Interminiband Rabi oscillations in biased semiconductor superlattices

Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.Comment: 13 pages, 16 figure

Magnetic Miniband Structure and Quantum Oscillations in Lateral Semiconductor Superlattices

We present fully quantum-mechanical magnetotransport calculations for short-period lateral superlattices with one-dimensional electrostatic modulation. A non-perturbative treatment of both magnetic field and modulation potential proves to be necessary to reproduce novel quantum oscillations in the magnetoresistance found in recent experiments in the resistance component parallel to the modulation potential. In addition, we predict oscillations of opposite phase in the component perpendicular to the modulation not yet observed experimentally. We show that the new oscillations originate from the magnetic miniband structure in the regime of overlapping minibands.Comment: 6 pages with 4 figure

Interlayer hybridization and moir\'e superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides

Geometrical moir\'e patterns, generic for almost aligned bilayers of two-dimensional (2D) crystals with similar lattice structure but slightly different lattice constants, lead to zone folding and miniband formation for electronic states. Here, we show that moir\'e superlattice (mSL) effects in $\mathrm{MoSe}_2/\mathrm{WS}_2$ and $\mathrm{MoTe}_2/\mathrm{MoSe}_2$ heterobilayers that feature alignment of the band edges are enhanced by resonant interlayer hybridization, and anticipate similar features in twisted homobilayers of TMDs, including examples of narrow minibands close to the actual band edges. Such hybridization determines the optical activity of interlayer excitons in transition-metal dichalcogenide (TMD) heterostructures, as well as energy shifts in the exciton spectrum. We show that the resonantly hybridized exciton (hX) energy should display a sharp modulation as a function of the interlayer twist angle, accompanied by additional spectral features caused by umklapp electron-photon interactions with the mSL. We analyze the appearance of resonantly enhanced mSL features in absorption and emission of light by the interlayer exciton hybridization with both intralayer A and B excitons in $\mathrm{MoSe}_2/\mathrm{WS}_2$, $\mathrm{MoTe}_2/\mathrm{MoSe}_2$, $\mathrm{MoSe}_2/\mathrm{MoS}_2$, $\mathrm{WS}_2/\mathrm{MoS}_2$, and $\mathrm{WSe}_2/\mathrm{MoSe}_2$.Comment: Final published version, with updated title and abstract, minor corrections to equations, and 4 new figures adde

Giant oscillations in a triangular network of one-dimensional states in marginally twisted graphene

The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research.Comment: 11 pages, 8 figure

Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moir\'e Superlattice

Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (TLG/hBN) moir\'e superlattice provides an attractive platform to explore Chern insulators because it features nearly flat moir\'e minibands with a valley-dependent electrically tunable Chern number. Here we report the experimental observation of a correlated Chern insulator in a TLG/hBN moir\'e superlattice. We show that reversing the direction of the applied vertical electric field switches TLG/hBN's moir\'e minibands between zero and finite Chern numbers, as revealed by dramatic changes in magneto-transport behavior. For topological hole minibands tuned to have a finite Chern number, we focus on 1/4 filling, corresponding to one hole per moir\'e unit cell. The Hall resistance is well quantized at h/2e2, i.e. C = 2, for |B| > 0.4 T. The correlated Chern insulator is ferromagnetic, exhibiting significant magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up exciting opportunities for discovering novel correlated topological states, possibly with novel topological excitations, in nearly flat and topologically nontrivial moir\'e minibands.Comment: 16 pages, 4 figures, and 2 extended figure

Hierarchy of gaps and magnetic minibands in graphene in the presence of the Abrikosov vortex lattice

We determine the structure of band and gaps in graphene encapsulated in hexagonal boron nitride and subjected to magnetic field of Abrikosov lattice of vortices in the underlying superconducting film. The spectrum features one non-dispersive magnetic miniband at zero energy, separated by the largest gaps in the miniband spectrum from a pair of minibands resembling slightly broadened first Landau levels in graphene, suggesting the persistence of $\nu = \pm 2$ quantum Hall effect states. Also, we identify occasional merging point of magnetic minibands which feature Dirac-type dispersion at the consecutive miniband edges.Comment: 5 pages, 3 figure

Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure

A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the C-4 symmetry of the 8-band k·p Hamiltonian with the strain taken into account via the continuum mechanical model. The operators representing symmetry group elements were represented in the plane wave basis and the group projectors were used to find the symmetry adapted basis in which the corresponding Hamiltonian matrix is block diagonal with four blocks of approximately equal size. The quantum number of total quasiangular momentum is introduced and the states are classified according to its value. Selection rules for interaction with electromagnetic field in the dipole approximation are derived. The method was applied to calculate electron and hole quasibound states in a periodic array of vertically stacked pyramidal self-assembled InAs/GaAs quantum dots for different values of the distance between the dots and external axial magnetic field. As the distance between the dots in an array is varied, an interesting effect of simultaneous change of ground hole state symmetry, type, and the sign of miniband effective mass is predicted. This effect is explained in terms of the change of biaxial strain. It is also found that the magnetic field splitting of Kramer's double degenerate states is most prominent for the first and second excited state in the conduction band and that the magnetic field can both separate otherwise overlapping minibands and concatenate otherwise nonoverlapping minibands