Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Parametric macromodeling of lossy and dispersive multiconductor transmission lines

We propose an innovative parametric macromodeling technique for lossy and dispersive multiconductor transmission lines (MTLs) that can be used for interconnect modeling. It is based on a recently developed method for the analysis of lossy and dispersive MTLs extended by using the multivariate orthonormal vector fitting (MOVF) technique to build parametric macromodels in a rational form. They take into account design parameters, such as geometrical layout or substrate features, in addition to frequency. The presented technique is suited to generate state-space models and synthesize equivalent circuits, which can be easily embedded into conventional SPICE-like solvers. Parametric macromodels allow to perform design space exploration, design optimization, and sensitivity analysis efficiently. Numerical examples validate the proposed approach in both frequency and time domain

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's)

Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling

We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system behavior. In order to improve the accuracy and to reduce the number of computationally expensive thermal simulations needed for the macromodel generation, a decomposition of the frequency-domain data samples of the thermal impedance matrix is proposed. The approach is applied to study the impact of layout variations on the dynamic ET behavior of a state-of-the-art 8-finger AlGaN/GaN high-electron mobility transistor grown on a SiC substrate. The simulation results confirm the high accuracy and computational gain obtained using parameterized macromodels instead of a standard method based on iterative complete numerical analysis

Tensor Computation: A New Framework for High-Dimensional Problems in EDA

Many critical EDA problems suffer from the curse of dimensionality, i.e. the very fast-scaling computational burden produced by large number of parameters and/or unknown variables. This phenomenon may be caused by multiple spatial or temporal factors (e.g. 3-D field solvers discretizations and multi-rate circuit simulation), nonlinearity of devices and circuits, large number of design or optimization parameters (e.g. full-chip routing/placement and circuit sizing), or extensive process variations (e.g. variability/reliability analysis and design for manufacturability). The computational challenges generated by such high dimensional problems are generally hard to handle efficiently with traditional EDA core algorithms that are based on matrix and vector computation. This paper presents "tensor computation" as an alternative general framework for the development of efficient EDA algorithms and tools. A tensor is a high-dimensional generalization of a matrix and a vector, and is a natural choice for both storing and solving efficiently high-dimensional EDA problems. This paper gives a basic tutorial on tensors, demonstrates some recent examples of EDA applications (e.g., nonlinear circuit modeling and high-dimensional uncertainty quantification), and suggests further open EDA problems where the use of tensor computation could be of advantage.Comment: 14 figures. Accepted by IEEE Trans. CAD of Integrated Circuits and System

Process Variation Aware DRAM (Dynamic Random Access Memory) Design Using Block-Based Adaptive Body Biasing Algorithm

Large dense structures like DRAMs (Dynamic Random Access Memory) are particularly susceptible to process variation, which can lead to variable latencies in different memory arrays. However, very little work exists on variation studies in DRAMs. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not impact the overall processor performance. However, emerging technology trends like three-dimensional integration, use of sophisticated memory controllers, and continued scaling of technology node, substantially reduce DRAM access latency. Hence, future technology nodes will see widespread adoption of embedded DRAMs. This makes process variation a critical upcoming challenge in DRAMs that must be addressed in current and forthcoming technology generations. In this paper, techniques for modeling the effect of random, as well as spatial variation, in large DRAM array structures are presented. Sensitivity-based gate level process variation models combined with statistical timing analysis are used to estimate the impact of process variation on the DRAM performance and leakage power. A simulated annealing-based Vth assignment algorithm using adaptive body biasing is proposed in this thesis to improve the yield of DRAM structures. By applying the algorithm on a 1GB DRAM array, an average of 14.66% improvement in the DRAM yield is obtained