial mejora en rendimiento de estos aceleradores mediante la introducción de Wireless Newtorks-on-Chip en su diseño, un nuevo paradigma de interconexiones propuesto por la comunidad científica para superar algunos de los problemas de comunicación que sistemas manycore deben afrontar. Específicamente, implementaciones tanto on-chip como off-chip se han estudiado y evaluado. Se ha conseguido una mejora teórica de 13X en el runtime, pero con algunos costes añadidos de área y potencia.La darrera dècada ha estat testimoni d'un immens creixement en l'ús de Deep Neural Networks en camps com la visió artificial, processament de llenguatge natural, medicina o economia. Haver aconseguit aquests resultats sense precedents en aplicacions tan rellevants i variades mostra l?enorme potencial d?aquesta tecnologia tan disruptiva. No obstant, aquests èxits van molt lligats al fet de que els nous dissenys contenen moltes més capes i més profundes, cosa que es tradueix en milions - i en alguns casos bilions - de paràmetres. Això suposa un gran cost computacional i de comunicació a nivell de processador, cosa que ha impulsat el desenvolupament de nou hardware que permetin gestionar tal cost de manera més eficient, els anomenats acceleradors de Deep Neural Networks. Aquest projecte explora la potencial millora en rendiment d'aquests acceleradors mitjançant la introducció de Wireless Newtorks-on-Chip al seu disseny, un nou paradigma d'interconnexions proposat per la comunitat científica per a superar alguns dels problemes de comunicació que sistemes manycore han d'afrontar. Específicament, implementacions tant on-chip com off-chip s'han estudiat i evaluat. En el cas off-chip, s'ha aconseguit una millora teòrica de 13X al runtime però amb alguns costos afegits d'àrea i potència

Pareto Points in SRAM Design Using the Sleepy Stack Approach

Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. Leakage is a serious problem particularly for SRAM which occupies large transistor count in most state-of-the-art chip designs. We propose a novel ultra-low leakage SRAM design which we call "sleepy stack SRAM." Unlike many other previous approaches, sleepy stack SRAM can retain logic state during sleep mode, which is crucial for a memory element. Compared to the best alternative we could find, a 6T SRAM cell with high-V[subscript th] transistors, the sleepy stack SRAM cell with 1.5xV[subscript th] at 110-degree C achieves more than 5X leakage power reduction at a cost of 31% delay increase and 113% area increase. Alternatively, by widening wordline pass transistors, the sleepy stack SRAM cell can match the delay of the high-V[subscript th] 6T SRAM and still achieve 2.5X leakage power reduction at a cost of a 139% area penalty

Pareto Points in SRAM Design Using the Sleepy Stack Approach

Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. Leakage is a serious problem particularly for SRAM which occupies large transistor count in most state-of-the-art chip designs. We propose a novel ultralow leakage SRAM design which we call “sleepy stack SRAM. ” Unlike many other previous approaches, sleepy stack SRAM can retain logic state during sleep mode, which is crucial for a memory element. Compared to the best alternative we could find, a 6-T SRAM cell with high-Vth transistors, the sleepy stack SRAM cell with 2xVth at 110 o C achieves more than 2.77X leakage power reduction at a cost of 16 % delay increase and 113 % area increase. Alternatively, by wideningwordline transistors and transistors in the pull-down network, the sleepy stack SRAM cell can achieves 2.26X leakage reduction without increasing delay at a cost of a 125 % area penalty.

XXIII Congreso Argentino de Ciencias de la Computación - CACIC 2017 : Libro de actas

Trabajos presentados en el XXIII Congreso Argentino de Ciencias de la Computación (CACIC), celebrado en la ciudad de La Plata los días 9 al 13 de octubre de 2017, organizado por la Red de Universidades con Carreras en Informática (RedUNCI) y la Facultad de Informática de la Universidad Nacional de La Plata (UNLP).Red de Universidades con Carreras en Informática (RedUNCI