Electrostatic Discharge Implantation to Improve Machine-Model ESD Robustness of Stacked NMOS in Mixed-Voltage I/O Interface Circuits

A novel electrostatic discharge (ESD) implantation method is proposed to significantly improve machinemodel (MM) ESD robustness of NMOS device in stacked configuration (stacked NMOS). By using this ESD implantation method, the ESD current is discharged far away from the surface channel of NMOS, therefore the stacked NMOS in the mixed-voltage I/O interface can sustain a much higher ESD level, especially under the MM ESD stress. The MM ESD robustness of the stacked NMOS with a device dimension of W/L=300µm/0.5µm for each NMOS has been successfully improved from the original 358V to become 491V in a 0.25-µm CMOS process. This ESD implantation method with the n-type impurity is fully process-compatible to general sub-quarter-micron CMOS processes. 1

CDM Robust & Low Noise ESD protection circuits

In spite of significant progress during last couple of decades, ESD still affects production yields, manufacturing costs, product quality, product reliability and profitability. The objective of an ESD protection circuit is to create a harmless shunting path for the static electricity before it damages the sensitive electronic circuits. As the devices are scaling down, while ESD energy remains the same, VLSIs are becoming more vulnerable to ESD stress. This higher susceptibility to ESD damage is due to thinner gate oxides and shallower junctions. Furthermore, higher operating frequency of the scaled technologies enforces lower parasitic capacitance of the ESD protection circuits. Hence, increasing the robustness of the ESD protection circuits with minimum additional parasitic capacitance is the main challenge in state of the art CMOS processes. Furthermore with scaling, the integration of analog blocks such as ADC, PLL’s, DLL’s, oscillator etc. on digital chips has provided cheap system on chip (SOC) solutions. However, when analog and digital chip are combined into single mixed-signal chip, on-chip noise coupling from the digital to the analog circuitry through ESD protection circuits becomes a big concern. Thus, increasing supply noise isolation while ensuring the ESD protection robustness is also a big challenge. In this thesis, several ESD protection circuits and devices have been proposed to address the critical issues like increased leakage current, slower turn-on time of devices, increased susceptibility to power supply isolation etc. The proposed ESD protection circuits/devices have been classified into two categories: Pad based ESD protection in which the ESD protection circuits are placed in the I/O pads, and Rail based ESD in which ESD protection circuit is placed between power supplies. In our research, both these aspects have been investigated. The Silicon Controlled Rectifier (SCR) based devices have been used for Pad ESD protection as they have highest ESD protection level per unit area. Two novel devices Darlington based SCR (DSCR) and NMOS Darlington based SCR (NMOS-DSCR) having faster turn-on time, lower first breakdown voltage and low capacitance have been proposed. The transient clamps have been investigated and optimized for Rail based ESD protection. In this research, we have addressed the issue of leakage current in transient clamps. A methodology has been purposed to reduce the leakage current by more than 200,000 times without having major impact on the ESD performance. Also, the issue of noise coupling from digital supply to analog supply through the ESD protection circuits has been addressed. A new transient clamp has been proposed to increase the power supply noise isolation. Finally, a new methodology of placement of analog circuit with respect to transient clamp has been proposed to further increase the power supply noise isolation

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

Towards the Design of Robust High-Speed and Power Efficient Short Reach Photonic Links

In 2014, approximately eight trillion transistors were fabricated every second thanks to improvements in integration density and fabrication processes. This increase in integration and functionality has also brought about the possibility of system on chip (SoC) and high-performance computing (HPC). Electrical interconnects presently dominate the very-short reach interconnect landscape (< 5 cm) in these applications. This, however, is expected to change. These interconnects' downfall will be caused by their need for impedance matching, limited pin-density and frequency dependent loss leading to intersymbol interference. In an attempt to solve this, researchers have increasingly explored integrated silicon photonics as it is compatible with current CMOS processes and creates many possibilities for short-reach applications. Many see optical interconnects as the high-speed link solution for applications ranging from intra-data center (~200 m) down to module or even chip scales (< 2 cm). The attractive properties of optical interconnects, such as low loss and multiplexing abilities, will enable such things as Exascale high-performance computers of the future (equal to 10^18 calculations per second). In fact, forecasts predict that by 2025 photonics at the smallest levels of the interconnect hierarchy will be a reality. This thesis presents three novel research projects, which all work towards increasing robustness and cost-efficiency in short-reach optical links. It discusses three parts of the optical link: the interconnect, the receiver and the photodiode. The first topic of this thesis is exploratory work on the use of an optical multiplexing technique, mode-division multiplexing (MDM), to carry multiple data lanes along with a forwarded clock for very short-reach applications. The second topic discussed is a novel reconfigurable CMOS receiver proposed as a method to map a clock signal to an interconnect lane in an MDM source-synchronous link with the lowest optical crosstalk. The receiver is designed as a method to make electronic chips that suit the needs of optical ones. By leveraging the more robust electronic integrated circuit, link solutions can be tuned to meet the needs of photonic chips on a die by die basis. The third topic of this thesis proposes a novel photodetector which uses photonic grating couplers to redirect vertical incident light to the horizontal direction. With this technique, the light is applied along the entire length of a p-n junction to improve the responsivity and speed of the device. Experimental results for this photodetector at 35 Gb/s are published, showing it to be the fastest all-silicon based photodetector reported in the literature at the time of publication

