2,435 research outputs found

    Traceable Standard for Sub - 100nm Metrology

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    As we approach the 65nm technological node, transistor gates with dimensions of the order of 40nm are being manufactured. As the device performance is directly related to the dimensions of the gate, critical dimension (CD) control becomes an important part of the fabrication process. Characterization of these small feature size, generally referred to as Metrology, is an indispensable ingredient of the semiconductor manufacturing processes. Metrology relies not only on the precision, but also the accuracy of commercially used metrology tools like the CD-SEM. To facilitate the magnification calibration of the CD-SEM, an easy access to standard reference artifact traceable to international specifications is an added advantage. Considerable literature is available for CD-SEM, which relies on in-house artifacts or general test objects. The absence of commercially available artifacts hinders evaluation of different CD-SEM. The objective of this abstract is to introduce the fabrication and characterization of artifacts for the sub-100nm metrology, which can be made available in wafer form at low cost. In this work, artifacts have been designed and fabricated for precise magnification calibration of the CD-SEM. The designing of the artifacts takes into account the proximity effect, a problem associated with the e-beam exposure, to produce dense grid type structure in the sub-100nm region. The structures are fabricated using the e-beam lithography tool, operated at 50KeV. The artifacts have been fabricated on a thin layer of negative resist HSQ spun on silicon substrate. Subsequent development in 0.26N TMAH gives a structure on silicon wafer, thereby eliminating contamination issues. Furthermore, characterization of the artifacts for line pitch determination is carried out using “Measure” (Spectel Corp.), which provides an absolute calibration of the image pixel size that can then be used to measure other features. The low values for the line edge roughness (LER) further facilitate precise linewidth metrology.\u3e/p\u3

    Submicron Structures Technology and Research

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    Contains reports on fifteen research projects.Joint Services Electronics Program (Contract DAALO3-86-K-0002)National Science Foundation (Grant ECS 87-09806)Semiconductor Research Corporation (Contract 87-SP-080)National Science Foundation (Grant ECS 85-03443)U.S. Air Force - Office of Scientific Research (Grant AFOSR 85-0376)National Science Foundation (Grant ECS 85-06565)U.S. Air Force - Office of Scientific Research (Grant AFOSR 85-0154)Lawrence Livermore National Laboratory (Subcontract 2069209)National Aeronautics and Space Adminstration (Grant NGL22-009-683)Collaboration with KMS Fusion, Inc

    Progress in coherent lithography using table-top extreme ultraviolet lasers

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    2016 Spring.Includes bibliographical references.Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography

    Physics and fabrication of quasi-one-dimensional conductors

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    Includes bibliographical references (p. 128-134).Supported in part by the Joint Services Electronics Program. DAAL03-92-C-0001 Supported in part by the National Science Foundation. ECS 90-16437 Supported in part by the U.S. Air Force Office of Scientific Research.Reza A. Ghanbari

    Physics and fabrication of quasi-one-dimensional conductors

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1993.Includes bibliographical references (leaves 128-134).by Reza A. Ghanbari.Ph.D

