Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages

In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Effects of Humidity on the Electro-Optical-Thermal Characteristics of High-Power LEDs

LEDs are subjected to environments with high moisture in many applications. In this paper, the experiments reveal photometric and colorimetric degradation at high humidity. Corresponding spectral power analysis and parameter extraction indicate that the flip-chip bonded LED samples show accelerated chip failure compared to the conventionally bonded samples. The chip-related failure induces greater heat accumulation, which correlates with the increase in heating power observed in the package. However, the temperature rise and thermal resistance for the flip-chip bonded LEDs do not increase substantially as compared to the conventionally bonded LEDs. This is because the junction temperature can be reduced with a flip-chip die-bonding configuration where the heat generated in the LED chip is dissipated effectively onto the AlN substrate, thereby reducing the increase in temperature rise and thermal resistance. The experimental results are supported by evaluation of the derivative structure functions. In addition, as the thermal resistance of the LED package varies with different humidity levels, there is a need to specify the conditions of humidity in data sheets as LED manufacturers routinely specify a universal thermal resistance value under a fixed operating condition

A practical degradation based method to predict long-term moisture incursion and colour change in high power LEDs

The effect of relative humidity on LEDs and how the moisture incursion is associated to the color shift is studied. This paper proposes a different approach to describe the lumen degradation of LEDs due to the long-term effects of humidity. Using the lumen degradation data of different types of LEDs under varying conditions of relative humidity, a humidity based degradation model (HBDM) is developed. A practical estimation method from the degradation behaviour is proposed to quantitatively gauge the effect of moisture incursion by means of a humidity index. This index demonstrates a high correlation with the color shift indicated by the LED's yellow to blue output intensity ratio. Physical analyses of the LEDs provide a qualitative validation of the model, which provides good accuracy with longer periods of moisture exposure. The results demonstrate that the HBDM is an effective indicator to predict the extent of the long-term impact of humidity and associated relative color shift

Sensor Fabrication Method for in Situ Temperature and Humidity Monitoring of Light Emitting Diodes

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06 ± 0.005 (Ω/°C) and 0.033 pF/%RH, respectively

In Situ Measurement of the Junction Temperature of Light Emitting Diodes Using a Flexible Micro Temperature Sensor

This investigation aimed to fabricate a flexible micro resistive temperature sensor to measure the junction temperature of a light emitting diode (LED). The junction temperature is typically measured using a thermal resistance measurement approach. This approach is limited in that no standard regulates the timing of data capture. This work presents a micro temperature sensor that can measure temperature stably and continuously, and has the advantages of being lightweight and able to monitor junction temperatures in real time. Micro-electro-mechanical-systems (MEMS) technologies are employed to minimize the size of a temperature sensor that is constructed on a stainless steel foil substrate (SS-304 with 30 μm thickness). A flexible micro resistive temperature sensor can be fixed between the LED chip and the frame. The junction temperature of the LED can be measured from the linear relationship between the temperature and the resistance. The sensitivity of the micro temperature sensor is 0.059 ± 0.004 Ω/°C. The temperature of the commercial CREE® EZ1000 chip is 119.97 °C when it is thermally stable, as measured using the micro temperature sensor; however, it was 126.9 °C, when measured by thermal resistance measurement. The micro temperature sensor can be used to replace thermal resistance measurement and performs reliably

Thermal management and humidity based prognostics of high-power LED packages

While Light Emitting Diodes (LEDs) hold much potential as the future of lighting, the high junction temperatures generated during usage result in higher than expected degradation rates and premature failures ahead of the expected lifetime. This problem is especially under-addressed under conditions of high humidity, where there has been limited studies and standards to manage humidity based usage. This research provides an analysis of the factors that contribute to high junction temperatures and suggests prognostic techniques to aid in LED thermal management, specifically under humidity stress. First, this research investigates the effects of current, temperature and humidity on the electrical-optical-thermal (EOT) properties. Temperature rises within an LED because of input stressors which cause heat to build up: the input current, the operating and ambient temperature, and the relative humidity of the environment. Not only is there an accumulation of heat due to these factors that alter the thermal properties, but the electrical and optical characteristics are changed as well. By uncovering specific configurations causing the EOT performance to degrade under stress, better thermal management techniques can be employed. Second, this research proceeds to quantitatively link the EOT performance degradation to the humidity causal factor. The recent proliferation of LED usage in regions with high humidity has not corresponded with sufficient studies and standards governing LED test and usage under the humidity stressor. This has led to indeterminate use and consequentially, a lack of understanding of humidity based failures. A novel humidity based degradation model (HBDM) is successfully developed to gauge the impact of the humidity stressor by means of an index which is shown to be an effective predictor of colour degradation. This prognostication of the colour shift by the HBDM provides both academia and industry not only with an indicator of the physical degradation but also an assessment of the LED yellow-blue colour rendering stability, a critical application criterion. Using the HBDM parameters as indicators of the state of the LED, the degradation study is expanded in the development of a Distance Measure approach to isolate degraded samples exceeding a specified multivariate boundary. The HBDM and Distance Measure approach serve as powerful prognostic techniques in overall LED thermal management

Diode laser modules based on laser-machined, multi-layer ceramic substrates with integrated water cooling and micro-optics

