Liquid and back gate coupling effect: towards biosensing with lowest detection limit

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimisation of signal-to-noise ratio in sub-threshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.Comment: 18 pages, 6 figure

A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.Comment: Article submitted to Nano Letter

Device modelling for bendable piezoelectric FET-based touch sensing system

Flexible electronics is rapidly evolving towards devices and circuits to enable numerous new applications. The high-performance, in terms of response speed, uniformity and reliability, remains a sticking point. The potential solutions for high-performance related challenges bring us back to the timetested silicon based electronics. However, the changes in the response of silicon based devices due to bending related stresses is a concern, especially because there are no suitable models to predict this behavior. This also makes the circuit design a difficult task. This paper reports advances in this direction, through our research on bendable Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) based touch sensors. The analytical model of POSFET, complimented with Verilog-A model, is presented to describe the device behavior under normal force in planar and stressed conditions. Further, dynamic readout circuit compensation of POSFET devices have been analyzed and compared with similar arrangement to reduce the piezoresistive effect under tensile and compressive stresses. This approach introduces a first step towards the systematic modeling of stress induced changes in device response. This systematic study will help realize high-performance bendable microsystems with integrated sensors and readout circuitry on ultra-thin chips (UTCs) needed in various applications, in particular, the electronic skin (e-skin)

Trick or Heat? Manipulating Critical Temperature-Based Control Systems Using Rectification Attacks

Temperature sensing and control systems are widely used in the closed-loop control of critical processes such as maintaining the thermal stability of patients, or in alarm systems for detecting temperature-related hazards. However, the security of these systems has yet to be completely explored, leaving potential attack surfaces that can be exploited to take control over critical systems. In this paper we investigate the reliability of temperature-based control systems from a security and safety perspective. We show how unexpected consequences and safety risks can be induced by physical-level attacks on analog temperature sensing components. For instance, we demonstrate that an adversary could remotely manipulate the temperature sensor measurements of an infant incubator to cause potential safety issues, without tampering with the victim system or triggering automatic temperature alarms. This attack exploits the unintended rectification effect that can be induced in operational and instrumentation amplifiers to control the sensor output, tricking the internal control loop of the victim system to heat up or cool down. Furthermore, we show how the exploit of this hardware-level vulnerability could affect different classes of analog sensors that share similar signal conditioning processes. Our experimental results indicate that conventional defenses commonly deployed in these systems are not sufficient to mitigate the threat, so we propose a prototype design of a low-cost anomaly detector for critical applications to ensure the integrity of temperature sensor signals.Comment: Accepted at the ACM Conference on Computer and Communications Security (CCS), 201

Neuro-memristive Circuits for Edge Computing: A review

The volume, veracity, variability, and velocity of data produced from the ever-increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure. Increasing the data processing capability of edge computing devices at lower power requirements can reduce several overheads for cloud computing solutions. This paper provides the review of neuromorphic CMOS-memristive architectures that can be integrated into edge computing devices. We discuss why the neuromorphic architectures are useful for edge devices and show the advantages, drawbacks and open problems in the field of neuro-memristive circuits for edge computing

A Robust Analog VLSI Reichardt Motion Sensor

Silicon imagers with integrated motion-detection circuitry have been developed and tested for the past 15 years. Many previous circuits estimate motion by identifying and tracking spatial or temporal features. These approaches are prone to failure at low SNR conditions, where feature detection becomes unreliable. An alternate approach to motion detection is an intensity-based spatiotemporal correlation algorithm, such as the one proposed by Hassenstein and Reichardt in 1956 to explain aspects of insect vision. We implemented a Reichardt motion sensor with integrated photodetectors in a standard CMOS process. Our circuit operates at sub-microwatt power levels, the lowest reported for any motion sensor. We measure the effects of device mismatch on these parallel, analog circuits to show they are suitable for constructing 2-D VLSI arrays. Traditional correlation-based sensors suffer from strong contrast dependence. We introduce a circuit architecture that lessens this dependence. We also demonstrate robust performance of our sensor to complex stimuli in the presence of spatial and temporal noise

CMOS IMAGE SENSORS FOR LAB-ON-A-CHIP MICROSYSTEM DESIGN

The work described herein serves as a foundation for the development of CMOS imaging in lab-on-a-chip microsystems. Lab-on-a-chip (LOC) systems attempt to emulate the functionality of a cell biology lab by incorporating multiple sensing modalidites into a single microscale system. LOC are applicable to drug development, implantable sensors, cell-based bio-chemical detectors and radiation detectors. The common theme across these systems is achieving performance under severe resource constraints including noise, bandwidth, power and size. The contributions of this work are in the areas of two core lab-on-a-chip imaging functions: object detection and optical measurements