    Nanofocusing Refractive X-Ray Lenses

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    This thesis is concerned with the optimization and development of the production of nanofocusing refractive x-ray lenses. These optics made of either silicon or diamond are well-suited for high resolution x-ray microscopy. The goal of this work is the design of a reproducible manufacturing process which allows the production of silicon lenses with high precision, high quality and high piece number. Furthermore a process for the production of diamond lenses is to be developed and established. In this work, the theoretical basics of x-rays and their interaction with matter are described. Especially, aspects of synchrotron radiation are emphasized. Important in x-ray microscopy are the different optics. The details, advantages and disadvantages, in particular those of refractive lenses are given. To achieve small x-ray beams well beyond the 100nm range a small focal length is required. This is achieved in refractive lenses by moving to a compact lens design where several single lenses are stacked behind each other. The, so-called nanofocusing refractive lenses (NFLs) have a parabolic cylindrical shape with lateral structure sizes in the micrometer range. NFLs are produced by using micro-machining techniques. These micro-fabrication processes and technologies are introduced. The results of the optimization and the final fabrication process for silicon lenses are presented. Subsequently, two experiments that are exemplary for the use of NFLs, are introduced. The first one employs a high-resolution scanning fluorescence mapping of a geological sample, and the second one is a coherent x-ray diffraction imaging (CXDI) experiment. CXDI is able to reconstruct the illuminated object from recorded coherent diffraction patterns. In a scanning mode, referred to as ptychography, this method is even able to reconstruct the illumination and the object simultaneously. Especially the reconstructed illumination and the possibility of computed propagation of the wavefield along the focused beam yields findings about the optic used. The collected data give interesting information about the lenses and their aberrations. Comparison of simulated and measured data shows good agreement. Following this, the fabrication process of diamond lenses is described. Diamond with its extraordinary properties is well-suited as lens material for refractive lenses. Finally, a concluding overview of the present and future work of nanofocusing lenses is given.Diese Dissertation beschäftigt sich mit der Entwicklung und Optimierung der Herstellungsprozesse von refraktiven nanofokussierenden Röntgenlinsen. Diese aus Silizium oder Diamant hergestellten Optiken, sind hervorragend für hochauflösende Röntgen\-mikroskopie geeignet. Ziel dieser Arbeit ist es, einen reproduzierbaren Herstellungsprozess zu erarbeiten, der es erlaubt, Siliziumlinsen von hoher Präzision, Qualität und Quantität zu fertigen. Zusätzlich soll ein Prozess für Diamantlinsen entwickelt und etabliert werden. In der folgenden Arbeit werden die theoretischen Grundlagen von Röntgenstrahlung und deren Wechselwirkung mit Materie beschrieben. Spezielle Aspekte der Synchrotronstrahlung werden hervorgehoben. Wichtig im Zusammenhang mit Röntgenmikroskopie sind die verschieden Optiken. Deren Details, Vor- und Nachteile, insbesondere die der brechenden Linsen, werden genannt. Zur Erzeugung fein gebündelter Röntgenmikrostrahlen im Bereich unter 100nm lateraler Größe benötigt man sehr kurze Brennweiten. Mit brechenden Linsen lässt sich dieses mittels eines kompakten Linsendesigns von vielen hintereinander gestapelten Einzellinsen realisieren. Die so genannten refraktiven nanofokussierenden Linsen (NFLs) besitzen eine parabolische Zylinderform mit lateralen Strukturgrößen im Mikrometerbereich. NFLs werden mittels spezieller Technologien der Mikroprozessierung hergestellt. Diese Mikrostrukturierungsverfahren werden mit ihren jeweiligen Prozessschritten und zugehörenden Technologien vorgestellt. Die Ergebnisse der Optimierung und der endgültige Mikrostrukturierungsprozess für Siliziumlinsen werden dargelegt. Im Anschluss daran werden zwei Experimente erläutert, die beispielhaft für die Anwendung von NFLs stehen. Ersteres ist ein ortsaufgelöstes Fluoreszenzrasterexperiment einer geologischen Probe und das zweite ein kohärentes Röntgen-Beugungsexperiment (CXDI). CXDI ist in der Lage, aus kohärent aufgenommen Beugungsbildern das beleuchtete Objekt zu rekonstruieren. Kombiniert mit einem rasternden Verfahren, welches Ptychographie genannt wird, ist diese Methode in der Lage, die Beleuchtungsfunktion und das Objekt gleichzeitig zu rekonstruieren. Besonderes die rekonstruierte Beleuchtungsfunktion und die Möglichkeit der computergestützten Propagation des Wellenfeldes entlang des fokussierten Strahls, geben aufschlussreiche Informationen über die verwendete Optik. Neue Erkenntnisse über die Linsen und deren Aberrationen können so gewonnen werden. Vergleiche von simulierten mit gemessenen Daten zeigen gute Übereinstimmung. Daran anschließend erfolgt die Beschreibung der Entwicklung eines Fabrikationsprozess für Diamantlinsen. Diamant mit seinen außergewöhnlichen Materialeigenschaften ist besonders gut als Linsenmaterial für refraktive Röntgenlinsen geeignet. Abschliessend wird ein zusammenfassender Überblick über die derzeitigen und die zu erwartenden Entwicklungen bei refraktiven Linsen gegeben

    Empirical Analysis of Electron Beam Lithography Optimization Models from a Pragmatic Perspective

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    Electron Beam (EB) lithography is a process of focussing electron beams on silicon wafers to design different integrated circuits (ICs). It uses an electron gun, a blanking electrode, multiple electron lenses, a deflection electrode, and control circuits for each of these components. But the lithography process causes critical dimension overshoots, which reduces quality of the underlying ICs. This is caused due to increase in beam currents, frequent electron flashes, and reducing re-exposure of chip areas. Thus, to overcome these issues, researchers have proposed a wide variety of optimization models, each of which vary in terms of their qualitative & quantitative performance. These models also vary in terms of their internal operating characteristics, which causes ambiguity in identification of optimum models for application-specific use cases. To reduce this ambiguity, a discussion about application-specific nuances, functional advantages, deployment-specific limitations, and contextual future research scopes is discussed in this text. Based on this discussion, it was observed that bioinspired models outperform linear modelling techniques, which makes them highly useful for real-time deployments. These models aim at stochastically evaluation of optimum electron beam configurations, which improves wafer’s quality & speed of imprinting when compared with other models. To further facilitate selection of these models, this text compares them in terms of their accuracy, throughput, critical dimensions, deployment cost & computational complexity metrics. Based on this discussion, researchers will be able to identify optimum models for their performance-specific use cases. This text also proposes evaluation of a novel EB Lithography Optimization Metric (EBLOM), which combines multiple performance parameters for estimation of true model performance under real-time scenarios. Based on this metric, researchers will be able to identify models that can perform optimally with higher performance under performance-specific constraints

    Submicron and Nanometer Structures Technology and Research

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    Contains reports on twenty research projects and a list of publications.Defense Advanced Research Projects Agency Contract N00019-92-K-0021Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 90-16437U.S. Army Research Office Grant DAAL03-92-G-0291IBM CorporationU.S. Air Force - Office of Scientific Research Grant F49620-92-J-0064National Science Foundation Grant DMR 87-19217National Science Foundation Grant DMR 90-22933Defense Advanced Research Projects Agency Consortium for Superconducting ElectronicsNational Aeronautics and Space Administration Contract NAS8-36748National Aeronautics and Space Administration Grant NAGW-200

    Inorganic x-ray mask technology for quantum-effect devices

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    Includes bibliographical references (p. 116-123).Supported in part by the Joint Services Electronics Program. DAAL03-92-C-0001 Supported in part by the National Science Foundation. ECS 90-16437 Supported in part by the U.S. Air Force Office of Scientific Research, and the Defense Advanced Research Projects Agency. N00019-92-K-0021William Chu
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