Criticality Aware Soft Error Mitigation in the Configuration Memory of SRAM based FPGA

Efficient low complexity error correcting code(ECC) is considered as an effective technique for mitigation of multi-bit upset (MBU) in the configuration memory(CM)of static random access memory (SRAM) based Field Programmable Gate Array (FPGA) devices. Traditional multi-bit ECCs have large overhead and complex decoding circuit to correct adjacent multibit error. In this work, we propose a simple multi-bit ECC which uses Secure Hash Algorithm for error detection and parity based two dimensional Erasure Product Code for error correction. Present error mitigation techniques perform error correction in the CM without considering the criticality or the execution period of the tasks allocated in different portion of CM. In most of the cases, error correction is not done in the right instant, which sometimes either suspends normal system operation or wastes hardware resources for less critical tasks. In this paper,we advocate for a dynamic priority-based hardware scheduling algorithm which chooses the tasks for error correction based on their area, execution period and criticality. The proposed method has been validated in terms of overhead due to redundant bits, error correction time and system reliabilityComment: 6 pages, 8 figures, conferenc

Havens: Explicit Reliable Memory Regions for HPC Applications

Supporting error resilience in future exascale-class supercomputing systems is a critical challenge. Due to transistor scaling trends and increasing memory density, scientific simulations are expected to experience more interruptions caused by transient errors in the system memory. Existing hardware-based detection and recovery techniques will be inadequate to manage the presence of high memory fault rates. In this paper we propose a partial memory protection scheme based on region-based memory management. We define the concept of regions called havens that provide fault protection for program objects. We provide reliability for the regions through a software-based parity protection mechanism. Our approach enables critical program objects to be placed in these havens. The fault coverage provided by our approach is application agnostic, unlike algorithm-based fault tolerance techniques.Comment: 2016 IEEE High Performance Extreme Computing Conference (HPEC '16), September 2016, Waltham, MA, US

Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Exploration and Analysis of Combinations of Hamming Codes in 32-bit Memories

Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such as Error Correction Codes (ECCs) to maintain information integrity. Although there are several studies of ECC usage in spatial application memories, there is still no consensus in choosing the type of ECC as well as its organization in memory. This work analyzes some configurations of the Hamming codes applied to 32-bit memories in order to use these memories in spatial applications. This work proposes the use of three types of Hamming codes: Ham(31,26), Ham(15,11), and Ham(7,4), as well as combinations of these codes. We employed 36 error patterns, ranging from one to four bit-flips, to analyze these codes. The experimental results show that the Ham(31,26) configuration, containing five bits of redundancy, obtained the highest rate of simple error correction, almost 97\%, with double, triple, and quadruple error correction rates being 78.7\%, 63.4\%, and 31.4\%, respectively. While an ECC configuration encompassed four Ham(7.4), which uses twelve bits of redundancy, only fixes 87.5\% of simple errors

MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction

(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.[EN] Static random access memories (SRAMs) are key in electronic systems. They are used not only as standalone devices, but also embedded in application specific integrated circuits. One key challenge for memories is their susceptibility to radiation-induced soft errors that change the value of memory cells. Error correction codes (ECCs) are commonly used to ensure correct data despite soft errors effects in semiconductor memories. Single error correction/double error detection (SEC-DED) codes have been traditionally the preferred choice for data protection in SRAMs. During the last decade, the percentage of errors that affect more than one memory cell has increased substantially, mainly due to multiple cell upsets (MCUs) caused by radiation. The bits affected by these errors are physically close. To mitigate their effects, ECCs that correct single errors and double adjacent errors have been proposed. These codes, known as single error correction/double adjacent error correction (SEC-DAEC), require the same number of parity bits as traditional SEC-DED codes and a moderate increase in the decoder complexity. However, MCUs are not limited to double adjacent errors, because they affect more bits as technology scales. In this brief, new codes that can correct triple adjacent errors and 3-bit burst errors are presented. They have been implemented using a 45-nm library and compared with previous proposals, showing that our codes have better error protection with a moderate overhead and low redundancy.This work was supported in part by the Universitat Politecnica de Valencia, Valencia, Spain, through the DesTT Research Project under Grant SP20120806; in part by the Spanish Ministry of Science and Education under Project AYA-2009-13300-C03; in part by the Arenes Research Project under Grant TIN2012-38308-C02-01; and in part by the Research Project entitled Manufacturable and Dependable Multicore Architectures at Nanoscale within the framework of COST ICT Action under Grant 1103.Saiz-Adalid, L.; Reviriego, P.; Gil, P.; Pontarelli, S.; Maestro, JA. (2015). MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23(10):2332-2336. https://doi.org/10.1109/TVLSI.2014.2357476S23322336231