Approche industrielle aux boîtes quantiques dans des dispositifs de silicium sur isolant complètement déplété pour applications en information quantique

La mise en oeuvre des qubits de spin électronique à base de boîtes quantiques réalisés en utilisant une technologie avancée de métal-oxyde-semiconducteur complémentaire (en anglais: CMOS ou Complementary Metal-Oxide-Semiconductor) fonctionnant à des températures cryogéniques permet d’envisager la fabrication industrielle reproductible et à haut rendement de systèmes de qubits de spin à grande échelle. Le développement d’une architecture de boîtes quantiques à base de silicium fabriquées en utilisant exclusivement des techniques de fabrication industrielle CMOS constitue une étape majeure dans cette direction. Dans cette thèse, le potentiel de la technologie UTBB (en anglais: Ultra-Thin Body and Buried oxide) silicium sur isolant complétement déplété (en anglais: FD-SOI ou Fully Depleted Silicon-On-Insulator) 28 nm de STMicroelectronics (Crolles, France) a été étudié pour la mise en oeuvre de boîtes quantiques bien définies, capables de réaliser des systèmes de qubit de spin. Dans ce contexte, des mesures d’effet Hall ont été réalisées sur des microstructures FD-SOI à 4.2 K afin de déterminer la qualité du noeud technologique pour les applications de boîtes quantiques. De plus, un flot du processus d’intégration, optimisé pour la mise en oeuvre de dispositifs quantiques utilisant exclusivement des méthodes de fonderie de silicium pour la production de masse est présenté, en se concentrant sur la réduction des risques de fabrication et des délais d’exécution globaux. Enfin, deux géométries différentes de dispositifs à boîtes quantiques FD-SOI de 28nm ont été conçues et leurs performances ont été étudiées à 1.4 K. Dans le cadre d’une collaboration entre Nanoacademic Technologies, Institut quantique et STMicroelectronics, un modèle QTCAD (en anglais: Quantum Technology Computer-Aided Design) en 3D a été développé pour la modélisation de dispositifs à boîtes quantiques FD-SOI. Ainsi, en complément de la caractérisation expérimentale des structures de test via des mesures de transport et de spectroscopie de blocage de Coulomb, leur performance est modélisée et analysée à l’aide du logiciel QTCAD. Les résultats présentés ici démontrent les avantages de la technologie FD-SOI par rapport à d’autres approches pour les applications de calcul quantique, ainsi que les limites identifiées du noeud 28 nm dans ce contexte. Ce travail ouvre la voie à la mise en oeuvre des nouvelles générations de dispositifs à boîtes quantiques FD-SOI basées sur des noeuds technologiques inférieurs.Abstract: Electron spin qubits based on quantum dots implemented using advanced Complementary Metal-Oxide-Semiconductor (CMOS) technology functional at cryogenic temperatures promise to enable reproducible high-yield industrial manufacturing of large-scale spin qubit systems. A milestone in this direction is to develop a silicon-based quantum dot structure fabricated using exclusively CMOS industrial manufacturing techniques. In this thesis, the potential of the industry-standard process 28 nm Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) technology of STMicroelectronics (Crolles, France) was investigated for the implementation of well-defined quantum dots capable to realize spin qubit systems. In this context, Hall effect measurements were performed on FD-SOI microstructures at 4.2 K to determine the quality of the technology node for quantum dot applications. Moreover, an optimized integration process flow for the implementation of quantum devices, using exclusively mass-production silicon-foundry methods is presented, focusing on reducing manufacturing risks and overall turnaround times. Finally, two different geometries of 28 nm FD-SOI quantum dot devices were conceived, and their performance was studied at 1.4 K. In the framework of a collaboration between Nanoacademic Technologies, Institut quantique, and STMicroelectronics, a 3D Quantum Technology Computer-Aided Design (QTCAD) model was developed for FD-SOI quantum dot device modeling. Therefore, along with the experimental characterization of the test structures via transport and Coulomb blockade spectroscopy measurements, their performance is modeled and analyzed using the QTCAD software. The results reported here demonstrate the advantages of the FD-SOI technology over other approaches for quantum computing applications, as well as the identified limitations of the 28 nm node in this context. This work paves the way for the implementation of the next generations of FD-SOI quantum dot devices based on lower technology nodes

Microarchitectural Low-Power Design Techniques for Embedded Microprocessors

With the omnipresence of embedded processing in all forms of electronics today, there is a strong trend towards wireless, battery-powered, portable embedded systems which have to operate under stringent energy constraints. Consequently, low power consumption and high energy efficiency have emerged as the two key criteria for embedded microprocessor design. In this thesis we present a range of microarchitectural low-power design techniques which enable the increase of performance for embedded microprocessors and/or the reduction of energy consumption, e.g., through voltage scaling. In the context of cryptographic applications, we explore the effectiveness of instruction set extensions (ISEs) for a range of different cryptographic hash functions (SHA-3 candidates) on a 16-bit microcontroller architecture (PIC24). Specifically, we demonstrate the effectiveness of light-weight ISEs based on lookup table integration and microcoded instructions using finite state machines for operand and address generation. On-node processing in autonomous wireless sensor node devices requires deeply embedded cores with extremely low power consumption. To address this need, we present TamaRISC, a custom-designed ISA with a corresponding ultra-low-power microarchitecture implementation. The TamaRISC architecture is employed in conjunction with an ISE and standard cell memories to design a sub-threshold capable processor system targeted at compressed sensing applications. We furthermore employ TamaRISC in a hybrid SIMD/MIMD multi-core architecture targeted at moderate to high processing requirements (> 1 MOPS). A range of different microarchitectural techniques for efficient memory organization are presented. Specifically, we introduce a configurable data memory mapping technique for private and shared access, as well as instruction broadcast together with synchronized code execution based on checkpointing. We then study an inherent suboptimality due to the worst-case design principle in synchronous circuits, and introduce the concept of dynamic timing margins. We show that dynamic timing margins exist in microprocessor circuits, and that these margins are to a large extent state-dependent and that they are correlated to the sequences of instruction types which are executed within the processor pipeline. To perform this analysis we propose a circuit/processor characterization flow and tool called dynamic timing analysis. Moreover, this flow is employed in order to devise a high-level instruction set simulation environment for impact-evaluation of timing errors on application performance. The presented approach improves the state of the art significantly in terms of simulation accuracy through the use of statistical fault injection. The dynamic timing margins in microprocessors are then systematically exploited for throughput improvements or energy reductions via our proposed instruction-based dynamic clock adjustment (DCA) technique. To this end, we introduce a 6-stage 32-bit microprocessor with cycle-by-cycle DCA. Besides a comprehensive design flow and simulation environment for evaluation of the DCA approach, we additionally present a silicon prototype of a DCA-enabled OpenRISC microarchitecture fabricated in 28 nm FD-SOI CMOS. The test chip includes a suitable clock generation unit which allows for cycle-by-cycle DCA over a wide range with fine granularity at frequencies exceeding 1 GHz. Measurement results of speedups and power reductions are provided