Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Special Topics in Information Technology

This open access book presents thirteen outstanding doctoral dissertations in Information Technology from the Department of Electronics, Information and Bioengineering, Politecnico di Milano, Italy. Information Technology has always been highly interdisciplinary, as many aspects have to be considered in IT systems. The doctoral studies program in IT at Politecnico di Milano emphasizes this interdisciplinary nature, which is becoming more and more important in recent technological advances, in collaborative projects, and in the education of young researchers. Accordingly, the focus of advanced research is on pursuing a rigorous approach to specific research topics starting from a broad background in various areas of Information Technology, especially Computer Science and Engineering, Electronics, Systems and Control, and Telecommunications. Each year, more than 50 PhDs graduate from the program. This book gathers the outcomes of the thirteen best theses defended in 2019-20 and selected for the IT PhD Award. Each of the authors provides a chapter summarizing his/her findings, including an introduction, description of methods, main achievements and future work on the topic. Hence, the book provides a cutting-edge overview of the latest research trends in Information Technology at Politecnico di Milano, presented in an easy-to-read format that will also appeal to non-specialists

Three-Dimensional Processing-In-Memory-Architectures: A Holistic Tool For Modeling And Simulation

Die gemeinhin als Memory Wall bekannte, sich stetig weitende Leistungslücke zwischen Prozessor- und Speicherarchitekturen erfordert neue Konzepte, um weiterhin eine Skalierung der Rechenleistung zu ermöglichen. Da Speicher als die Beschränkung innerhalb einer Von-Neumann-Architektur identifiziert wurden, widmet sich die Arbeit dieser Problemstellung. Obgleich dreidimensionale Speicher zu einer Linderung der Memory Wall beitragen können, sind diese alleinig für die zukünftige Skalierung ungenügend. Aufgrund höherer Effizienzen stellt die Integration von Rechenkapazität in den Speicher (Processing-In-Memory, PIM) ein vielversprechender Ausweg dar, jedoch existiert ein Mangel an PIM-Simulationsmodellen. Daher wurde ein flexibles Simulationswerkzeug für dreidimensionale Speicherstapel geschaffen, welches zur Modellierung von dreidimensionalen PIM erweitert wurde. Dieses kann Speicherstapel wie etwa Hybrid Memory Cube standardkonform simulieren und bietet zugleich eine hohe Genauigkeit indem auf elementaren Datenpaketen in Kombination mit dem Hardware validierten Simulator BOBSim modelliert wird. Ein eigens entworfener Simulationstaktbaum ermöglicht zugleich eine schnelle Ausführung. Messungen weisen im funktionalen Modus eine 100-fache Beschleunigung auf, wohingegen eine Verdoppelung der Ausführungsgeschwindigkeit mit Taktgenauigkeit erzielt wird. Anhand eines eigens implementierten, binärkompatiblen GPU-Beschleunigers wird die Modellierung einer vollständig dreidimensionalen PIM-Architektur demonstriert. Dabei orientieren sich die maximalen Hardwareressourcen an einem PIM-Beschleuniger aus der Literatur. Evaluiert wird einerseits das GPU-Simulationsmodell eigenständig, andererseits als PIM-Verbund jeweils mit Hilfe einer repräsentativ gewählten, speicherbeschränkten geophysikalischen Bildverarbeitung. Bei alleiniger Betrachtung des GPU-Simulationsmodells weist dieses eine signifikant gesteigerte Simulationsgeschwindigkeit auf, bei gleichzeitiger Abweichung von 6% gegenüber dem Verilator-Modell. Nachfolgend werden innerhalb dieser Arbeit unterschiedliche Konfigurationen des integrierten PIM-Beschleunigers evaluiert. Je nach gewählter Konfiguration kann der genutzte Algorithmus entweder bis zu 140GFLOPS an tatsächlicher Rechenleistung abrufen oder eine maximale Recheneffizienz von synthetisch 30% bzw. real 24,5% erzielen. Letzteres stellt eine Verdopplung des Stands der Technik dar. Eine anknüpfende Diskussion erläutert eingehend die Resultate.The steadily widening performance gap between processor- and memory-architectures - commonly known as the Memory Wall - requires novel concepts to achieve further scaling in processing performance. As memories were identified as the limitation within a Von-Neumann-architecture, this work addresses this constraining issue. Although three-dimensional memories alleviate the effects of the Memory Wall, the sole utilization of such memories would be insufficient. Due to higher efficiencies, the integration of processing capacity into memories (so-called Processing-In-Memory, PIM) depicts a promising alternative. However, a lack of PIM simulation models still remains. As a consequence, a flexible simulation tool for three-dimensional stacked memories was established, which was extended for modeling three-dimensional PIM architectures. This tool can simulate stacked memories such as Hybrid Memory Cube standard-compliant and simultaneously offers high accuracy by modeling on elementary data packets (FLIT) in combination with the hardware validated BOBSim simulator. To this, a specifically designed simulation clock tree enables an rapid simulation execution. A 100x speed up in simulation execution can be measured while utilizing the functional mode, whereas a 2x speed up is achieved during clock-cycle accuracy mode. With the aid of a specifically implemented, binary compatible GPU accelerator and the established tool, the modeling of a holistic three-dimensional PIM architecture is demonstrated within this work. Hardware resources used were constrained by a PIM architecture from literature. A representative, memory-bound, geophysical imaging algorithm was leveraged to evaluate the GPU model as well as the compound PIM simulation model. The sole GPU simulation model depicts a significantly improved simulation performance with a deviation of 6% compared to a Verilator model. Subsequently, various PIM accelerator configurations with the integrated GPU model were evaluated. Depending on the chosen PIM configuration, the utilized algorithm achieves 140GFLOPS of processing performance or a maximum computing efficiency of synthetically 30% or realistically 24.5%. The latter depicts a 2x improvement compared to state-of-the-art. A following discussion showcases the results in depth