Monolithic CMOS photoluminescence lifetime microsensors for oxygen concentration measurement

The oxygen partial pressure within a cancer tumour is a key factor which determines the prognosis and the effectiveness of cancer treatments; particularly radiotherapy. Due to the unregulated growth of cancer cells, the supporting vasculature is incapable of supplying the entire tumour. This leads to inhomogeneities that vary both spatially, as some parts of the tumour are not serviced by the blood supply; and temporally as the vasculature formed can be temporary and disappear and reform due to a number of factors. The lack of oxygen within a tumour is known as hypoxia wherein a cell - or in the case of a cancer tumour, a grouping of cells - is devoid of oxygen due to a lack of blood supply.The ability to measure and monitor the levels of hypoxia within a cancer tumour is thus important to ensure that cancer treatments are given at periods of maximum efficacy wherein hypoxia is least present. Measurement of tumour hypoxia is currently typically achieved through the use of one-off imaging methods such as PET or MRI scans and thus cannot be used for continuous monitoring. The Implantable Microsystems for Personalised Anti-Cancer Therapy (IMPACT) project aims to allow continuous monitoring of the tumour microenvironment via miniaturised oxygen sensors, with the main focus being the use of electrochemical sensors. As driven by the main goal of the IMPACT project, this PhD work presents the development of a novel microsensor integrable and manufactured with standard CMOS fabrication technologies capable of monitoring of oxygen concentrations via measurement of the photoluminescence (PL) emission lifetime of oxygen-sensitive luminophores. Three iterations of CMOS microchips were developed in the High-Voltage austriamicrosystems 0.35 µm technology node over the course of the PhD to reach a functioning photoluminescence lifetime microsensor (PLµS); with each chip contributing to a better understanding of the overall PLµS design.The developed PLµS chip is the first-of-its-kind monolithic photoluminescence microsensor. It consists of silicon light emitting diodes (SiLED) for PL excitation, silicon photon avalanche diodes (SPAD) for detection of the emission, and the associated switching and driving circuitry required for PL lifetime measurement. This developed PLµS pixel is 125×125µm2 and can be modularly added to other CMOS microsystems in the same process.To functionalise the PLµS for oxygen concentration measurements, platinum octaethylporphyrin (PtOEP) is immobilised in polystyrene to form an oxygen sensitive PL material which is deposited directly onto the PLµS. This work demonstrates the capability of the PLµS to measure the photoluminescence lifetimes of the PtOEP-PS film when exposed to gaseous oxygen concentrations of 0% to 21%. While all PLµS measurements were done ex-vivo, the tested concentration ranges cover all possible physiologic oxygen concentrations including those associated with tumour hypoxia. Continuation of this work would be the use of the PLµS for testing of biological samples, and the extension of the capabilities of the PLµS pixel itself for the measurement of other optical biomarkers

Design and characterisation of monolithic CMOS detectors for high energy particle physics and SEU radiation tests for ATLAS Inner Tracker Upgrade readout chip

