Importance sampling for thermally induced switching and non-switching probabilities in spin-torque magnetic nanodevices

Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however, thermal fluctuations cause small but important errors in both the writing and reading processes. Computing these very small probabilities for magnetic nanodevices using naive Monte Carlo simulations is essentially impossible due to their slow statistical convergence, but variance reduction techniques can offer an effective way to improve their efficiency. Here, we provide an illustration of how importance sampling can be efficiently used to estimate low read and write soft error rates of macrospin and coupled-spin systems.Comment: 11 pages, 14 figure

MRAM Technology Status

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness

Спинтроника и ее вклад в элементную базу информатики. Ч.1

В статье описаны магниторезистивные считывающие головки, магниторезистивная память, такие основные понятия спинтроники, как спин-поляризованный электрический ток, спин-ток, а также явление спин-транспортного перемагничивания.У статті описані такі важливі внески спінтроніки в елементну базу інформатики, як магніторезистивні зчитувальні голівки й енергонезалежна магніторезистивна оперативна пам'ять, такі основні поняття спінтроніки, як спін-поляризований електричний струм, спін-струм, а також явище спін-транспортного перемагнічування.The paper describes such important contributions of spintronics to element base of computer science as magnetoresistive read heads and non-volatile magnetoresistive random-access memory, such basic concepts of spintronics as spin-polarized electric current, spin current and spin-transport phenomenon of reversal magnetization

Memories and memory circuits

Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential