Desynchronization: Synthesis of asynchronous circuits from synchronous specifications

Asynchronous implementation techniques, which measure logic delays at run time and activate registers accordingly, are inherently more robust than their synchronous counterparts, which estimate worst-case delays at design time, and constrain the clock cycle accordingly. De-synchronization is a new paradigm to automate the design of asynchronous circuits from synchronous specifications, thus permitting widespread adoption of asynchronicity, without requiring special design skills or tools. In this paper, we first of all study different protocols for de-synchronization and formally prove their correctness, using techniques originally developed for distributed deployment of synchronous language specifications. We also provide a taxonomy of existing protocols for asynchronous latch controllers, covering in particular the four-phase handshake protocols devised in the literature for micro-pipelines. We then propose a new controller which exhibits provably maximal concurrency, and analyze the performance of desynchronized circuits with respect to the original synchronous optimized implementation. We finally prove the feasibility and effectiveness of our approach, by showing its application to a set of real designs, including a complete implementation of the DLX microprocessor architectur

A scalable readout system for a superconducting adiabatic quantum optimization system

We have designed, fabricated and tested an XY-addressable readout system that is specifically tailored for the reading of superconducting flux qubits in an integrated circuit that could enable adiabatic quantum optimization. In such a system, the flux qubits only need to be read at the end of an adiabatic evolution when quantum mechanical tunneling has been suppressed, thus simplifying many aspects of the readout process. The readout architecture for an $N$-qubit adiabatic quantum optimization system comprises $N$ hysteretic dc SQUIDs and $N$ rf SQUID latches controlled by $2\sqrt{N} + 2$ bias lines. The latching elements are coupled to the qubits and the dc SQUIDs are then coupled to the latching elements. This readout scheme provides two key advantages: First, the latching elements provide exceptional flux sensitivity that significantly exceeds what may be achieved by directly coupling the flux qubits to the dc SQUIDs using a practical mutual inductance. Second, the states of the latching elements are robust against the influence of ac currents generated by the switching of the hysteretic dc SQUIDs, thus allowing one to interrogate the latching elements repeatedly so as to mitigate the effects of stochastic switching of the dc SQUIDs. We demonstrate that it is possible to achieve single qubit read error rates of $<10^{-6}$ with this readout scheme. We have characterized the system-level performance of a 128-qubit readout system and have measured a readout error probability of $8\times10^{-5}$ in the presence of optimal latching element bias conditions.Comment: Updated for clarity, final versio

Reconfigurable nanoelectronics using graphene based spintronic logic gates

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the state-of-the-art CMOS counterparts. This design can also be applied in applications such as data compression, coding and image recognition. In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.Comment: 14 pages (single column), 6 figure

A novel double edge-triggered pulse-clocked TSPC D flip-flop for high-performance and low-power VLSI design applications

Clocking is an important aspect of digital VLSI system design. The design of high-performance and low-power clocked storage elements is essential and critical to achieving maximum levels of performance and reliability in modern VLSI systems such as Systems on Chips (SoCs). In this thesis, a pulse-clocked double edge-triggered D-flip-flop (PDET) is proposed. PDET uses a new split-output true single-phase clocked (TSPC) latch and when clocked by a short pulse train acts like a double edge-triggered flip-flop. The P-type version of the new TSPC split-output latch is compared with existing TSPC split-output latches in terms of robustness, area, and power efficiency at high-speeds. It is shown that the new split-output latch is more area-power efficient, and significantly more robust, than the existing split-output CMOS latches. The novel double edge-triggered flip-flop uses only eight transistors with only one N-type transistor being clocked. Compared to other double edge-triggered flip-flops, PDET offers advantages in terms of speed, power, and area. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Period-Power product is reduced by 56%-63% compared to other double edge-triggered flip-flops. Simulations are performed using HSPICE in CMOS 0.5 om technology. This design is suitable for high-speed, low-power CMOS VLSI design applications

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals