1,174 research outputs found

    Trends and Challenges in CMOS Design for Emerging 60 GHz WPAN Applications

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    International audienceThe extensive growth of wireless communications industry is creating a big market opportunity. Wireless operators are currently searching for new solutions which would be implemented into the existing wireless communication networks to provide the broader bandwidth, the better quality and new value-added services. In the last decade, most commercial efforts were focused on the 1-10 GHz spectrum for voice and data applications for mobile phones and portable computers (Niknejad & Hashemi, 2008). Nowadays, the interest is growing in applications that use high rate wireless communications. Multigigabit- per-second communication requires a very large bandwidth. The Ultra-Wide Band (UWB) technology was basically used for this issue. However, this technology has some shortcomings including problems with interference and a limited data rate. Furthermore, the 3-5 GHz spectrum is relatively crowded with many interferers appearing in the WiFi bands (Niknejad & Hashemi, 2008). The use of millimeter wave frequency band is considered the most promising technology for broadband wireless. In 2001, the Federal Communications Commission (FCC) released a set of rules governing the use of spectrum between 57 and 66 GHz (Baldwin, 2007). Hence, a large bandwidth coupled with high allowable transmit power equals high possible data rates. Traditionally the implementation of 60 GHz radio technology required expensive technologies based on III-V compound semiconductors such as InP and GaAs (Smulders et al., 2007). The rapid progress of CMOS technology has enabled its application in millimeter wave applications. Currently, the transistors became small enough, consequently fast enough. As a result, the CMOS technology has become one of the most attractive choices in implementing 60 GHz radio due to its low cost and high level of integration (Doan et al., 2005). Despite the advantages of CMOS technology, the design of 60 GHz CMOS transceiver exhibits several challenges and difficulties that the designers must overcome. This chapter aims to explore the potential of the 60 GHz band in the use for emergent generation multi-gigabit wireless applications. The chapter presents a quick overview of the state-of-the-art of 60 GHz radio technology and its potentials to provide for high data rate and short range wireless communications. The chapter is organized as follows. Section 2 presents an overview about 60 GHz band. The advantages are presented to highlight the performance characteristics of this band. The opportunities of the physical layer of the IEEE 802.15.3c standard for emerging WPAN applications are discussed in section 3. The tremendous opportunities available with CMOS technology in the design of 60 GHz radio is discussed in section 4. Section 5 shows an example of 60 GHz radio system link. Some challenges and trade-offs on the design issues of circuits and systems for 60 GHz band are reported in section 6. Finally, section 7 presents the conclusion and some perspectives on future directions

    A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS

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    A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm^2

    Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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    This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance

    Low-Power, High-Speed Transceivers for Network-on-Chip Communication

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    Networks on chips (NoCs) are becoming popular as they provide a solution for the interconnection problems on large integrated circuits (ICs). But even in a NoC, link-power can become unacceptably high and data rates are limited when conventional data transceivers are used. In this paper, we present a low-power, high-speed source-synchronous link transceiver which enables a factor 3.3 reduction in link power together with an 80% increase in data-rate. A low-swing capacitive pre-emphasis transmitter in combination with a double-tail sense-amplifier enable speeds in excess of 9 Gb/s over a 2 mm twisted differential interconnect, while consuming only 130 fJ/transition without the need for an additional supply. Multiple transceivers can be connected back-to-back to create a source-synchronous transceiver-chain with a wave-pipelined clock, operating with 6sigma offset reliability at 5 Gb/s

    Design Exploration of mm-Wave Integrated Transceivers for Short-Range Mobile Communications Towards 5G

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    This paper presents a design exploration, at both system and circuit levels, of integrated transceivers for the upcoming fifth generation (5G) of wireless communications. First, a system level model for 5G communications is carried out to derive transceiver design specifications. Being 5G still in pre-standardization phase, a few currently used standards (ECMA-387, IEEE 802.15.3c, and LTE-A) are taken into account as the reference for the signal format. Following a top-down flow, this work presents the design in 65nm CMOS SOI and bulk technologies of the key blocks of a fully integrated transceiver: low noise amplifier (LNA), power amplifier (PA) and on-chip antenna. Different circuit topologies are presented and compared allowing for different trade-offs between gain, power consumption, noise figure, output power, linearity, integration cost and link performance. The best configuration of antenna and LNA co-design results in a peak gain higher than 27dB, a noise figure below 5dB and a power consumption of 35mW. A linear PA design is presented to face the high Peak to Average Power Ratio (PAPR) of multi-carrier transmissions envisaged for 5G, featuring a 1dB compression point output power (OP1dB) of 8.2dBm. The delivered output power in the linear region can be increased up to 13.2dBm by combining four basic PA blocks through a Wilkinson power combiner/divider circuit. The proposed circuits are shown to enable future 5G connections, operating in a mm-wave spectrum range (spanning 9GHz, from 57GHz to 66GHz), with a data-rate of several Gb/s in a short-range scenario, spanning from few centimeters to tens of meters

    A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

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    In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0 dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi

    Convergence of millimeter-wave and photonic interconnect systems for very-high-throughput digital communication applications

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    In the past, radio-frequency signals were commonly used for low-speed wireless electronic systems, and optical signals were used for multi-gigabit wired communication systems. However, as the emergence of new millimeter-wave technology introduces multi-gigabit transmission over a wireless radio-frequency channel, the borderline between radio-frequency and optical systems becomes blurred. As a result, there come ample opportunities to design and develop next-generation broadband systems to combine the advantages of these two technologies to overcome inherent limitations of various broadband end-to-end interconnect systems in signal generation, recovery, synchronization, and so on. For the transmission distances of a few centimeters to thousands of kilometers, the convergence of radio-frequency electronics and optics to build radio-over-fiber systems ushers in a new era of research for the upcoming very-high-throughput broadband services. Radio-over-fiber systems are believed to be the most promising solution to the backhaul transmission of the millimeter-wave wireless access networks, especially for the license-free, very-high-throughput 60-GHz band. Adopting radio-over-fiber systems in access or in-building networks can greatly extend the 60-GHz signal reach by using ultra-low loss optical fibers. However, such high frequency is difficult to generate in a straightforward way. In this dissertation, the novel techniques of homodyne and heterodyne optical-carrier suppressions for radio-over-fiber systems are investigated and various system architectures are designed to overcome these limitations of 60-GHz wireless access networks, bringing the popularization of multi-gigabit wireless networks to become closer to the reality. In addition to the advantages for the access networks, extremely high spectral efficiency, which is the most important parameter for long-haul networks, can be achieved by radio-over-fiber signal generation. As a result, the transmission performance of spectrally efficient radio-over-fiber signaling, including orthogonal frequency division multiplexing and orthogonal wavelength division multiplexing, is broadly and deeply investigated. On the other hand, radio-over-fiber is also used for the frequency synchronization that can resolve the performance limitation of wireless interconnect systems. A novel wireless interconnects assisted by radio-over-fiber subsystems is proposed in this dissertation. In conclusion, multiple advantageous facets of radio-over-fiber systems can be found in various levels of end-to-end interconnect systems. The rapid development of radio-over-fiber systems will quickly change the conventional appearance of modern communications.PhDCommittee Chair: Gee-Kung Chang; Committee Member: Bernard Kippelen; Committee Member: Shyh-Chiang Shen; Committee Member: Thomas K. Gaylord; Committee Member: Umakishore Ramachandra
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