This thesis presents a study on the use of low temperature co-fired ceramic (LTCC) material as a new platform for the packaging of multiple broad area single emitter diode lasers. This will address the recent trend in the laser industry of combining multiple laser diodes in a common package to reach the beam brightness and power required for pumping fibre lasers and for direct-diode industrial applications, such as welding, cutting, and etching. Packages based on multiple single emitters offer advantages over those derived from monolithic diode bars such as higher brightness, negligible thermal crosstalk between neighbouring emitters and protection against cascading failed emitters. In addition, insulated sub-mounted laser diodes based on telecommunication standards are preferred to diode bars and stacks because of the degree of assembly automation, and improved lifetime. At present, lasers are packaged on Cu or CuW platforms, whose high thermal conductivities allow an efficient passive cooling. However, as the number of emitters per package increases and improvements in the laser technology enable higher output power, the passive cooling will become insufficient. To overcome this problem, a LTCC platform capable of actively removing the heat generated by the lasers through impingement jet cooling was developed. It was provided with an internal water manifold capable to impinge water at 0.15 lmin-1 flow rate on the back surface of each laser with a variation of less than 2 °C in the temperature between the diodes. The thermal impedance of 2.7°C/W obtained allows the LTCC structure to cool the latest commercial broad area single emitter diode lasers which deliver up to 13 W of optical power. Commonly, the emitters are placed in a “staircase” formation to stack the emitters in the fast-axis, maintaining the brightness of the diode lasers. However, due to technical difficulties of machining the LTCC structure with a staircase-shaped face, a novel out-plane beam shaping method was proposed to obtain an elegant and compact free space combination of the laser beam on board using inexpensive optics. A compact arrangement was obtained using aligned folding mirrors, which stacked the beams on top of each other in the fast direction with the minimum dead space

Prognostics and health management of light emitting diodes

Prognostics is an engineering process of diagnosing, predicting the remaining useful life and estimating the reliability of systems and products. Prognostics and Health Management (PHM) has emerged in the last decade as one of the most efficient approaches in failure prevention, reliability estimation and remaining useful life predictions of various engineering systems and products. Light Emitting Diodes (LEDs) are optoelectronic micro-devices that are now replacing traditional incandescent and fluorescent lighting, as they have many advantages including higher reliability, greater energy efficiency, long life time and faster switching speed. Even though LEDs have high reliability and long life time, manufacturers and lighting systems designers still need to assess the reliability of LED lighting systems and the failures in the LED. This research provides both experimental and theoretical results that demonstrate the use of prognostics and health monitoring techniques for high power LEDs subjected to harsh operating conditions. Data driven, model driven and fusion prognostics approaches are developed to monitor and identify LED failures, based on the requirement for the light output power. The approaches adopted in this work are validated and can be used to assess the life of an LED lighting system after their deployment based on the power of the light output emitted. The data driven techniques are only based on monitoring selected operational and performance indicators using sensors whereas the model driven technique is based on sensor data as well as on a developed empirical model. Fusion approach is also developed using the data driven and the model driven approaches to the LED. Real-time implementation of developed approaches are also investigated and discussed

Identifying and evaluating aging signatures in light emitting diode lighting systems

Dans ce travail, les dégradations des diodes électroluminescentes (DEL) ont été étudiées en identifiant et en évaluant leurs signatures électriques et photométriques en vieillissement accéléré sous stress thermique et électrique. Un prototype de banc de test expérimental a été développé et construit spécifiquement pour cette étude ce qui nous a permis de tester 128 échantillons en appliquant différentes conditions de stress thermiques et électriques. Quatre types différents de DEL ont été étudié avec des caractéristiques techniques similaires (température de couleur, courant nominal, mono-puce,...) mais avec des technologies différentes couvrant les principaux acteurs du marché (Cree, Osram, Philips et Seoul Semiconductor). Les échantillons ont d'abord été caractérisés à leur état initial, puis soumis à des conditions de stress électrique (à 350mA ou 1050mA) et thermique (fixé à 50°C). Les mécanismes de défaillance ont été analysés en étudiant l'évolution des signatures électriques et photométriques. Ces caractérisations ont permis d'évaluer et de déterminer l'origine des dégradations à différents niveaux : puce semi-conductrice, interconnexions, phosphore ou encapsulation du dispositif. Les caractérisations électriques nous ont permis d'identifier les mécanismes de dégradation de la puce semi-conductrice et de déterminer la nature des dégradations au niveau du contact ohmique du dispositif (sous fort courant injecté). Les caractérisations photométriques complètent cette étude en évaluant les dégradations associées à l'optique (encapsulation et packaging).In this work, the degradation of light emitting diodes (LEDs) is studied by identifying and evaluating their aging signature during the stress time. The custom-made experimental test bench is built for realization of the test measurement. Through this experimental test bench, it allows to test a large amount of LED samples and enable to select different temperature condition and different current stress level. There are four different types of LED with similar characteristic in term of their color temperature, IF, VF, power (1W) and as monochip, but different technology coming from Cree, Osram, Philips and Seoul Semiconductor. The devices are firstly characterized their electrical and photometrical characteristic at their initial state, then they are submitted to different current stress condition at low current stress (350mA) and high current stress (1000mA) while the thermal stress is fixed at one temperature (50°C). The study of these devices failure mechanism is archived by using the primary method based on the electrical and photometrical characterization of the devices that allows to evaluate their degradation at different locations of the device components such as semiconductor chip, interconnection and device's package. The electrical characteristic of the device's I-V curve: at low injected current level and reverse bias allow us to identify the degradation characteristic of device's semiconductor chip, at high injected current level allows us to determine the degradation of device's ohmic contact and photometric characteristic allows us to evaluate the degradation of device's package system