This thesis covers the characterisation results and the design of monolithic CMOS detectors designed in TowerJazz 180nm CMOS technology for High Energy Particle Physics applications. Three different detectors have been studied the MALTA, the Mini-MALTA and the MALTA2. The MALTA sensor showed some efficiency losses at the corners of the pixels after irradiation, which meant that it was not suitable for the radiation environments in which it was supposed to be installed. Therefore, the front-end electronics and the fabrication process were modified to overcome this issue. The Mini-MALTA prototype was designed including the above mentioned improvements, fabricated and fully characterised. Finally taking into account all the knowledge acquired during these years of developments another large scale sensor the MALTA2 has been produced which should be radiation tolerant and have very good time resolution. The description and studies of the different architectures used in this family of detectors are covered and a simulation to estimate the bandwidth capabilities have been reported. Furthermore, this work will present characterisation of single event effects in the ITkPixV1, the prototype version of the ATLAS Inner Tracker Upgrade chip for the High Luminosity LHC. Measurements were made in testbeam campaigns with high energy ions and protons to evaluate the level of single event effects in the chip

Low phase noise 2 GHz Fractional-N CMOS synthesizer IC

Low noise low division 2 GHz RF synthesizer integrated circuits (ICs) are conventionally implemented in some form of HBT process such as SiGe or GaAs. The research in this dissertation differs from convention, with the aim of implementing a synthesizer IC in a more convenient, low-cost Si-based CMOS process. A collection of techniques to push towards the noise and frequency limits of CMOS processes, and possibly other IC processes, is then one of the research outcomes. In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fractional-N topology to achieve increased frequency tuning resolution. The primary N-divider was implemented utilising current mode logic (CML) and the fractional accumulator utilising conventional CMOS. Both a conventional CMOS phase frequency detector (PFD) and a CML PFD were implemented for benchmarking purposes. A custom-built 4.4 GHz synthesizer circuit employing the IC was used to validate the research. In the 4.4 GHz synthesizer circuit, the prototype IC achieved a measured in-band phase noise plateau of L( f ) = -113 dBc/Hz at a 100 kHz frequency offset, which equates to a figure of merit (FOM) of -225 dBc/Hz. The FOM compares well with existing, but expensive, SiGe and GaAs HBT processes. Total IC power dissipation was 710 mW, which is considerably less than commercially available GaAs designs. The complete synthesizer IC was implemented in Austriamicrosystems‟ (AMS) 0.35 μm CMOS process and occupies an area of 3.15 x 2.18 mm2.Dissertation (MEng)--University of Pretoria, 2010.Electrical, Electronic and Computer Engineeringunrestricte

Crystal-Less RF Communication Integrated Circuits for Wireless Sensor Networks.

The evolution of computing devices has changed daily life significantly over the past decades, and it is still advancing towards pervasive and ubiquitous networks. At each step, the volume shrinks by 2-3 orders of magnitude while the functionality and computing power remains constant or increases. Wireless sensor networks (WSN) are perceived as the next big step of computing technology for a variety of applications, including environmental sensing, health monitoring, un-obtrusive surveillance and invisible labeling. With thin-film micro-battery technology and CMOS scaling, we can now envision complete sensor nodes with cubic-mm form factors. As node volume reduces, external components like a crystal frequency reference, which does not scale with frequency or process, becomes one of the bottlenecks of realizing cubic-mm WSN node devices. This dissertation covers several aspects of the energy and integration challenges associated with cubic-mm WSN nodes without crystal references. Several new compact and low-power RF circuits for the synchronization and communication of WSN nodes are proposed and discussed. A 60GHz antenna-referenced frequency-locked loop (FLL) using an on-chip patch antenna as both the radiator and the frequency reference has been demonstrated for RF synchronization. The FLL, targeting communication of non-coherent energy detection systems, provides adequate frequency accuracy without crystal references. A 10GHz ultra-wideband (UWB) crystal-less transmitter with an on-chip monopole antenna has also been demonstrated. It operates over the supply voltage range of a micro-battery; generate tunable pulse durations and center frequencies, and lives on an on-chip local decoupling capacitor only. A 1MHz temperature-compensated relaxation oscillator is also proposed in the dissertation for baseband data synchronization. With the modified RC network of the conventional relaxation oscillator, the transfer function of the network has a transmission zero, introducing an additional degree-of-freedom for temperature compensation design. Finally, a 60GHz transmit/receive (T/R) switch-less antenna front-end using an on-chip patch antenna is presented, which has an in-band isolation inherited from the standing wave pattern without implementing a T/R switch. The research projects have explored the circuit design techniques and system integration for cubic-mm energy-constrained devices, achieving both long lifetimes and small volumes for WSN applications.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/99763/1/kkhuang_1.pd