Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

Process-induced variability is a growing concern in the design of analog circuits, and in particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G communication systems. The RF and microwave (MW) technologies developed for the deployment of these communication systems exploit devices whose dimension is now well below 100 nm, featuring an increasing variability due to the fabrication process tolerances and the inherent statistical behavior of matter at the nanoscale. In this scenario, variability analysis must be incorporated into circuit design and optimization, with ad hoc models retaining a direct link to the fabrication process and addressing typical MMIC nonlinear applications like power amplification and frequency mixing. This paper presents a flexible procedure to extract black-box models from accurate physics-based simulations, namely TCAD analysis of the active devices and EM simulations for the passive structures, incorporating the dependence on the most relevant fabrication process parameters. We discuss several approaches to extract these models and compare them to highlight their features, both in terms of accuracy and of ease of extraction. We detail how these models can be implemented into EDA tools typically used for RF and MMIC design, allowing for fast and accurate statistical and yield analysis. We demonstrate the proposed approaches extracting the black-box models for the building blocks of a power amplifier in a GaAs technology for X-band applications

Breaking the challenge of signal integrity using time-domain spoof surface plasmon polaritons

In modern integrated circuits and wireless communication systems/devices, three key features need to be solved simultaneously to reach higher performance and more compact size: signal integrity, interference suppression, and miniaturization. However, the above-mentioned requests are almost contradictory using the traditional techniques. To overcome this challenge, here we propose time-domain spoof surface plasmon polaritons (SPPs) as the carrier of signals. By designing a special plasmonic waveguide constructed by printing two narrow corrugated metallic strips on the top and bottom surfaces of a dielectric substrate with mirror symmetry, we show that spoof SPPs are supported from very low frequency to the cutoff frequency with strong subwavelength effects, which can be converted to the time-domain SPPs. When two such plasmonic waveguides are tightly packed with deep-subwavelength separation, which commonly happens in the integrated circuits and wireless communications due to limited space, we demonstrate theoretically and experimentally that SPP signals on such two plasmonic waveguides have better propagation performance and much less mutual coupling than the conventional signals on two traditional microstrip lines with the same size and separation. Hence the proposed method can achieve significant interference suppression in very compact space, providing a potential solution to break the challenge of signal integrity

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

The Future of High Frequency Circuit Design

The cut-off wavelengths of integrated silicon transistors have exceeded the die sizes of the chips being fabricated with them. Combined with the ability to integrate billions of transistors on the same die, this size-wavelength cross-over has produced a unique opportunity for a completely new class of holistic circuit design combining electromagnetics, device physics, circuits, and communication system theory in one place. In this paper, we discuss some of these opportunities and their associated challenges in greater detail and provide a few of examples of how they can be used in practice

An automated N-port network analyzer for linear and non linear multi-port RF and digital circuits

A new automated N-port time and frequency domain network analyzer based on the microwave transition analyzer MTA, used as a high speed digital oscilloscope, has been developed. The validity of the developed system is demonstrated with number of experimental measurements on different multi-ports structures

Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

The development of micromachining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, a WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements on a gold-plated silicon waveguide show performance comparable to that of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems